R.G. RODRIGUES, D.E. PICCONE, W.H. TOBIN, L.W. WILLINGER, J.A. BARROW, T.A. HANSEN, J. ZHAO, L. CAO, "Operation Of Power Semiconductors At Their Thermal Limit", 1998 IEEE IASociety Annual Meeting, October 12-15, 1998, 12 pages.
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Titre : R.G. RODRIGUES, D.E. PICCONE, W.H. TOBIN, L.W. WILLINGER, J.A. BARROW, T.A. HANSEN, J. ZHAO, L. CAO, Operation Of Power Semiconductors At Their Thermal Limit, 1998 IEEE IASociety Annual Meeting, October 12-15, 1998, 12 pages.

Cité dans : [DATA043] Silicon Power, Technical papers, mars 2000.
Cité dans : [DATA042] Recherche sur l'auteur Istvan SOMOS, mars 2000.
Cité dans : [DIV398]  Les revues IEEE Transactions on Industry Applications et IEEE Industry Applications Society - IAS, novembre 2005.
Cité dans :[PAP370]
Auteur : R.G. Rodrigues
Auteur : D.E. Piccone
Auteur : W.H. Tobin
Auteur : L.W. Willinger
Auteur : J.A. Barrow
Auteur : T.A. Hansen, Silicon Power Corporation, 175 Great Valley Parkway Malvern, PA 19355-1321, U.S.A.
Auteur : J. Zhao
Auteur : L. Cao, Rutgers University, Dep. of Electrical and Computer Eng. Piscataway, NJ 08855-0909, U.S.A.

Source : 1998 IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, USA
Date : October 12-15, 1998
Pages : 1 12
Stockage : Thierry LEQUEU
Lien : private/RODRIGUES1.pdf - 203 Ko, 12 pages.
Lien : private/RODRIGUES1B.pdf - 944 Ko, 12 pages.

Abstract :
Based on experience gained with Si power devices, a review is presented of some of the thermal
limitations to the operation of power semiconductor devices, which are encountered in steady state
operation, but also, much more stringently, under switching and pulse power transients.
Devices based on SiC are expected to be capable of steady-state operation at much higher temperature
than Si devices. Here we discuss predictable failure mechanisms of SiC devices at the extremely high
temperatures reached under surge conditions, and their life expectancy under thermal cycling
operation.


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 [20] : [SHEET213] I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors-a new method for predicting the on-state characteristic and temperature rise during multicycle fault currents, IEEE Transactions on Industry Applications,  Nov.-Dec. 1995, pp. 12
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 [26] : [SHEET230] I.L. SOMOS, D.E. PICCONE, W.H. TOBIN, Plasma spreading loss in 100mm thyristors, PCIM magazine, june 1988.
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