I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, "Power semiconductors empirical diagrams expressing life as a function of temperature excursion", IEEE Transactions on Magnetics, jan. 1993, vol. 29, issue 1, part 2, pp. 517-522.
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Article : [SHEET169]

Titre : I.L. SOMOS, D.E. PICCONE, L.J. WILLINGER, W.H. TOBIN, Power semiconductors empirical diagrams expressing life as a function of temperature excursion, IEEE Transactions on Magnetics, jan. 1993, vol. 29, issue 1, part 2, pp. 517-522.

Cité dans :[SHEET155] S. JANUSZEWSKI, M. KOCISZEWSKA-SZCZERBIK, H. SWIATEK, G. SWIATEK, Semiconductor device failures in power converter service conditions, EPE Journal, Dec. 1998, vol. 7, no. 3-4, pp. 12-17.
Cité dans : [DATA035] Recherche sur les mots clés thermal + fatigue + semiconductor et reliability + thermal + cycle, mars 2004.
Auteur : Istwan L. Somos, Fellow IEEE, Somos Electra, Lansdowne, PA 19050, USA
Auteur : Dante E. Piccone
Auteur : Lawrence J. Willinger
Auteur : William H. Tobin, General Electric CO., Static Power Component Operation, Malvern, PA 19355.

Appears : Magnetics, IEEE Transactions on
Pages : 517 - 522
Date : Jan. 1993
Volume : 29, issue: 1 , part: 2
ISSN : 0018-9464
CODEN : IEMGAQ
Stockage : Thierry LEQUEU
Lien : private/SOMOS.pdf - 476 Ko.
Lien : SHEET155.HTM#Bibliographie

Abstract :
Life expectancy for power semiconductor devices under cyclical power is discussed in practical terms as it has evolved over
several decades. Predictions of failure, although not absolute, are supported by sound theoretical concepts based on the
generalized behavior of materials under elastic-stress conditions. With that, the known property of silicon to fracture
when subjected to a single quenching from 350 degrees C to 0 degrees C is combined with results of long-term and accelerated
life testing to establish the life expectancy curves. These would apply for specific models and defined current cycling duty
including the time gradient of temperature rise.

Subjet_terms :
life expectancy; failure prediction; long term testing; empirical diagrams; temperature excursion; power semiconductor devices;
cyclical power; materials; elastic-stress; fracture; quenching; accelerated life testing; current cycling duty; time gradient;
temperature rise; 0 to 350 degC; Si; integrated circuit testing; life testing; power electronics; power integrated circuits

Accession_Number : 4429025

References : 5
[1] : W.R. Runyan, Silicon Semiconductor Technology, McGraw-Hill Book Company, 1985.
[2] : L. Reed, J. Burke and V. Weiss, Fatigue - An Interdisciplinaty Approach, Syracuse University Press, 1964.
[3] : S. Manson, Thermal Stress and Low-Cycle Fatigue, McGraw-Hill Book Company, l966.
[4] : I. Somos, L. Eriksson and W. Tobin, "Understanding di/dt ratings and life expectancy for thyristors", Power Conversion And Intelligent Motion, pp. 56-59, February 1986.
[5] : D. Piccone and I. Somos, "Accelerated life tests for determining the life expectancy of thyristors due to di/dt failure modes", IEEE Industry Applications Society 1972 Conference Record, pp. 89-92.

  [1] :  [PAP158]  -------
  [2] :  [PAP158]  -------
  [3] :  [PAP158]  -------
  [4] : [SHEET204] I.L. SOMOS, L.O. ERIKSSON, W.H. TOBIN, Understanding di/dt ratings and life expectancy for thyristors, Power Conversion And Intelligent Motion, pp. 56-59, February 1986.
  [5] : [SHEET205] D.E. PICCONE, I.L. SOMOS, Accelerated life tests for determining the life expectancy of thyristors due to di/dt failure modes, IEEE Industry Applications Society 1972 Conference Record, pp. 89-92.


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