Fiche : [DATA196]
Titre : ESREF'99, Proceedings of the 10th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis.
Cité dans : [CONF016] ESREF, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis et Microelectronics and Reliability, décembre 2005. Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004. Cité dans :[REVUE172] Elsevier Science, Microelectronics Reliability, Volume 39, Issues 6-7, Pages 721-1170, June - July 1999.Editeurs : N. Labat & A. Touboul, Laboratoire IXL, Université de Bordeaux I, 351 Cours de la Liberation, F-33405 Talence Cedex, France.
Vers : Liste des articles
This book contains the papers presented at ESREF 99, the 10th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, held in Arcachon, near Bordeaux (France) from 5-8 October 1999. The papers are being published concurrently as a special issue of the journal Microelectronics Reliability.
The ESREF symposium provides designers, founders and users with an international forum for presenting recent developments and future trends in the quality and reliability of materials, devices and circuits for microelectronics. The symposium addresses all aspects of specification, technology and manufacturing, test, control and analysis. 19 papers presented as posters accompany the 42 oral papers. The accepted papers, from Europe, the United States and Asia, cover the following topics: Quality and reliability Modelling of failure mechanisms: ESD, electromigration, oxide and MOS Electron and optical beam testing (EOBT) Advanced failure analysis techniques Reliability of compound semiconductors Packaging, assemblies and microsystems Power devices.
The Proceedings contains tutorials which allow readers to refresh their knowledge on specific topics, and invited papers that review the basics as well as covering more advanced material. The invited papers introduce each of the topics listed below, and focus on leading work in all areas covered by the symposium. In addition, the Proceedings includes the winners of the Best Paper Awards at the International Reliability Physics Symposium (IRPS 99, USA) and of the Reliability Center Japanese Conference (RCJ 98, Japan).
For designers, founders and users specialising in the reliability of materials, devices and circuits for microelectronics.
Chapter headings and selected papers: Tutorials.
New tools for yield improvement in integrated circuit manufacturing: can they be applied to reliability? (C.J. McDonald).
Topic_A : Quality and Reliability.
International Reliability Physics Symposium 1999 Best Paper.
Reliability versus yield and die location in advanced VLSI (invited paper) (W.C. Riordan et al.).
A universal reliability prediction model for SMD integrated circuits based on field failures (G. Kervarrec et al.).
Topic_B : Modelling of Failure Mechanisms: ESD, Electromigration, Oxide and MOS.
Influence of pulsed DC current stress on electromigration results in AlCu interconnections; analysis of thermal and healing effects (invited paper) (L. Arnaud et al.).
Study of stress induced leakage current by using high resolution measurements (B. de Salvo et al.).
Temperature acceleration of breakdown and quasi-breakdown phenomena in ultra-thin oxides (S. Bruyère et al.).
A stochastic approach to failure analysis in electromigration phenomena (C. Pennetta et al.).
Leakage current variation during two different modes of electrical stressing in undoped hydrogenated n-channel polysilicon thin film transistors (TFTs) (F.V. Farmakis et al.).
Topic_C : Electron and Optical Beam Testing.
Advanced failure detection techniques in deep submicron CMOS integrated circuits (invited paper) (A. Rubio et al.).
Front- and backside investigation of thermal and electronic properties of semiconducting devices (G.B.M. Fiege et al.).
Quantitative high frequency-electric force microscope testing of monolithic microwave integrated circuits at 20 GHz (V. Wittpahl et al.).
Topic_D : Advanced Failure Analysis Techniques.
Cross-section analysis of electric devices by scanning capacitance microscope (Y. Takasaki, T. Yamamoto).
TIVA and SEI developments for enhanced front and backside interconnection failure analysis (E.I. Cole Jr.
Improved SRAM failure diagnosis for process monitoring by current signature analysis (M. Schienle et al.).
Topic_E : Reliability of Compound Semiconductors.
Physics of degradation in GaAs-based heterojunction bipolar transistors (invited paper) (T. Henderson).
A simpler method for life-testing laser diodes (M. Vanzi et al.).
Topic_F : Packaging, Assemblies and Microsystems.
Impact of FEM simulation on reliability improvement of packaging (invited paper) (K. Weide).
Quality and mechanical reliability assessment of wafer-bonded micromechanical components (M. Petzold et al.).
Topic_G : Power Devices.
Physical limits and lifetime limitations of semiconductor devices at high temperatures (invited paper) (W. Wondrak).
Device reliability and robust power converter development (invited paper) (N. Keskar et al.).
Thermal characterisation of power devices by scanning thermal microscopy techniques (G.B.M. Fiege et al.).
ISBN : 0-08-043419-3
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Liste des articles
 : [PAP406] S. DILHAIRE, S. JOREZ, A. CORNET, E. SCHAUB, W. CLAEYS, Optical method for the measurement of the thermomechanical behaviour of electronic devices, Microelectronics Reliability, Volume 39, Issues 6-7, June - July 1999, pp. 981-985.  : [PAP407] M. Petzold, J. Bagdahn and D. Katzer, Quality and mechanical reliability assessment of wafer-bonded micromechanical components, Volume 39, Issues 6-7, June - July 1999, pp. 1103-1108.  : [PAP408] N. Keskar, M. Trivedi and K. Shenai, Device reliability and robust power converter development, Volume 39, Issues 6-7, June - July 1999, pp. 1121-1130.  : [PAP409] M. CIAPPA, P. MALBERTI, W. FICHTNER, P. COVA, L. CATTANI, F. FANTINI, Lifetime Extrapolation for IGBT Modules under Realistic Operation Conditions, Volume 39, Issues 6-7, June - July 1999, pp. 1131-1136.  : [PAP410] L. Fratelli, B. Cascone, G. Giannini and G. Busatto, Long term Reliability Testing of HV-IGBT modules in worst case traction operation, Volume 39, Issues 6-7, June - July 1999, pp. 1137-1142.  : [SHEET492] D. POGANY, N. SELIGER, M. LITZENBERGER, H. GOSSNER, M. STECHER, T. MULLER-LYNCH, W. WERNER, E. GORNIK, Damage analysis in smart-power technology electrostatic discharge (ESD) protection devices, Microelectronics Reliability, no. 39, pp. 1143-1148, 1999.  : [PAP411] G. B. M. Fiege, F. -J. Niedernostheide, H. -J. Schulze, R. Barthelmeß and L. J. Balk, Thermal Characterization of Power Devices by Scanning Thermal Microscopy Techniques, Volume 39, Issues 6-7, June - July 1999, pp. 1149-1152.  : [SHEET361] A. HAMIDI, N. BECK, K. THOMAS, E. HERR, Reliability and lifetime evaluation of different wire bonding technologies for high power IGBT modules, ESREF'99.  : [PAP412] G. MITIC, R. BEINERT, P. KLOFAC, H. J. SCHULTZ, G. LEFRANC, Reliability of AIN substrates and their solder joints in IGBT power modules, Volume 39, Issues 6-7, June - July 1999, pp. 1159-1164.  : [PAP413] P. COVA, G. NICOLETTO, A. PIRONDI, M. PORTESINE, M. PASQUALETTI, Power cycling on press-pack IGBTs: measurements and thermomechanical simulation, Microelectronics Reliability, Volume 39, Issues 6-7, June - July 1999, pp. 1165-1170.
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