Elsevier Science, "Microelectronics Reliability", Volume 39, Issues 6-7, Pages 721-1170, June - July 1999.
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Titre : Elsevier Science, Microelectronics Reliability, Volume 39, Issues 6-7, Pages 721-1170, June - July 1999.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.
Cité dans : [DATA196] ESREF'99, Proceedings of the 10th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis.
Auteur : Elsevier Science

Volume : 39
Issues : 6-7
Pages : 721-1170
Date : June - July 1999

[1] : FLIP-chip and "backside" techniques, Pages 721-730
D. L. Barton, K. Bernhard-Höfer and E. I. Cole Jr.
Lien : vide.pdf - | Journal Format-PDF (941 K)

[2] : New tools for yield improvement in integrated circuit manufacturing: can
they be applied to reliability?, Pages 731-739
Chris J. McDonald
Lien : vide.pdf - | Journal Format-PDF (628 K)

[3] : Reliability versus yield and die location in advanced VLSI, Pages 741-749
W. C. Riordan, R. Miller and J. Hicks
Lien : vide.pdf - | Journal Format-PDF (609 K)

[4] : Junction parameters for silicon devices characterization, Pages 751-753
M. de la Bardonnie, N. Toufik, C. Salamé, S. Dib, P. Mialhe, A. Hoffmann
and J. -P. Charles
Lien : vide.pdf - | Journal Format-PDF (189 K)

[5] : Assessment of worst case dielectric failure rate based on statistical
samples with pure intrinsic failure distributions, Pages 755-758
Martin Kerber
Lien : vide.pdf - | Journal Format-PDF (261 K)

[6] : New rapid method for lifetime determination of gate oxide validated with
Bipolar/CMOS/DMOS technology, Pages 759-763
X. Gagnard, M. Taurin and O. Bonnaud
Lien : vide.pdf - | Journal Format-PDF (669 K)

[7] : A universal reliability prediction model for SMD integrated circuits based
on field failures, Pages 765-771
G Kervarrec, ML Monfort, A Riaudel, PY Klimonda, JR Coudrin, D Le Razavet,
JY Boulaire, P Jeanpierre, D Perie, R Meister, S Casassa, JL Haumont and B
Liagre
Lien : vide.pdf - | Journal Format-PDF (549 K)

[8] : Influence of pulsed DC current stress on Electromigration results in AlCu
interconnections; analysis of thermal and healing effects, Pages 773-784
L. Arnaud, G. Reimbold and P. Waltz
Lien : vide.pdf - | Journal Format-PDF (833 K)

[9] : Modelling hot-carrier degradation of LDD NMOSFETs by using a
high-resolution measurement technique, Pages 785-790
R. Dreesen, K. Croes, J. Manca, W. De Ceuninck, L. De Schepper, A. Pergoot
and G. Groeseneken
Lien : vide.pdf - | Journal Format-PDF (374 K)

[10] : Model For The Oxide Thickness Dependence Of SILC Generation Based On Anode
Hole Injection Process, Pages 791-795
C. Jahan, S. Bruyère, G. Ghibaudo, E. Vincent and K. Barla
Lien : vide.pdf - | Journal Format-PDF (231 K)

[11] : Study of Stress Induced Leakage Current by using high resolution
measurements, Pages 797-802
B. De Salvo, G. Ghibaudo, G. Pananakakis, B. Guillaumot and G. Reimbold
Lien : vide.pdf - | Journal Format-PDF (306 K)

[12] : Modelling of the temperature and electric field dependence of
substrate/gate current SILC with an elastic resonant trap assisted
tunnelling mechanism, Pages 803-807
P. Riess, G. Ghibaudo and G. Pananakakis
Lien : vide.pdf - | Journal Format-PDF (252 K)

[13] : Temperature Dependence of Hot Carrier Induced MOSFET Degradation at Low
Gate Bias, Pages 809-814
Sung H. Hong, Sang M. Nam, Byung O. Yun, Byung J. Lee, Chong G. Yu and
Jong T. Park
Lien : vide.pdf - | Journal Format-PDF (294 K)

[14] : Temperature Acceleration of Breakdown and Quasi-Breakdown Phenomena in
Ultra-thin Oxides, Pages 815-820
S. Bruyère, D. Roy, E. Vincent and G. Ghibaudo
Lien : vide.pdf - | Journal Format-PDF (295 K)

[15] : Trapping Mechanisms in Negative Bias Temperature Stressed p-MOSFETs, Pages
821-826
Christian Schlünder, Ralf Brederlow, Peter Wieczorek, Claus Dahl, Jürgen
Holz, Michael Röhner, Sylvia Kessel, Volker Herold, Karl Goser, Werner
Weber and Roland Thewes
Lien : vide.pdf - | Journal Format-PDF (302 K)

