R. BLISH, N. DURRANT, "Semiconductor Device Reliability Failure Models", International SEMATECH, Technology Transfer # 00053955A-XFR, May 31, 2000, 34 pages.
Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP310]

Titre : R. BLISH, N. DURRANT, Semiconductor Device Reliability Failure Models, International SEMATECH, Technology Transfer # 00053955A-XFR, May 31, 2000, 34 pages.

Cité dans : [DIV230]  Informations about International SEMATECH, Inc, juin 2001.
Cité dans :[PAP360]
Auteur : Richard Blish
Auteur : Noel Durrant
Approval : Noel Durrant - Program Manager
Approval : Dave Anderson - Director, Supplier Relations & Corporate Services
Approval : Dan McGowan - Technical Information Transfer Team Leader

Stockage : Thierry LEQUEU
Lien : 3955AXFR.pdf - 161 Ko, 34 pages.
Pages : 1 - 34
Date : 31 mai 2000
Adresse : International SEMATECH Technology Transfer - 2706 Montopolis Drive - Austin, TX 78741
Site : http://www.sematech.org
Lien : "mailto:info@sematech.org"
Vers : Table of Contents

Keywords : Reliability Modeling, Failure Mechanisms, Electromigration, Corrosion, Stress Migration

Abstract :
This review paper brings together the most prevalent and important models for reliability failures in
semiconductor devices. It gives a explanation of the failure, the failure model(s) and constraints of the models.
Examples are presented showing the application of the models for deriving acceleration factors. Original references
are included for each model.


Table of Contents

TOP

Objectives, Scope and Explanation of Symbols .3
Vers : A. ELECTROMIGRATION - References
Vers : B. CORROSION - References
Vers : C. TIME DEPENDENT DIELECTRIC BREAKDOWN - References
Vers : D. HOT CARRIER INJECTION - References
Vers : E. SURFACE INVERSION (Mobile Ions) - References
Vers : F. STRESS MIGRATION - References
Vers : G. TEMPERATURE CYCLING & THERMAL SHOCK - References
Vers : H. SOFT ERRORS (SINGLE EVENT UPSETS) - References
Vers : I. DESIGN OF EXPERIMENTS FOR DETERMINATION OF MODELING PARAMETERS
Vers : J. TIME-TO-FAILURE DISTRIBUTIONS - References


A. ELECTROMIGRATION - References

TOP

1. C. Graas, H. Le, J. McPherson and R. Havemann, IEEE-IRPS Proceedings, p. 173 (1994).
2. J. McPherson, H. Le and C. Graas, Microelectron. Reliab., Vol. 37, p. 1469 (1997).
3. S. Vaidya, et. al., "Electromigration Induced Shallow Junction Leakage with Al/Poly-Si Metallization", J. Electrochem. Soc., Vol. 130, p. 496 (1983).
4. S. Vaidya, et. al., "Shallow Junction Cobalt Silicide Contacts with Enhanced Electromigration Resistance", J. Appl. Phys. Vol. 55, p. 3514 (1984).
5. S. Steenwyk and E. Kankowski, "Electromigration in Aluminum to Ta-Silicide Contacts", IEEE-IRPS Proceedings, p. 30 (1986).
6. J. Ondrusek, C. Dunn and J. McPherson, IEEE-IRPS Proceedings, p. 154 (1987).
7. H. Huntington and A. Grone, J. Phys. Chem. Solids, Vol. 20, p. 76(1961).
8. J. Black, IEEE Trans., Vol. ED-16 (No. 4), p. 338 (1969).
9. F. d-Heurle and P. Ho, "Thin Films: Interdiffusion and Reactions," John Wiley & Sons, p. 243 (1978).
10. Blech, J. Appl. Phys., Vol. 74, p. 1203 (1976).
11. R. Filippi, G. Biery and M. Wood, Mat. Res. Soc. Symp. Proc., Vol. 309, p. 141 (1993).
12. R. Filippi, G. Biery and R. Wachnik, J. Appl. Phys., Vol. 78, p. 3756 (1995).
13. A. Oates, IEEE-IRPS Proceedings, p. 164 (1996).
14. J. Maiz, IEEE-IRPS Proceedings, p. 220 (1988).
15. L. Ting, J. May, W. Hunter and J. McPherson, IEEE-IRPS Proceedings, p. 311 (1993).


