Elsevier Science, "Microelectronics Reliability", Vol. 40, Issue 12, pp. 1981-2152, December 2000.
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Revue : [REVUE171]

Titre : Elsevier Science, Microelectronics Reliability, Vol. 40, Issue 12, pp. 1981-2152, December 2000.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 40
Issue : 12
Pages : 1981 - 2152
Date : December 2000

1 : Plasma-charging damage in ultra-thin gate oxide, Pages 1981-1986
Kin P. Cheung
SummaryPlus | Article | Journal Format-PDF (294 K)

2 : Time-dependent dielectric wearout technique with temperature effect for reliability test of ultrathin (<2.0 nm) single layer and dual layer gate oxides, Pages 1987-1995
Yider Wu, Qi Xiang, Jean Y. M. Yang, Gerald Lucovsky and Ming-Ren Lin
SummaryPlus | Article | Journal Format-PDF (444 K)

3 : IC's radiation effects modeling and estimation, Pages 1997-2018
V. V. Belyakov, A. I. Chumakov, A. Y. Nikiforov, V. S. Pershenkov, P. K.
Skorobogatov and A. V. Sogoyan
Abstract | Journal Format-PDF (357 K)

4 : A new hole mobility model for hydrodynamic simulation, Pages 2019-2022
Chanho Lee, Jung-Sik Kim, Hyungsoon Shin, Young-June Park and Hong-Shick
Min
SummaryPlus | Article | Journal Format-PDF (106 K)

5 : The influence of adatom diffusion on coverage and emission current fluctuations, Pages 2023-2031
A. A. Tarasenko, F. Nieto, L. Jastrabík and C. Uebing
Abstract | Journal Format-PDF (191 K)

6 : Bulk oxide charge and slow states in Si/SiO2 structures generated by RIE-mode plasma, Pages 2033-2037
A. Paskaleva and E. Atanassova
SummaryPlus | Article | Journal Format-PDF (94 K)

7 : Plasma charging damage during contact hole etch in high-density plasma etcher, Pages 2039-2046
Bing-Yue Tsui, Shyue-Shyh Lin, Chia-Shone Tsai and Chin C. Hsia
SummaryPlus | Article | Journal Format-PDF (476 K)

8 : On the optimum thickness to test dielectric reliability, in an integrated technology of power devices, Pages 2047-2051
Slimane Oussalah, Fabien Nebel and Robert Jérisian
Lien : oussalah.pdf - Journal Format-PDF (133 K)

9 : A grain structure based statistical simulation of electromigration damage in chip level interconnect lines, Pages 2053-2060
T. M. Korhonen, D. D. Brown and M. A. Korhonen
SummaryPlus | Article | Journal Format-PDF (232 K)

10 : Rise-time effects in grounded gate nMOS transistors under transmission line pulse stress, Pages 2061-2067
Gianluca Boselli, Ton Mouthaan and Fred Kuper
SummaryPlus | Article | Journal Format-PDF (225 K)

11 : High resolution thermal simulation of electronic components, Pages 2069-2076
G. Hanreich, J. Nicolics and L. Musiejovsky
Lien : hanreich.pdf - Journal Format-PDF (338 K)

12 : The effect of polyimide surface chemistry and morphology on critical stress intensity factor, Pages 2077-2086
Masazumi Amagai
SummaryPlus | Article | Journal Format-PDF (489 K)

13 : Estimation of the reliability of digital systems implemented on programmable devices, Pages 2087-2093
Igor V. Vasiltsov and Bogdan A. Mandziy
SummaryPlus | Article | Journal Format-PDF (370 K)

14 : Concurrent testing in high level synthesis, Pages 2095-2106
A. A. Ismaeel, R. Bhatnagar and R. Mathew
Abstract | Journal Format-PDF (375 K)

15 : Back gate bias method of threshold voltage control for the design of low voltage CMOS ternary logic circuits, Pages 2107-2110
A. Srivastava
SummaryPlus | Article | Journal Format-PDF (89 K)

16 : Total dose response studies of n-channel SOI MOSFETs for low power CMOS circuits, Pages 2111-2115
A. Srivastava
SummaryPlus | Article | Journal Format-PDF (155 K)

17 : The Burr type XII distribution as a failure model under various loss functions, Pages 2117-2122
Deborah Moore and Alex S. Papadopoulos
Abstract | Journal Format-PDF (82 K)

18 : The peaks in the electric derivative curves and optic derivative curves of GaAs/GaAlAs high-power QW lasers, Pages 2123-2128
Qi Liyun, Shi Jiawei, Li Hongyan, Jin Enshun and Gao Dingsan
SummaryPlus | Article | Journal Format-PDF (107 K)

19 : High-performance System Design: Circuits and Logic; Vojin Oklobdzija
(Ed.), IEEE Press Series on Microelectronic Systems, New York, 1999.
Hardcover, 537 pp., IEEE Order No. PC 5765, ISBN: 0-7803-4716-1, $110, Page 2129
M. Stojcev
SummaryPlus | Article | Journal Format-PDF (44 K)

20 : Index, Pages 2147-2152
Unknown Journal Format-PDF (51 K)


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