[16] : Depassivation of latent plasma damage in pMOS devices, Pages 827-832
L. Pantisano, A. Paccagnella, P. Colombo and M. G. Valentini
Lien : vide.pdf - | Journal Format-PDF (319 K)

[17] : Extended SPICE-like model accounting for layout effects on snapback
phenomenon during ESD events, Pages 833-838
P. Salome, C. Richier, S. Essaifi, C. Leroux, I. Zaza, A. Juge and P.
Mortini
Lien : vide.pdf - | Journal Format-PDF (378 K)

[18] : HBM and TLP ESD robustness in smart-power protection structures, Pages
839-844
S. Santirosi, G. Meneghesso, E. Novarini, C. Contiero and E. Zanoni
Lien : vide.pdf - | Journal Format-PDF (525 K)

[19] : Wafer mapping of ESD performance, Pages 845-850
Joachim C. Reiner, Hans-Ulrich Schröder and Manfred Bender
Lien : vide.pdf - | Journal Format-PDF (278 K)

[20] : Ageing of Laser Crystallized and Unhydrogenated Polysilicon Thin Film
Transistors, Pages 851-855
A. Rahal, T. Mohammed-Brahim, H. Toutah, B. Tala-Ighil, Y. Helen, C. Prat
and F. Raoult
Lien : vide.pdf - | Journal Format-PDF (301 K)

[21] : A Stochastic Approach to Failure Analysis in Electromigration Phenomena,
Pages : 857-862
C. Pennetta, L. Reggiani and Gy. TrefánF. Fantini, I. DeMunari and A.
Scorzoni
Lien : vide.pdf - | Journal Format-PDF (284 K)

[22] : New Latchup Mechanism in Complementary Bipolar Power ICs Triggered by
Backside Die Attach Glue, Pages 863-868
J. A. van der Pol, J-P. F. Huijser and R. B. H. Basten
Lien : vide.pdf - | Journal Format-PDF (510 K)

[23] : Hot-hole-induced interface states build-up on deep-submicrometer LDD
nMOSFETs, Pages 869-874
J. M. Rafí and F. Campabadal
Lien : vide.pdf - | Journal Format-PDF (385 K)

[24] : Transient Induced Latch-Up Triggered by Very Fast Pulses, Pages 875-878
D. Bonfert and H. Gieser
Lien : vide.pdf - | Journal Format-PDF (245 K)

[25] : Extraction and evolution of Fowler-Nordheim tunneling parameters of thin
gate oxides under EEPROM-like dynamic degradation, Pages 879-884
S. Croci, J. M. Voisin, C. Plossu, C. Raynaud, J. L. Autran, P. Boivin and
J. M. Mirabel
Lien : vide.pdf - | Journal Format-PDF (351 K)

[26] : Leakage current variation during two different modes of electrical
stressing in undoped hydrogenated n-channel polysilicon thin film
transistors (TFTs), Pages 885-889
F. V. Farmakis, J. Brini, G. Kamarinos, C. A. Dimitriadis, V. K.
Gueorguiev and Tz. E. Ivanov
Lien : vide.pdf - | Journal Format-PDF (313 K)

[27] : Model-independent determination of the degradation dynamics of thin SiO2
films, Pages 891-895
R. Rodríguez, M. Nafría, E. Miranda, J. Suñé and X. Aymerich
Lien : vide.pdf - | Journal Format-PDF (273 K)

[28] : Reliability improvement of EEPROM by using WSi2 polycide gate, Pages
897-901
K. Ogier-Monnier, Ph. Boivin and O. Bonnaud
Lien : vide.pdf - | Journal Format-PDF (286 K)

[29] : Mercury-probe characterisation of soft breakdown: effect of oxide
thickness and measurement set-up, Pages 903-907
A. Cacciato and S. Evseev
Lien : vide.pdf - | Journal Format-PDF (275 K)

[30] : Advanced failure detection techniques in deep submicron CMOS integrated
circuits, Pages 909-918
Antonio Rubio, Josep Altet and Diego Mateo
Lien : vide.pdf - | Journal Format-PDF (707 K)

[31] : Fault localisation in ICs by goniometric laser probing of thermal induced surface waves, Pages 919-923
S. Dilhaire, J. Altet, S. Jorez, E. Schaub, A. Rubio and W. Claeys
Lien : vide.pdf - | Journal Format-PDF (345 K)