B. CORROSION - References

TOP

1. G. Schnable and R. Keen, IEEE-IRPS Proceedings, p. 170 (1969).
2. D. Peck, IEEE-IRPS Proceedings, p. 81 (1970).
3. T. Ajiki, M.Sugumoto, H. Higuchi, and S.Kumada, "A New Cyclic Biased THB Test for Power Dissipating ICs, " IEEE International Reliability Physics Symposium Proceedings,, 1979, pp. 118-126.
4. C. G. Shirley and C.E. Hong, "Optimal Acceleration of Cyclic THB Tests for Plastic Packages, "International Reliability Physics Symposium Proceedings,, 1991, pp. 12-21.
5. J. McPherson, G. Bishel and J. Ondrusek, Proceedings of Third Intern. Symp. on Corrosion and Reliability of Electronic Materials and Devices, Electrochem. Soc., V. 94-29, p. 270 (1994).
6. J. Gunn, R. Camenga and S. Malik, IEEE-IRPS Proceedings, p. 66 (1983).
7. J. Flood, IEEE-IRPS Proceedings, pp. 95-99, 1972.
8. N. Lycoudes, Solid State Technology, p. 53 (Oct. 1978).
9. K. Stringy and A. Schelling, 31 st ECC Proceedings, p. 238 (1981).
10. D. Peck, IEEE-IRPS Proceedings, p. 44 (1986).
11. C. Dunn and J. McPherson, J. Electrochem. Soc., p. 661 (1988).
12. H. Koelmans, IEEE-IRPS Proceedings, p. 168 (1974).
13. R. Lawson, British Telecom. Technol. J., Vol. 2, No. 2, p. 95 (1984).


C. TIME DEPENDENT DIELECTRIC BREAKDOWN - References

TOP

1. K. Boyko and D. Gerlach, IEEE-IRPS Proceedings, p. 1 (1989).
2. J. Suehle, P. Chaparala, C. Messick, W. Miller and K. Boyko, IEEE-IRPS Proceedings, p. 120 (1994).
3. P. Charparala, J. Suehle, C. Messick and M. Roush, IEEE-IRPS Proceedings, p. 61 (1996).
4. J. Suehle and P. Chaparala, IEEE Trans. Elect. Devices, p. 801 (1997).
5. M. Kimura, IEEE-IRPS Proceedings, p. 190 (1997).
6. J. McPherson, V. Reddy and H. Mogul, Appl. Phys. Lett., Vol. 71, p. 1101 (1997).
7. J. McPherson and H. Mogul, Appl. Phys. Lett., Vol. 71, p. 3721 (1997).
8. J. McPherson and H. Mogul, IEEE-IRPS Proceedings, p. 47 (1998).
9. E. Anolick and G. Nelson, IEEE-IRPS Proceedings, p. 8 (1979).
10. D. Crook, IEEE-IRPS Proceedings, p. 1 (1979).
11. Berman, IEEE-IRPS Proceedings, p. 204 (1991).
12. J. McPherson and D. Baglee, IEEE-IRPS Proceedings, p. 1 (1985).
13. J. McPherson and D. Baglee, J. Electrochem. Soc., Vol. 132, p1903 (1985).
14. J. McPherson, IEEE-IRPS Proceedings, p. 12 (1986).
15. Chen, S. Holland and C. Hu, IEEE-IRPS Proceedings, p. 24 (1985).
16. J. Lee, I. Chen and C. Hu, IEEE-IRPS Proceedings, p. 131 (1988).
17. Moazzami, J. Lee and C. Hu, IEEE Trans. Elect. Devices, Vol. 36, p. 2462 (1989).
18. K. Schuegraph and C. Hu, IEEE-IRPS Proceedings, p. 7 (1993


D. HOT CARRIER INJECTION - References

TOP

1. S. Aur, A. Chatterjee and T. Polgreen, IEEE-IRPS Proceedings, p. 15 (1988).
2. E. Takeda, R. Izawa, K. Umeda and R. Nagai, IEEE-IRPS Proceedings, p. 118 (1991).
3. E. Snyder, D. Cambell, S. Swanson and D. Pierce, IEEE-IRPS Proceedings, p. 57 (1993).
4. J. Wang-Ratkovic, R. Lacoe, K. Williams, M. Song, S. Brown and G. Yabiku, IEEE-IRPS Proceedings, p. 312 (1997).
5. G. LaRosa, F. Guarin, S. Rauch, A. Acovic, J. Lukaitis and E. Crabbe, IEEE-IRPS Proceedings, p. 282 (1997).
6. J.T. Yue, ULSI Technology, McGraw-Hill, p. 657 (1996).
7. P. Fang, J. Yue, and D. Wollesen, "A Method to Project Hot-Carrier-Induced Punch Through voltage Reduction for Deep Submicron LDD PMOS FETs at Room and Elevated Temperatures", IEEE-IRPS Proceedings, p. 131 (1982).
8. C. Huang, T. Rost and J. McPherson, IEEE-IRW Final Report, p. 63 (1994).


E. SURFACE INVERSION (Mobile Ions) - References

TOP

1. J. McPherson, "Accelerated Testing," Electronic Materials Handbook, Volume 1, Packaging," ASM International Publishing, p. 887 (1989).
2. E. Schlegel, G. Schnable, R. Schwartz and J. Spratt, "Behavior of Surface Ions on Semiconductor Devices," IEEE Transactions on Electron Devices, Vol. ED-15, 1968, pp. 973-979.
3. E.H. Snow, A.S. Grove, B.E. Deal, and C.T. Sah, "Ion Transport Phenomenon in Insulating Films, "J. Appl. Phys. Vol 36, p. 1664 (1965).
4. E.H. Snow and B.E. Deal, "Polarization Phenomena and Other Properties of Phosphosilicate Glass Films on Silicon," J. Electrochem. Soc., Vol 113, p. 263 (1966)
5. P. L. Hefley and J. McPherson, "The Impact of an External Sodium diffusion Source on the Reliability of MOS Circuitry IEEE-IRPS Proceedings, p. 167 (1988).
6. D.A. Stuart, "Calculations of Activation Energy of Ionic Conductivity in Silica Glass by Classical Methods, "J. Amer. Ceramic Soc, " p. 573 (1954).


