ESREF'2002, "13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis", du 7 au 11 octobre 2002, Bellaria, Rimini, Italie.
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Titre : ESREF'2002, 13th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, du 7 au 11 octobre 2002, Bellaria, Rimini, Italie.

Cité dans : [CONF016] ESREF, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis et Microelectronics and Reliability, décembre 2005.
Cité dans :[REVUE377] Elsevier Science, Microelectronics Reliability, Volume 42, Issues 9-11, Pages 1249-1822, September - November 2002.
Cité dans :[99DIV081] Dates des congrès sur les Convertisseurs Statiques, avril 2013.
Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.
Cité dans : [DIV003]  Liste des actes de congrès par années, février 2003.
Cité dans : [DATA033] Liste des publications de Thierry LEQUEU et activités de recherche, janvier 2018.

Vers : Liste des articles
Vers : Commentaires
Vers : Liste des auteurs
Vers : Tutorials


Informations

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Lieu : Bellaria - Rimini, Italie
Résumé : 12 avril 2002 (résumé de 3 pages).
Notification : 24 mai 2002
Final_Paper : 21 juin 2002
Date : 7-11 octobre 2002
Lien : ESREF/2002/default.htm - le 11 octobre 2002.
Lien : ESREF/2002/ESREF2002.doc - 28 page, 459 Ko, 2 octobre 2002, draft programme.
Lien : ESREF/2002/ESREF02B.doc - 1 page, 106 Ko, 19 février 2002.
Lien : ESREF/2002/ESREF02.doc - 1 page, 106 Ko, 13 février 2002.
Site : http://www.diee.unica.it/ESREF2002
Site : congress venue website for street indications http://www.eurocongressi.org.


Liste des articles

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  [1] :  [ART182]  S. MOREAU, S. FORSTER, T. LEQUEU, R. JERISIAN, Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2, ESREF'2002, October 7-11 , 2002, Bellaria, Italie, 4 pages.
  [2] :  [ART303]  S. MOREAU, S. FORSTER, T. LEQUEU, R. JERISIAN, Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2, Microelectronics Reliability, Volume 42, Issues 9-10, September - October 2002, pp. 1663-1666.
  [3] :  [ART305]  K. CROES, Error Calculation During Reliability Experiments, Tutorial 4, ESREF'2002, Rimini, Italie, October 7-11, 2002.
  [4] :  [ART323]  Michael Pecht, Diganta Das, Arun Ramakrishnan, The IEEE standards on reliability program and reliability prediction methods for electronic equipment, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1259 - 1266
  [5] :  [ART324]  L. Tielemans, R. Rongen, W. De Ceuninck, How reliable are reliability tests?, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1339 - 1345
  [6] :  [ART325]  R. Petersen, W. De Ceuninck, J. D'Haen, M. D'Olieslager, L. De Schepper,O. Vendier, H. Blanck, D. Pons, Exploring the limits of Arrhenius - based life testing with heterojunction bipolar transistor technology, Microelectronics Reliability, Volume 42, Is
  [7] :  [ART326]  G. Ceschini, M. Mugnaini, A. Masi, A reliability study for a submarine compression application, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1377 - 1380
  [8] :  [ART327]  M. Catelani, R. Nicoletti, A Custom - designed automatic measurement system for acquisition and management of reliability data, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1381 - 1384
  [9] :  [ART328]  V. Lista, P. Garbossa, T. Tomasi, M. Borgarino, F. Fantini, L. Gherardi, A. Righetti,  M. Villa, Degradation Based Long - Term Reliability Assessment for Electronic Components in Submarine Applications, Microelectronics Reliability, Volume 42, Issues 9-
 [10] :  [ART329]  P. Battista, M. Catelani, G. Fasano, A. Materassi, On the reliability of instruments for environmental monitoring: some practical considerations, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1393 - 1396
 [11] :  [ART330]  D. M. Fleetwood, Hydrogen - related reliability issues for advanced microelectronics, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1397 - 1403
 [12] :  [ART331]  A. GUEDON, E. WOIRGARD, C. ZARDINI, Evaluation of lead - free soldering for automotive applications, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1555-1558.
 [13] :  [ART332]  N. Seliger, E. Wolfgang, G. Lefranc, H. Berg, T. Licht, Reliable power electronics for automotive applications, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1597 - 1604
 [14] :  [ART333]  A. Castellazzi, R. Kraus, N. Seliger, D. Schmitt - Landsiedel, Reliability analysis of power MOSFET's with the help of compact models and circuit simulation, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1605 - 1610
 [15] :  [ART334]  R. Tiziani, G. Passoni, G. Santospirito, Adhesive die attach for power application: Performance and reliability in plastic package, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1611 - 1616
 [16] :  [ART335]  Sebastiano Russo, Romeo Letor, Orazio Viscuso, Lucia Torrisi, Gianluigi Vitali, Fast thermal fatigue on top metal layer of power devices, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1617 - 1622
 [17] :  [ART336]  Sudha Gopalan, Benno Krabbenborg, Jan - Hein Egbers, Bart van Velzen, Rene Zingg, Reliability of power transistors against application driven temperature swings, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1623 - 1
 [18] :  [ART337]  G. Busatto, B. Cascone, L. Fratelli, M. Balsamo, F. Iannuzzo, F. Velardi, Non - destructive high temperature characterisation of high - voltage IGBTs, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1635 - 1640
 [19] :  [ART338]  G. Lefranc, T. Licht, G. Mitic, Properties of solders and their fatigue in power modules, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1641 - 1646
 [20] :  [ART339]  M. Ciappa, F. Carbognani, P. Cova, W. Fichtner, A Novel Thermomechanics  - Based Lifetime Prediction Model for Cycle Fatigue Failure Mechanisms in Power Semiconductors, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1
 [21] :  [ART340]  R. F. Szeloch, T. P. Gotszalk, P. Janus, Scanning Thermal Microscopy in Microsystem Reliability Analysis, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1719 - 1722
 [22] :  [ART341]  O. Crépel, C. Goupil, B. Domengès, P. Descamps, P. Perdu, A. Doukkali, Magnetic field measurements for Non Destructive Failure Analysis, Microelectronics Reliability, Volume 42, Issues 9-11, September-November 2002, pp. 1763 - 1766