[32] : Laser interferometric method for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress, Pages 925-930
C. Fürböck, M. Litzenberger, D. Pogany, E. Gornik, N. Seliger, T. Müller-Lynch, M. Stecher, H. Goßner and W. Werner
Lien : private/FURBOCK1.pdf - | Journal Format-PDF (470 K)

  [1] : [SHEET491] C. FURBOCK, M. LITZENBERGER, D. POGANY, E. GORNIK, N. SELIGER, T. MULLER-LYNCH, M. STECHER, H. GOBßNER, W. WERNER, Laser interferometric methode for ns-time scale thermal mapping of Smart Power ESD protection devices during ESD stress, Microelectronics

[33] : Validation of radiation hardened designs by pulsed laser testing and SPICE analysis, Pages 931-935
V. Pouget, D. Lewis, H. Lapuyade, R. Briand, P. Fouillat, L. Sarger and M.-C. Calvet
Lien : vide.pdf - | Journal Format-PDF (383 K)

[34] : Front- and backside investigations of thermal and electronic properties of
semiconducting devices, Pages 937-940
G. B. M. Fiege, W. Schade, M. Palaniappan, V. Ng, J. C. H. Phang and L. J. Balk
Lien : vide.pdf - | Journal Format-PDF (535 K)

[35] : A new AFM-based tool for testing dielectric quality and reliability on a
nanometer scale, Pages 941-946
Alexander Olbrich, Bernd Ebersberger, Christian Boit, J. Vancea and H.
Hoffmann
Lien : vide.pdf - | Journal Format-PDF (440 K)

[36] : Sub-surface analyses of defects in integrated devices by scanning probe
acoustic microscopy, Pages 947-950
R. M. Cramer, V. Biletzki, P. Lepidis and L. J. Balk
Lien : vide.pdf - | Journal Format-PDF (377 K)

[37] : Quantitative high frequency-electric force microscope testing of
monolithic microwave integrated circuits at 20 GHz, Pages 951-956
V. Wittpahl, C. Ney, U. Behnke, W. Mertin and E. Kubalek
Lien : vide.pdf - | Journal Format-PDF (420 K)

[38] : Laser Beam Backside Probing of CMOS Integrated Circuits, Pages 957-961
Steven Kasapi, Chun-Cheng Tsao, Ken Wilsher, William Lo and Seema Somani
Lien : vide.pdf - | Journal Format-PDF (460 K)

[39] : Electron Beam Testing of FPGA Circuits, Pages 963-968
R. Desplats, P. Perdu, B. Benteo and A. Grangy
Lien : vide.pdf - | Journal Format-PDF (724 K)

[40] : Voltage contrast measurements on sub-micrometer structures with an
electric force microscope based test system, Pages 969-974
U. Behnke, B. Wand, W. Mertin and E. Kubalek
Lien : vide.pdf - | Journal Format-PDF (452 K)

[41] : A new bifunctional topography and current probe for scanning force
microscope testing of integrated circuits, Pages 975-980
S. Bae, K. Schiemann, W. Mertin, E. Kubalek and M. Maywald
Lien : vide.pdf - | Journal Format-PDF (550 K)

[42] : Optical method for the measurement of the thermomechanical behaviour of electronic devices, Pages 981-985
S. Dilhaire, S. Jorez, A. Cornet, E. Schaub and W. Claeys
Lien : private/DILHAIRE1.pdf - | Journal Format-PDF (405 K)

  [1] :  [PAP406]  S. DILHAIRE, S. JOREZ, A. CORNET, E. SCHAUB, W. CLAEYS, Optical method for the measurement of the thermomechanical behaviour of electronic devices, Microelectronics Reliability, Volume 39, Issues 6-7, June - July 1999, pp. 981-985.

[43] : Cross-section analysis of electric devices by scanning capacitance
microscope, Pages 987-990
Yoichi Takasaki and Takuma Yamamoto
Lien : vide.pdf - | Journal Format-PDF (368 K)

[44] : TIVA and SEI developments for enhanced front and backside interconnection
failure analysis, Pages 991-996
E. I. Cole Jr., P. Tangyunyong, D. A. Benson and D. L. Barton
Lien : vide.pdf - | Journal Format-PDF (736 K)

[45] : Enhancing IC repairs by combining laser direct-writing of Cu and FIB
techniques, Pages 997-1001
J. Remes, H. Moilanen and S. Leppävuori
Lien : vide.pdf - | Journal Format-PDF (564 K)

[46] : FIB Voltage Contrast Measurement for Enhanced Circuit Repairs, Pages
1003-1008
Romain Desplats, Bruno Benteo and Philippe Perdu
Lien : vide.pdf - | Journal Format-PDF (625 K)

