Elsevier Science, "Microelectronics Reliability", Vol. 37, Issues 10-11, Pages 1421-1798, 11 October 1997.
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Revue : [REVUE199]

Titre : Elsevier Science, Microelectronics Reliability, Vol. 37, Issues 10-11, Pages 1421-1798, 11 October 1997.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.
Cité dans : [DATA241] ESREF'97, Proceedings of the 8th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, Bordeaux, France, 7-10 octobre 1997.
Auteur : Elsevier Science

Volume : 37
Issues : 10-11
Pages : 1421 - 1798
Date : 11 October 1997

[1] : Diagnostic technique for projecting gate oxide reliability and device reliability, Pages 1421-1424
Jong T. Park, Dae N. Ha, Chong G. Yu, Byung G. Park and Jong D. Lee
Lien : vide.pdf - | Journal Format-PDF (164 K)

[2] : Building-in reliability during library development: hot-carrier degradation is no longer a problem of the technologists only!, Pages 1425-1428
R. Bellens, I. Clemminck and K. van Doorselaer
Lien : vide.pdf - | Journal Format-PDF (214 K)

[3] : A new reliability prediction model for telecommunication hardware, Pages 1429-1432
Mattias Nilsson and Örjan Hallberg
Lien : vide.pdf - | Journal Format-PDF (192 K)

[4] : Lifetime prediction for PMOS and NMOS devices based on a degradation model for ate-ias-tress, Pages 1433-1436
A. Narr and A. Lill
Lien : vide.pdf - | Journal Format-PDF (194 K)

[5] : Direct parameter extraction for hot-carrier reliability simulation, Pages
1437-1440
S. Minehane, S. Healy, P. O'Sullivan, K. McCarthy, A. Mathewson and B.
Mason
Lien : vide.pdf - | Journal Format-PDF (227 K)

[6] : An on-wafer test structure to measure the effect of thermally-induced
stress on silicon devices, Pages 1441-1444
Y. Haddab, D. Manic and R. S. Popovic
Lien : vide.pdf - | Journal Format-PDF (214 K)

[7] : Computer-based training for failure analysis, Pages 1445-1448
C. Henderson
Lien : vide.pdf - | Journal Format-PDF (339 K)

[8] : An other way to assess electronics part reliability, Pages 1449-1452
P. Charpenel, P. Cavernes, J. Borowski and JM. Chopin
Lien : vide.pdf - | Journal Format-PDF (198 K)

[9] : ESD characteristics of a lateral NPN protection device in epitaxial and
non-epitaxial substrates, Pages 1453-1456
Teruo Suzuki, Seigo Ito and Hideo Monma
Lien : vide.pdf - | Journal Format-PDF (237 K)

[10] : Using an SCR as ESD protection without latch-up danger, Pages 1457-1460
Guido Notermans, Fred Kuper and Jan-Marc Luchies
Lien : vide.pdf - | Journal Format-PDF (217 K)

[11] : Improving the ESD performance of input protection circuits in retrograde
well and STI structures, Pages 1461-1464
Young-Kwan Park, Tae-Hun Kang, Chang-Hoon Choi, Jeong-Taek Kong and
Sang-Hoon Lee
Lien : vide.pdf - | Journal Format-PDF (247 K)

[12] : Dangerous parasitics of socketed CDM ESD testers, Pages 1465-1468
H. Gossner and T. Brodbeck
Lien : vide.pdf - | Journal Format-PDF (278 K)

[13] : Reliability challenges for deep submicron interconnects, Pages 1469-1477
J. W. McPherson, H. A. Le and C. D. Graas
Lien : vide.pdf - | Journal Format-PDF (532 K)

[14] : Are high resolution resistometric methods really useful for the early
detection of electromigration damage ?, Pages 1479-1482
A. Scorzoni, S. Franceschini, R. Balboni, M. Impronta, I. De Munari and F.
Fantini
Lien : vide.pdf - | Journal Format-PDF (311 K)

[15] : The thermally balanced bridge technique (TBBT) : a new high resolution
resistometric measurement technique for the study of
electromigration-induced early resistance changes in metal stripes, Pages
1483-1486
J. Van Olmen, W. De Ceuninck, L. De Schepper, A. Goldoni, A. Cervini and
F. Fantini
Lien : vide.pdf - | Journal Format-PDF (212 K)