Commentaires

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Concernant le calcul d'erreurs : la thèse de K. CROES et son tutorial N°4 Error calculation During Reliability experiments.
Egalement, de Mickael PECHT : IEEE 1413 et IEEE 1413.1, page 1259-1266, (voir la biblio).
Page 1339, Luc TIELEMANS : How reliable are reliability tests ?

La session Power Devices : Topic 9
Siemens : inverter for automotive (un bilan des pannes intérressant pour le GDR).
Workshop on Reliability in automotive power electronics
Chairmen: E. Wolfgang & M. Ciappa
Les projets HIMRATE / PROCURE (Wondrak) / HOTCAR
6000 heures de fonctionnment pour une voiture.


Liste des auteurs

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Beauchêne,T. Reliability defect monitoring with thermal laser stimulation: biased versus unbiased
Berg, H. Reliable power electronics for automotive applications
Bonnaud, O. Reliability improvement of high value doped polysilicon-based resistors

Chante, J.P. Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse
Ciappa, M. Simulation and experimental validation of scanning capacitance microscopy measurements across low-doped epitaxial PN junction
Collard, D. Process control and failure analysis implementation for THz Schottky-based components
Cova, P. Reliability of polysilicon microstructures: in situ test benches
Croes, K. Statistica aspects of the degradation of LDD nMOSFETs
Croes, K. High-resolution SILC measurements of thin SiO2 at ultra-low voltages

Danto, Y. Accoustic analysis of an assembly : structural identification by signal processing (wavelets)
Danto, Y. Evaluation of a micropackaging analysis technique by high-frequency microwaves
Danto, Y. Contribution to ageing simulation of complex analogue circuit using VHDL-AMS behavioural modelling language
Degraeve, R. High-resolution SILC measurements of thin SiO2 at ultra-low voltages

Fantini, F. Degradation based long-term reliability assessment for electronic components in subamarine applications
Fichtner, W. Device Simulation and Backside Laser Interferometry - Powerful Tools for ESD Protection Development
Fichtner, W. A novel thermomechnaics-based lifetime prediction model for cycle fatique mechanisms in power semiconductors
Forster, S. Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2
Foucher, B. Time stress measurement device on the way to miniaturisation, extension of its application domain
Foucher, B. Experimental and 3D simulation correlation of a gg-nMOS transistor under high current pulse
Fratelli, L. Non-destructive high-temperature characterisation of high-voltage IGBTs

Gossner, H. Device Simulation and Backside Laser Interferometry - Powerful Tools for ESD Protection Development
Gossner, H. Case study of a technology transfer causing ESD problems
Goupil, C. Magnetic field measurements for non destructive failure analysis
Goupil, C. Backside hot spot detection using liquid crystal microscopy
Guédon, A. Evaluation of lead-free soldering for automotive applications
Guilbault, P. Reliability study of the assembly of a large BGA on a build up board using thermo-mechanical simulations

Hofmann, F. Yield evaluation of gold sensor electrodes used for fully electronic DNA detection arrays on CMOS
Jérisian, R. Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2

Labat, N. Degradation mechanisms induced by thermal and bias stresses in InP HEMTs
Lefranc, G. Reliable power electronics for automotive applications
Lefranc, G. Properties of solders and their fatigue in power modules
Lequeu, T. Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2
Litzenberger, M. Device Simulation and Backside Laser Interferometry - Powerful Tools for ESD Protection Development
Litzenberger, M. Electrical field mapping in InGaP HEMTs and GaAs teraherz emitters using backside infrared OBIC technique

Manca, J. High-resolution SILC measurements of thin SiO2 at ultra-low voltages
Masi, A. A reliability study for a submarine compression application
Monsieur, F. Series resistance and oxide thickness spread influence on Weibull breakdown distribution: new experimental correction for reliability projection improvement
Monsieur, F. Gate oxide reliability assessment optimisation
Moreau, S. Influence of the turn-on mechanism on TRIACs' reliability: di/dt thermal fatigue study in Q1 compared to Q2