[47] : Improved SRAM Failure Diagnosis for Process Monitoring via Current
Signature Analysis, Pages 1009-1014
M. Schienle, Th. Zanon and D. Schmitt-Landsiedel
Lien : vide.pdf - | Journal Format-PDF (411 K)

[48] : Failure Analysis Method by Using Different Wavelengths Lasers and Its
Application, Pages 1015-1020
Seigo Ito and Yashuhiko Tando
Lien : vide.pdf - | Journal Format-PDF (535 K)

[49] : Defect Localization using Voltage Contrast IDDQ Testing, Pages 1021-1026
Philippe Perdu and Romain Desplats
Lien : vide.pdf - | Journal Format-PDF (675 K)

[50] : 2D physical simulation of degradation on transistors induced by FIB
exposure of dielectric passivation, Pages 1027-1031
J. Benbrik, G. Rolland, D. Meunier, B. Benteo, N. Labat, C. Maneux and Y.
Danto
Lien : vide.pdf - | Journal Format-PDF (555 K)

[51] : Physics of degradation in GaAs-based heterojunction bipolar transistors,
Pages : 1033-1042
T. Henderson
Lien : vide.pdf - | Journal Format-PDF (618 K)

[52] : Gold removal in Failure Analysis of GaAs-based laser diodes, Pages
1043-1047
M. Vanzi, A. Bonfiglio, P. Salaris, P. Deplano, E. F. Trogu, A. Serpe, G.
Salmini and R. De Palo
Lien : vide.pdf - | Journal Format-PDF (603 K)

[53] : Evaluation of P-HEMT MMIC technology PH25 for space applications, Pages
1049-1054
P. Huguet, P. Auxemery, G. Pataut and F. Garat
Lien : vide.pdf - | Journal Format-PDF (453 K)

[54] : Degradation of AlGaAs/GaAs Power HFET's Under On-State and Off-State
Breakdown Conditions, Pages 1055-1060
D. Dieci, G. Sozzi, R. Menozzi, C. Lanzieri, A. Cetronio and C. Canali
Lien : vide.pdf - | Journal Format-PDF (376 K)

[55] : Effects of RF life-test on LF electrical parameters of GaAs power MESFETs,
Pages : 1061-1066
N. Saysset-Malbert, B. Lambert, C. Maneux, N. Labat, A. Touboul, Y. Danto,
L. K. J. Vandamme, P. Huguet, P. Auxemery and F. Garat
Lien : vide.pdf - | Journal Format-PDF (347 K)

[56] : A simpler method for life-testing laser diodes, Pages 1067-1071
M. Vanzi, G. Martines, A. Bonfiglio, M. Licheri, R. D'Arco, G. Salmini and
R. De Palo
Lien : vide.pdf - | Journal Format-PDF (456 K)

[57] : Cathodoluminescence from hot electron stressed InP HEMTs, Pages 1073-1078
Paolo Cova, Gaudenzio Meneghesso, Giancarlo Salviati and Enrico Zanoni
Lien : vide.pdf - | Journal Format-PDF (308 K)

[58] : Impact of FEM Simulation on Reliability Improvement of Packaging, Pages
1079-1088
Kirsten Weide
Lien : vide.pdf - | Journal Format-PDF (739 K)

[59] : 1/f Noise in conductive adhesive bonds under mechanical stress as a
sensitive and fast diagnostic tool for reliability assessment, Pages
1089-1094
L. K. J. Vandamme, M. G. Perichaud, E. Noguera, Y. Danto and U. Behner
Lien : vide.pdf - | Journal Format-PDF (322 K)

[60] : Localization of defects in die-attach assembly by Continuous Wavelet
Transform using Scanning Acoustic Microscopy, Pages 1095-1101
L. Bechou, L. Angrisiani, Y. Ousten, D. Dallet, H. Levi, P. Daponte and Y.
Danto
Lien : vide.pdf - | Journal Format-PDF (519 K)

[61] : Quality and mechanical reliability assessment of wafer-bonded micromechanical components, Pages 1103-1108
M. Petzold, J. Bagdahn and D. Katzer
Lien : private/Petzold.pdf - | Journal Format-PDF (445 K)

  [1] :  [PAP407]  M. Petzold, J. Bagdahn and D. Katzer, Quality and mechanical reliability assessment of wafer-bonded micromechanical components, Volume 39, Issues 6-7, June - July 1999, pp. 1103-1108.

