S. FORSTER, T. LEQUEU, R. JERISIAN, "Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3", Microelectronics Reliability, Volume 43, Issues 01, January 2003, pp. 89-98.
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Article : [ART162]

Titre : S. FORSTER, T. LEQUEU, R. JERISIAN, Degradation mechanism of power devices under di/dt thermal shocks: turn-on of a TRIAC in Q3, Microelectronics Reliability, Volume 43, Issues 01, January 2003, pp. 89-98.

Cité dans :[REVUE386] Elsevier Science, Microelectronics Reliability, Volume 43, Issue 1, Pages 1-177, January 2003.
Cité dans : [DATA033] Liste des publications de Thierry LEQUEU et activités de recherche, janvier 2018.
Auteur : S. Forster (a)(b)
Auteur : T. Lequeu (a)
Auteur : R. Jérisian (a)

Adresse :
(a) : LMP-STMicroelectronics, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France
(b) : CLOES, 2 rue E. Belin, 57070 Metz, France

Vers : Bibliographie
Volume : 43
Issues : 1
Date : january 2003
Site : http://www.elsevier.com/locate/microrel
Pages : 89 - 98
Lien : private/FORSTER4.pdf - 10 pages, 870 Ko.

Abstract :
The authors explain the degradation mechanism of a TRIAC submitted to the application of strong di/dt during the turn-on in quadrant Q3.
From reliability results,analysis of the failure modes and thermo-mechanical simulation of the structure, the authors propose a degradation model,which can be used to give the number of commutation cycles before failure of the component.


Bibliographie

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Références : 8
[1] : S. FORSTER, T. LEQUEU, R. JERISIAN, A. HOFFMANN, "3-D analysis of the breakdown localized defects of ACSTM through a TRIAC study", Microelectronics Reliability, vol. 40, pp. 1695-1700, 2000.
[2] : S. FORSTER, T. LEQUEU, R. JERISIAN, "Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects", Microelectronics Reliability, vol. 41, pp. 1677-1682, 2001.
[3] : I.L. SOMOS, L.O. ERIKSSON, W.H. TOBIN, "Understanding di/dt ratings and life expectancy for thyristors", Power Conversion And Intelligent Motion, pp. 56-59, February 1986.
[4] : S. WOLF, "Silicon Processing for the VLSI Era", Vol.2, Lattice Press,1990.
[5] : Aloisi P., "Failure diagnosis in medium power semiconductor", EPE 91, Firenze,vol.3.p.117-9.
[6] : Broek D., "Elementary engineering fracture mechanics" .Martinus Nijho .Publishers;1982.
[7] : "Semiconductor device reliability failure models", International SEMATECH Reliability Technology Advisory Board,2000.
[8] : L.F. COFFIN, "A Study of the Effects of Cyclic Thermal Stresses on a Ductile Metal", Transactions of ASME, vol. 76, pp. 931-950, 1954.
  [1] : [SHEET459] S. FORSTER, T. LEQUEU, R. JERISIAN, A. HOFFMANN, 3-D analysis of the breakdown localized defects of ACSTM through a triac study, Microelectronics Reliability, October 2000, Vol. 40, pp. 1695-1700.
  [2] :  [ART163]  S. FORSTER, T. LEQUEU, R. JERISIAN, Operation of power semiconductors under transient thermal conditions: thermal fatigue reliability and mechanical aspects, Microelectronics Reliability, Volume 41, Issues 9-10, September - October 2001, pp. 1677-1682.
  [3] : [SHEET204] I.L. SOMOS, L.O. ERIKSSON, W.H. TOBIN, Understanding di/dt ratings and life expectancy for thyristors, Power Conversion And Intelligent Motion, pp. 56-59, February 1986.
  [4] : [LIVRE006] S. WOLF, Silicon Processing of the VLSI ERA - Volume 2 - Process Integration, 1990.
  [5] : [SHEET168] P. ALOISI, Failure diagnosis in medium power semiconductor, EPE'91, Firenze, vol. 3, pp. 117-119.
  [6] : [LIVRE200] D. BROEK, Elementary Engineering Fracture Mechanics, June 1982, Martinus Nijhoff Publishers, 524 pages.
  [7] :  [PAP310]  R. BLISH, N. DURRANT, Semiconductor Device Reliability Failure Models, International SEMATECH, Technology Transfer # 00053955A-XFR, May 31, 2000, 34 pages.
  [8] : [SHEET329] L.F. COFFIN, A Study of the Effects of Cyclic Thermal Stresses on a Ductile Metal, Transactions of ASME, 1954, vol. 76, pp. 931-950.


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