[16] : Influence of ARC capping layer on stress induced voiding in narrow AlCu
metallisations, Pages 1487-1490
L. Arnaud, D. Mariolle, P. Moreau and L. Ulmer
Lien : vide.pdf - | Journal Format-PDF (303 K)

[17] : Early resistance change and stress/electromigration modeling in aluminum
interconnects, Pages 1491-1494
V. Petrescu, A. J. Mouthaan and W. Schoenmaker
Lien : vide.pdf - | Journal Format-PDF (202 K)

[18] : Temperature and thermal conductivity modes of scanning probe microscopy
for electromigration studies, Pages 1495-1498
A. Buck, B. K. Jones and H. M. Pollock
Lien : vide.pdf - | Journal Format-PDF (319 K)

[19] : Dielectric reliability in deep-submicron technologies: From thin to
ultrathin oxides, Pages 1499-1506
E. Vincent, S. Bruyere, C. Papadas and P. Mortini
Lien : vide.pdf - | Journal Format-PDF (498 K)

[20] : Activation of parasitic bipolar transistor during reverse recovery of
MOSFET's intrinsic diode, Pages 1507-1510
G. Busatto, G. V. Persiano, A. G. M. Strollo and P. Spirito
Lien : vide.pdf - | Journal Format-PDF (246 K)

[21] : Characteristics of intrinsic breakdown of thin reoxidized nitride for
trench capacitors, Pages 1511-1516
E. Wu, C. Hwang, R. Vollertsen, R. Kleinhenz and A. Strong
Lien : vide.pdf - | Journal Format-PDF (204 K)

[22] : Analysis of the evolution of the trapped charge distributions in 10nm SiO2
films during DC and bipolar dynamic stress, Pages 1517-1520
R. Rodriguez, M. Nafria, J. Suñe and X. Aymerich
Lien : vide.pdf - | Journal Format-PDF (253 K)

[23] : Oxide thickness dependence of nitridation effects on TDDB characteristics,
Pages : 1521-1524
M. K. Mazumder, A. Teramoto, M. Katsumata, M. Sekine, S. Kawazu and H.
Koyama
Lien : vide.pdf - | Journal Format-PDF (280 K)

[24] : Transient stressing and characterization of thin tunnel oxides, Pages
1525-1528
M. Ciappa, A. Naitana and M. Vanzi
Lien : vide.pdf - | Journal Format-PDF (257 K)

[25] : Investigation of stress induced leakage current in CMOS structures with
ultra-thin gate dielectrics, Pages 1529-1532
C. Jahan, K. Barla and G. Ghibaudo
Lien : vide.pdf - | Journal Format-PDF (230 K)

[26] : A high resolution method for measuring hot carrier degradation in matched
transistor pairs, Pages 1533-1536
R. Dreesen, W. De Ceuninck, L. De Schepper and G. Groeseneken
Lien : vide.pdf - | Journal Format-PDF (225 K)

[27] : Comparison of different on-chip ESD protection structures in a 0.35 m CMOS
technology, Pages 1537-1540
C. Richier, N. Maene, G. Mabboux and R. Bellens
Lien : vide.pdf - | Journal Format-PDF (316 K)

[28] : Gate and circuit level analysis of N-type SRAM reliability failures, Pages
1541-1544
K. Symonds, J. Wilson, P. Lindo and M. Bahrami
Lien : vide.pdf - | Journal Format-PDF (224 K)

[29] : A study of the thermal - electrical- and mechanical influence on
degradation in an aluminum - pad structure, Pages 1545-1548
X. Yu and K. Weide
Lien : vide.pdf - | Journal Format-PDF (211 K)

[30] : Investigations of stress distributions in tungsten-filled via structures
using finite element analysis, Pages 1549-1552
J. Coughlan, S. Foley and A. Mathewson
Lien : vide.pdf - | Journal Format-PDF (256 K)

[31] : Influence of thermal heating effect on pulsed DC electromigration, Pages
1553-1556
P. Waltz, L. Arnaud, G. Tartavel and G. Lormand
Lien : vide.pdf - | Journal Format-PDF (234 K)

[32] : Microstructural and surface effects on electromigration failure mechanism
in Cu interconnects, Pages 1557-1560
A. Gladkikh, M. Karpovski and A. Palevski
Lien : vide.pdf - | Journal Format-PDF (333 K)