F. STRESS MIGRATION - References

TOP

1. J. Klema, R. Pyle and E. Domangue, IEEE-IRPS Proceedings, p. 1 (1984).
2. J. Yue, W. Fusten and R. Taylor, IEEE-IRPS Proceedings, p. 126 (1985).
3. J. McPherson and C. Dunn, J. Vac. Soc. Technology B, p. 1321 (1987).
4. J. Yue, Reliability Chapter, "ULSI Technology," McGraw-Hill, p. 674, (1996)
5. J. McPherson, "Accelerated Testing," Electronic Materials Handbook, Volume 1 Packaging," ASM International Publishing, p887 (1989).


G. TEMPERATURE CYCLING & THERMAL SHOCK - References

TOP

1. L. Coffin, Jr., Met. Eng. Q., Vol 3, p. 15 (1963).
2. S. Manson, "Thermal Stress and Low-Cycle Fatigue," McGraw-Hill, New York, (1966).
3. C.F. Dunn and J.W. McPherson, "Temperature Cycling Acceleration Factors in VLSI Applications," IEEE-IRPS Proceedings., p. 252 (1990).
4. R. C. Blish, II "Temperature Cycling and Thermal Shock Failure Rate Modeling IEEE-IRPS Proceedings, p 110 (1997).
5. H. Caruso and A. Dasgupta, "A Fundamental Overview of Accelerated-Testing Analytic Models," 1998 Proc. of Annual Rel. and Maintainability Symp.," pp 389-393.
6. J. McPherson, "Accelerated Testing," Electronic Materials Handbook, Volume 1 Packaging," ASM International Publishing, p. 887 (1989).
7. C. Y. Li, R. Subrahamanyan, J. R. Wilcox and D. Stone, "Damage Integral Methodology for Thermal and Mechanical Fatigue of Solder Joints," Solder Joint Reliability, Theory and Applications, ed. John H. Lau, 1991, pp. 261-288.
8. P. M. Hall, "Creep and Stress Relaxation in Solder Joints," Solder Joint Reliability, Theory and Applications, ed. John H. Lau, 1991, pp. 306-332.
9. K. C. Norris and A. H. Landzberg, "Reliability of Controlled Collapse Interconnections," IBM J. R&D Vol. 13, 1969, pp. 266-271.
  [1] :  [PAP439]  R. C. Blish, II Temperature Cycling and Thermal Shock Failure Rate Modeling, IEEE-IRPS Proceedings, p 110 (1997).


H. SOFT ERRORS (SINGLE EVENT UPSETS) - References

TOP

1. May, Timothy C. and Woods, Murray H., "A New Physical Mechanism for Sift Errors in Dynamic memories," IEEE-IRPS Proceedings, pp 33-40 (1978).
2. Lantz, L., "Tutorial: Soft Errors Induced by Alpha Particles," IEEE Transactions on Reliability, Vol. 45, No. 2, June 1996.
3. Ziegler, J.F. et al, "IBM Experiments in Soft Fails in Computer Electronics (1978 -- 1994)," IBM J. of Res. Develop. No. 1, January 1996. Entire Issue is devoted to soft errors and associated topics.
4. Ziegler, J.F, "Terrestrial Cosmic Ray Intensities," IBM J. of Res. Develop., Vol. 42, No. 1, January 1998.
5. MIL-STD-883 -- Test Methods and Procedures for Microelectronics, Method 1032, Package Induced Soft Error Test Procedure (Due to Alpha Particles).
6. McKee, M.C., et al, "Cosmic Ray Neutron Induced Upsets as a Major Contributor to the Soft Error Rate of Current and Future generation DRAMs," IEEE-IRPS Proceedings, pp 1-6 (1996).


I. DESIGN OF EXPERIMENTS FOR DETERMINATION OF MODELING PARAMETERS

TOP


J. TIME-TO-FAILURE DISTRIBUTIONS - References

TOP

1. A. Wager, IRPS Tutorial, 1996
2. P.A. Tobias & D.C. Trindade, "Applied Reliability," 2nd Ed. 1996
3. J. R. King, "Probability Charts for Decision Making" TEAM (803) 323-8843 (1971)


Mise à jour le lundi 25 février 2019 à 15 h 34 - E-mail : thierry.lequeu@gmail.com
Cette page a été produite par le programme TXT2HTM.EXE, version 10.7.3 du 27 décembre 2018.

Copyright 2019 : TOP

Les informations contenues dans cette page sont à usage strict de Thierry LEQUEU et ne doivent être utilisées ou copiées par un tiers.
Powered by www.google.fr, www.e-kart.fr, l'atelier d'Aurélie - Coiffure mixte et barbier, La Boutique Kit Elec Shop and www.lequeu.fr.