Pecht, M. The IEEE standards on reliability program and reliability prediction methods for electronic equipment
Pogany, D. Device Simulation and Backside Laser Interferometry - Powerful Tools for ESD Protection Development
Pogany, D. Experimental and simulation analysis of a BCD ESD protection element under the DC and TLP stress conditions
Pogany, D. Electrical field mapping in InGaP HEMTs and GaAs teraherz emitters using backside infrared OBIC technique

Rey-Tauriac, Y. Reliability improvement of high value doped polysilicon-based resistors
Seliger, N. Reliable power electronics for automotive applications
Seliger, N. Reliability analysis of power MOSFETs with the help of compact models and circuit simulation
Stojadinovic, N. Mechanisms of positive gate bias stress induced instabilities in power VDMOSFETs

Tielmans, L. How reliable are reliability tests?
Tiziani, R. Reliability of Au/Al bonding in plastic packages for high temperature (200°C) and high current applications?
Tiziani, R. Adhesive die attach for power application : performance and reliability in plastic package
Touboul, A. Degradation mechanisms induced by thermal and bias stresses in InP HEMTs

Vincent, E. Series resistance and oxide thickness spread influence on Weibull breakdown distribution: new experimental correction for reliability projection improvement
Vincent, E. Gate oxide reliability assessment optimisation
Woirgard, E. Reliability study of the assembly of a large BGA on a build up board using thermo-mechanical simulations
Woirgard, E. Evaluation of lead-free soldering for automotive applications
Wolfgang, E. Reliable power electronics for automotive applications
Zardini, C. Reliability study of the assembly of a large BGA on a build up board using thermo-mechanical simulations


Tutorials

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Chairman : Yves Danto, (University of Bordeaux, Bordeaux, France)

TUT1 - Qualification for Application: a systematic approach
W.H.Gerling (Munich, Germany), F.W.Wulfert (Motorola, Munich, Germany), A.Preussger
(Infineon Tecnologies, Munich, Germany)
Application conditions for semiconductor devices increasingly differ for the various application segments, which develop their own application profiles. Reliability qualification of products is tailored to these specific requirements respectively to individual customer requirements. It applies the Physics-of-Failure concept by evaluating the effects of potential individual failure mechanisms rather than using traditional prefixed stress test plans.
A systematic procedure is established, which converts requirements for a product into measures of development and qualification in combination with a risk and opportunity assessment step, gives early focus on required actions, accompanies the development process and thus integrates qualification into this process. Application examples are discussed.

TUT2 - Reliability derating : A tool for enhancing the reliability of electronic systems
J. Møltoft (Technical University of Denmark, Ørsted-DTU, Denmark)
In the design of electronic systems it is well known that the maximum rated values in the data sheet must not be exceeded under worst case conditions and in many textbooks the technique of keeping the junction temperature below the maximum value named power derating is described. However, such design rules are not good enough to ensure the reliability of electronic systems. Therefore, further derating has been and today still is applied.
During the last 20-30 years reliability derating guidelines have been developed and the basics for these guidelines and their influence on the reliability will be described. A repetition of the basic reliability measures is includes in order to understand fully the concept of reliability derating and related topics.

Chairman: J. Møltoft (Technical University of Denmark, Ørsted-DTU, Denmark)

TUT3 - MEMS Reliability Design
B.Vigna, F.Speroni (ST-Microelectronics, Italy)
Silicon based micro-machining technologies makes available several MEMS structures to realize devices in a wide range of application. Reliability is one of the main concerns in developing these devices. Most of the failure modes of this structures are not in-depth characterized or even not well known. Reliability qualification methodologies are not yet well fixed and standardized. Fault diagnostic is a difficult task for complex MEMS.
This tutorial presents a review of all the various types of MEMS devices and the main expected failure modes, such as: friction phenomena, stiction effects, material fatigue, thermo-mechanical stress related, will be discussed and analyzed versus application / environment stressors and fabrication defects. Special elementary test structures will be presented.
The use of mechanical CAD tools will be shown to simulate the effect of the stress in complex structures and and by a fault tree analysis process to predict the impact and the propagation of the degradation of a single structural element to the whole MEMS.

TUT4 - Error Calculation During Reliability Experiments
K. Croes (XPEOT, Tessenderlo, Belgium)
The idea of this tutorial is that the audience will get a feeling of everything that CAN go wrong during a reliability analysis. The learner will be told what the influence of any potential error can be on the predicted lifetime. Also, the learner will be instructed on how to overcome such errors. Last but not least, the tutorial will propose techniques for calculating the errors and for checking the correctness of the chosen lifetime models.
One crucial conclusion of this tutorial is that it is important to keep the errors on the predicted lifetimes as small as possible. Nevertheless, this is not enough. It is also very important ALWAYS to perform error calculations in order to KNOW THE ERRORS that have been made.


Mise à jour le lundi 25 février 2019 à 15 h 32 - E-mail : thierry.lequeu@gmail.com
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