[33] : Effects of ESD protections on latch-up sensitivity of CMOS 4-stripe
structures, Pages 1561-1564
P. Pavan, A. Pellesi, G. Meneghesso and E. Zanoni
Lien : vide.pdf - | Journal Format-PDF (210 K)

[34] : Automated placement of testing pads for electron-beam observation, Pages
1565-1568
Norio Kuji and Tadao Takeda
Lien : vide.pdf - | Journal Format-PDF (250 K)

[35] : Dual phase probing technique for IC-internal failure analysis, Pages
1569-1574
S. Görlich, O. Ritschel, N. Webster and A. Winterstein
Lien : vide.pdf - | Journal Format-PDF (338 K)

[36] : MMIC in-circuit and in-device testing with an on-wafer high frequency
electric force microscope test system, Pages 1575-1578
A. Leyk, S. Van Waasen, F. J. Tegude and E. Kubalek
Lien : vide.pdf - | Journal Format-PDF (321 K)

[37] : Absolute quantitative time resolved voltage measurements on 1 m conducting
lines of integrated circuits via electric force microscope-(EFM-) testing,
Pages : 1579-1582
J. Bangert and E. Kubalek
Lien : vide.pdf - | Journal Format-PDF (246 K)

[38] : Characterization of thermal device properties with nanometer resolution,
Pages : 1583-1586
R. M. Cramer, L. Brucchaus and L. J. Balk
Lien : vide.pdf - | Journal Format-PDF (220 K)

[39] : High sensitivity and high resolution differential interferometer :
micrometric polariscope for thermomechanical studies in microelectronics,
Pages : 1587-1590
S. Dilhaire, T. Phan, E. Schaub and W. Claeys
Lien : vide.pdf - | Journal Format-PDF (316 K)

[40] : A reliability study of titanium silicide lines using Micro-Raman
spectroscopy and emission microscopy, Pages 1591-1594
I. De Wolf, D. J.Howard, M. Rasras, A. Lauwers, K. Maex, G. Groeseneken
and H. E. Maes
Lien : vide.pdf - | Journal Format-PDF (279 K)

[41] : Modification and application of an emission microscope for continuous
wavelength spectroscopy, Pages 1595-1598
M. Rasras, I. De Wolf, G. Groeseneken and H. E. Maes
Lien : vide.pdf - | Journal Format-PDF (293 K)

[42] : Low frequency noise characterization of 0.18m Si CMOS transistors, Pages
1599-1602
T. Boutchacha, G. Ghibaudo, G. Guégan and T. Skotnicki
Lien : vide.pdf - | Journal Format-PDF (207 K)

[43] : Retarding effect of surface base compensation on degradation of noise
characteristics of BiCMOS BJTs, Pages 1603-1606
P. Llinares, S. Niel, G. Ghibaudo, L. Vendrame and J. A. Chroboczek
Lien : vide.pdf - | Journal Format-PDF (173 K)

[44] : Comments on the utilization of noise measurements for the characterization
of electromigration in metal lines, Pages 1607-1610
C. Ciofi, V. Dattilo and B. Neri
Lien : vide.pdf - | Journal Format-PDF (261 K)

[45] : Layers decoration on FIB cross-sections, Pages 1611-1614
Guy Perez, Frédéric Courtade, Bruno Benteo and Jacques Lin-Kwan
Lien : vide.pdf - | Journal Format-PDF (290 K)

[46] : Three-dimensional analysis for multilayer wiring in sub-half-micron
devices, Pages 1615-1618
Naofumi Murata, Yukinori Hirose, Kazuyoshi Maekawa, Masahiko Ikeno and
Hiroshi Koyama
Lien : vide.pdf - | Journal Format-PDF (295 K)

[47] : New methodology for localizing faults in programmable and commercial
circuits, Pages 1619-1622
Romain Desplats, Philippe Perdu, François Marc, Yves Danto and Patrick
Welby
Lien : vide.pdf - | Journal Format-PDF (233 K)

[48] : Micro-extraction spectrometers for voltage contrast in the SEM, Pages
1623-1626
A. R. Dinnis and A. K. Dinnis
Lien : vide.pdf - | Journal Format-PDF (250 K)

[49] : Effect of tip shape in the design of long distance electrostatic force
microscopy, Pages 1627-1630
S. Belaidi, P. Girard and G. Leveque
Lien : vide.pdf - | Journal Format-PDF (191 K)

