S. FORSTER, T. LEQUEU, R. JERISIAN, "Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects", Microelectronics Reliability, Volume 41, Issues 9-10, September - October 2001, pp. 1677-1682.
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Article : [ART163]

Titre : S. FORSTER, T. LEQUEU, R. JERISIAN, Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects, Microelectronics Reliability, Volume 41, Issues 9-10, September - October 2001, pp. 1677-1682.

Cité dans : [PAP370]  S. FORSTER, T. LEQUEU, R. JERISIAN, Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects, ESREF'2001, pp. 1677-1682.
Cité dans :[REVUE279] Elsevier Science, Microelectronics Reliability, Volume 41, Issues 9-10, Pages 1273-1736, September - October 2001.
Cité dans : [DATA033] Liste des publications de Thierry LEQUEU et activités de recherche, janvier 2018.
Cité dans :[ART162]
Auteur : Stéphane Forster (1)(2)
Auteur : Thierry Lequeu (1)
Auteur : Robert Jérisian (1)

Adresse : (1) LMP-STMicroelectronics, (2) CLOES - France
Source : Microelectronics Reliability
Volume : 41
Issues : 9-10
Date : September - October 2001
Site : http://www.elsevier.com/locate/microrel
Page : 1677 - 1682
Lien : private/FORSTER3.pdf - 6 pages, 493 Ko.
Lien : ART162.HTM#Bibliographie - référence [2].

Abstract :
The authors explain the degradation mechanism of a TRIAC submitted to the application of strong di/dt during
the commutation at turn-on. The analysis is based on the evaluation of the thermo-mechanical forces concerned
in the Initially Turned on Area of the TRIAC in quadrant Q2. A mathematical expression is established giving
the number of commutations cycles before failure that the component can withstand. This expression is made
profitable to evaluate the reliability of the TRIAC.


Bibliographie

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Références : 8
[1] : S. FORSTER, T. LEQUEU, R. JERISIAN, A. HOFFMANN, "3-D analysis of the breakdown localized defects of ACS(TM) through a TRIAC study", Microelectronics Reliability, Vol. 40, pp. 1695-1700, 2000.
[2] : I.L. SOMOS, L.O. ERIKSSON, W.H. TOBIN, "Understanding di/dt ratings and life expectancy for thyristors", Power Conversion And Intelligent Motion, pp. 56-59, February 1986.
[3] : R.G. RODRIGUES, D.E. PICCONE, W.H. TOBIN, L.W. WILLINGER, J.A. BARROW, T.A. HANSEN, J. ZHAO, L. CAO, "Operation Of Power Semiconductors At Their Thermal Limit", 1998 IEEE IAS Annual Meeting.
[4] : D. BROEK, "Elementary Engineering Fracture Mechanics", 1982, Martinus Nijhoff Publishers.
[5] : J.P. SINGH, K. NIIHARA, D.P.H. HASSELMAN, "Analysis of thermal fatigue behaviour of brittle structural materials", Journal of materials science, vol.16, pp.2789-2797, 1981.
[6] : R.B. ABERNETHY, "The New Weibull Handbook", Gulf Publishing Company, 1994.
[7] : W. KUO, W.-T. K. CHIEN, T. KIM, "Reliability, yield, and stress burn in : a unified approach for microelectronics systems manufacturing and software development", Kluwer Academic Publishers, 1998.
[8] : W. NELSON, "Applied Life Data Analysis", Wiley, 1982.
  [1] : [SHEET459] S. FORSTER, T. LEQUEU, R. JERISIAN, A. HOFFMANN, 3-D analysis of the breakdown localized defects of ACSTM through a triac study, Microelectronics Reliability, October 2000, Vol. 40, pp. 1695-1700.
  [2] : [SHEET204] I.L. SOMOS, L.O. ERIKSSON, W.H. TOBIN, Understanding di/dt ratings and life expectancy for thyristors, Power Conversion And Intelligent Motion, pp. 56-59, February 1986.
  [3] : [SHEET196] R.G. RODRIGUES, D.E. PICCONE, W.H. TOBIN, L.W. WILLINGER, J.A. BARROW, T.A. HANSEN, J. ZHAO, L. CAO, Operation Of Power Semiconductors At Their Thermal Limit, 1998 IEEE IASociety Annual Meeting, October 12-15, 1998, 12 pages.
  [4] : [LIVRE200] D. BROEK, Elementary Engineering Fracture Mechanics, June 1982, Martinus Nijhoff Publishers, 524 pages.
  [5] : [SHEET514] J.P. SINGH, K. NIIHARA, D.P.H. HASSELMAN, Analysis of thermal fatigue behaviour of brittle structural materials, Journal of materials  science, vol.16, pp.2789-2797, 1981.
  [6] : [LIVRE234] R.B. ABERNETHY, The New Weibull Handbook, 1996, 536 Oyster Road, North Palm Beach, FL 33408-4328.
  [7] : [LIVRE063] W. KUO, W.-T. K. CHIEN, T. KIM, Reliability, yield, and stress burn in: a unified approach for microelectronics systems manufacturing and software development, Kluwer Academic Publishers, january 1998.
  [8] : [LIVRE233] W. NELSON, Applied Life Data Analysis, Wiley, April 1982, 656 pages.


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