[62] : Contact Resistance Anomalies of Vias before Breakdown in Accelerated Current Life Tests, Pages 1109-1112
W. L. F. Gölz
Lien : vide.pdf - | Journal Format-PDF (262 K)

[63] : Physical Limits and Lifetime Limitations of Semiconductor Devices at High Temperatures, Pages 1113-1120
W. Wondrak
Lien : vide.pdf - | Journal Format-PDF (501 K)

[64] : Device reliability and robust power converter development, Pages 1121-1130
N. Keskar, M. Trivedi and K. Shenai
Lien : private/KESKAR.pdf - | Journal Format-PDF (687 K)

  [1] :  [PAP408]  N. Keskar, M. Trivedi and K. Shenai, Device reliability and robust power converter development, Volume 39, Issues 6-7, June - July 1999, pp. 1121-1130.

[65] : Lifetime Extrapolation for IGBT Modules under Realistic Operation Conditions, Pages 1131-1136
M. Ciappa, P. Malberti, W. Fichtner, P. Cova, L. Cattani and F. Fantini
Lien : private/CIAPPA.pdf - | Journal Format-PDF (314 K)

  [1] :  [PAP409]  M. CIAPPA, P. MALBERTI, W. FICHTNER, P. COVA, L. CATTANI, F. FANTINI, Lifetime Extrapolation for IGBT Modules under Realistic Operation Conditions, Volume 39, Issues 6-7, June - July 1999, pp. 1131-1136.

[66] : Long term Reliability Testing of HV-IGBT modules in worst case traction operation, Pages 1137-1142
L. Fratelli, B. Cascone, G. Giannini and G. Busatto
Lien : private/FRATELLI.pdf - | Journal Format-PDF (547 K)

  [1] :  [PAP410]  L. Fratelli, B. Cascone, G. Giannini and G. Busatto, Long term Reliability Testing of HV-IGBT modules in worst case traction operation, Volume 39, Issues 6-7, June - July 1999, pp. 1137-1142.

[67] : Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices, Pages 1143-1148
D. Pogany, N. Seliger, M. Litzenberger, H. Gossner, M. Stecher, T. Müller-Lynch, W. Werner and E. Gornik
Lien : private/FURBOCK2.pdf - | Journal Format-PDF (382 K)

  [1] : [SHEET492] D. POGANY, N. SELIGER, M. LITZENBERGER, H. GOSSNER, M. STECHER, T. MULLER-LYNCH, W. WERNER, E. GORNIK, Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices, Microelectronics Reliability, no. 39, pp. 1143-1148, 1999.

[68] : Thermal Characterization of Power Devices by Scanning Thermal Microscopy Techniques, Pages 1149-1152
G. B. M. Fiege, F. -J. Niedernostheide, H. -J. Schulze, R. Barthelmeß and L. J. Balk
Lien : private/FIEGE.pdf - | Journal Format-PDF (509 K)

  [1] :  [PAP411]  G. B. M. Fiege, F. -J. Niedernostheide, H. -J. Schulze, R. Barthelmeß and L. J. Balk, Thermal Characterization of Power Devices by Scanning Thermal Microscopy Techniques, Volume 39, Issues 6-7, June - July 1999, pp. 1149-1152.

[69] : Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules, Pages 1153-1158
A. Hamidi, N. Beck, K. Thomas and E. Herr
Lien : private/HAMIDI2.pdf - | Journal Format-PDF (642 K)

  [1] : [SHEET361] A. HAMIDI, N. BECK, K. THOMAS, E. HERR, Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules, ESREF'99.

[70] : Reliability of AIN substrates and their solder joints in IGBT power modules, Pages 1159-1164
G. Mitic, R. Beinert, P. Klofac, H. J. Schultz and G. Lefranc
Lien : private/MITIC.pdf - | Journal Format-PDF (515 K)

  [1] :  [PAP412]  G. MITIC, R. BEINERT, P. KLOFAC, H. J. SCHULTZ, G. LEFRANC, Reliability of AIN substrates and their solder joints in IGBT power modules, Volume 39, Issues 6-7, June - July 1999, pp. 1159-1164.

[71] : Power cycling on press-pack IGBTs: measurements and thermomechanical simulation, Pages 1165-1170
Paolo Cova, Gianni Nicoletto, Alessandro Pirondi, Marco Portesine and Maurizio Pasqualetti
Lien : private/COVA2.pdf - | Journal Format-PDF (425 K)

  [1] :  [PAP413]  P. COVA, G. NICOLETTO, A. PIRONDI, M. PORTESINE, M. PASQUALETTI, Power cycling on press-pack IGBTs: measurements and thermomechanical simulation, Microelectronics Reliability, Volume 39, Issues 6-7, June - July 1999, pp. 1165-1170.

[72] : Editorial, Pages ix-x
Journal Format-PDF (105 K)

[73] : Index, Pages I-II
Journal Format-PDF (77 K)


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