[50] : Applications of scanning electrical force microscopy, Pages 1631-1634
F. Müller, A. -D. Müller, M. Hietschold and S. Kämmer
Lien : vide.pdf - | Journal Format-PDF (315 K)

[51] : Noise and DC characteristics of power silicon diodes, Pages 1635-1638
R. Crook and B. K. Jones
Lien : vide.pdf - | Journal Format-PDF (224 K)

[52] : In situ ageing, a development of the in situ techniques for
building-in-reliability, Pages 1639-1642
L. Galateanu
Lien : vide.pdf - | Journal Format-PDF (231 K)

[53] : Failure mechanism and spice modeling of AlGaAs/GaAs HBT long-term current
instability, Pages 1643-1650
J. J. Liou and S. H. Sheu
Lien : vide.pdf - | Journal Format-PDF (426 K)

[54] : Ga As power MMIC: a design methodology for reliability, Pages 1651-1654
J L. Muraro, F. Coppel, G. Gregoris, P G Tizien, J L Roux, J. Graffeuil
and R. Plana
Lien : vide.pdf - | Journal Format-PDF (231 K)

[55] : In-situ study of the degradation behaviour of GaAs MESFETs for hi-rel
applications, Pages 1655-1658
R. Petersen, W. De Ceuninck, L. De Schepper and G. Grégoris
Lien : vide.pdf - | Journal Format-PDF (211 K)

[56] : Reliability study on three-dimensional Au/WSiN interconnections for
ultra-compact MMICs, Pages 1659-1662
Hirohiko Sugahara, Masakatsu Kimizuka, Yoshino K. Fukai, Makoto Hirano and
Fumiaki Hyuga
Lien : vide.pdf - | Journal Format-PDF (264 K)

[57] : Thermal simulation and characterisation of the reliability of THz Schottky
diodes, Pages 1663-1666
M. Brandt, M. Schüler, E. Parmeggiani, C. Lin, A. Simon and H. L.
Hartnagel
Lien : vide.pdf - | Journal Format-PDF (236 K)

[58] : Finite element method applied to stress simulation of high power 980nm
pump lasers, Pages 1667-1670
M. Manna, F. Magistrali, M. Maini and D. Reichenbach
Lien : vide.pdf - | Journal Format-PDF (222 K)

[59] : SiC-diodes forward surge current failure mechanisms: experiment and
simulation, Pages 1671-1674
A. Udal and E. Velmre
Lien : vide.pdf - | Journal Format-PDF (268 K)

[60] : Analysis of hot electron degradations in pseudomorphic HEMTs by DCTS and
LF noise characterization, Pages 1675-1678
N. Labat, N. Saysset, A. Touboul, Y. Danto, P. Cova and F. Fantini
Lien : vide.pdf - | Journal Format-PDF (220 K)

[61] : Development of "kink" in the output I-V characteristics of pseudomorphic
HEMT's after hot-electron accelerated testing, Pages 1679-1682
G. Meneghesso, B. Cogliati, G. Donzelli, D. Sala and E. Zanoni
Lien : vide.pdf - | Journal Format-PDF (252 K)

[62] : Impact of InP HEMT epilayer designs on side gating effects., Pages
1683-1686
C. Berthelemot, P. Vigier, J. M. Dumas and J. C. Harmand
Lien : vide.pdf - | Journal Format-PDF (196 K)

[63] : An investigation into electrical parameter settling times of GaAs FETs and
MMICs, Pages 1687-1690
F. Coppel, J. M. Dumas and J. L. Cazaux
Lien : vide.pdf - | Journal Format-PDF (170 K)

[64] : Characterisation of degradation mechanisms in resonant tunnelling diodes,
Pages : 1691-1694
A. Vogt, M. Brandt, A. Sigurdardottir, M. Schüssler, D. Peña, A. Simon, H.
L. Hartnagel, M. Rodewald, M. Roesner, H. Fuess, S. N. N. Goswami and K.
Lal
Lien : vide.pdf - | Journal Format-PDF (261 K)

[65] : An automatic adaptation method for heterojunction bipolar transistor
dynamic test, Pages 1695-1698
S. Gauffre, G. Duchamp, L. Casadebaig, J. Pistre and A. Cazarre
Lien : vide.pdf - | Journal Format-PDF (150 K)

[66] : Failure Mechanisms of GaAs Mesfets with Cu/Refractory Metallized Gates,
Pages : 1699-1702
Feng Ting, A. Dimoulas, Aris Christou, G. Constantinidis and Z.
Hatzopoulos
Lien : vide.pdf - | Journal Format-PDF (240 K)

[67] : Bias stress reliability of Be-, Zn- and C-doped base microwave HBTs, Pages
1703-1706
A. A. Rezazadeh, T. Ahmad and M. A. Crouch
Lien : vide.pdf - | Journal Format-PDF (156 K)

[68] : Experimental Analysis and 2D Simulation of AlGaAs/GaAs HBT Base Leakage
Current, Pages 1707-1710
C. Maneux, N. Labat, N. Saysset, A. Touboul and Y. Danto
Lien : vide.pdf - | Journal Format-PDF (231 K)

[69] : Cosmic ray induced failures in high power semiconductor devices, Pages 1711-1718
H. R. Zeller
Lien : private/ZELLER1.pdf - | Journal Format-PDF (356 K)

  [1] :  [ART260]  H. R. ZELLER, Cosmic ray induced failures in high power semiconductor devices, Microelectronics and Reliability, Volume 37, Issues 10-11, 11 October 1997, pp. 1711-1718.

[70] : Substrate-to-base solder joint reliability in high power IGBT modules, pages 1719-1722
E. Herr, T. Frey, R. Schlegel, A. Stuck and R. Zehringer
Lien : private/HERR1.pdf - | Journal Format-PDF (245 K)

  [1] :  [ART223]  E. HERR, T. FREY, R. SCHLEGEL, A. STUCK, R. ZEHRINGER, Substrate to base solder joint reliability in high-power IGBT modules, Microelectron. Reliab. Vol. 37, 1997, pp. 1719-1722.

[71] : Reliability issues in 650V high voltage bipolar-CMOS-DMOS integrated circuits, Pages 1723-1726
Jacob A. van der POL, Han J. Gerritsen, Rene T. H. Rongen, Peter P. M. C. Groeneveld, Peter W. Ragay and Henk A. van den Hurk
Lien : private/JACOB1.pdf - | Journal Format-PDF (275 K)

  [1] :  [ART231]  J.A. van der POL, H.J. Gerritsena, R.T.H. Rongena, P.P.M.C. Groenevelda, P.W. Ragaya, H.A. van den Hurk, Reliability issues in 650V high voltage bipolar-CMOS-DMOS integrated circuits, Microelectronics and Reliability, Volume 37, Issues 10-11, 11 October

[72] : A laser beam method for evaluation of thermal time constant in smart power
devices, Pages 1727-1730
N. Seliger, D. Pogany, C. Fürböck, P. Haba, E. Gornik and M. Stoisiek
Lien : vide.pdf - | Journal Format-PDF (265 K)

[73] : Thermal characterization of IGBT power modules, Pages 1731-1734
P. Cova, M. Ciappa, G. Franceschini, P. Malberti and F. Fantini
Lien : private/COVA3.pdf - | Journal Format-PDF (219 K)

  [1] :  [ART218]  P. COVA, M. CIAPPA, G. FRANCESCHINI, P. MALBERTI, F. FANTINI, Thermal characterization of IGBT power modules, Microelectronics Reliability, Vol. 37, Issues 10-11, October 1997, pp. 1731-1734.

[74] : Reliability of smart power devices, Pages 1735-1742
B. Murari
Lien : vide.pdf - | Journal Format-PDF (595 K)

[75] : Suppressing the Parasitic Bipolar Action of SOI-MOSFETs by Using Back-Side Bias-Temperature Treatment, Pages 1743-1746
Hiroshi Koizumi, Masakazu Shimaya and Toshiaki Tsuchiya
Lien : vide.pdf - | Journal Format-PDF (221 K)

[76] : New Understanding of LDD NMOS Hot-Carrier Degradation and Device Lifetime at Cryogenic Temperatures, Pages 1747-1754
Janet Wang-Ratkovic, Ronald C. Lacoe, Kenneth P. MacWilliams, Miryeong Song, Stephanie Brown and Garenn Yabiku
Lien : vide.pdf - | Journal Format-PDF (591 K)

[77] : Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions, Pages 1755-1758
A. Hamidi and G. Coquery
Lien : private/HAMIDI3.pdf - | Journal Format-PDF (319 K)

  [1] : [SHEET362] A. HAMIDI, G. COQUERY, R. LALLEMAND, Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions, Microelectronics and Reliability, vol. 37, no. 10-11, Oct-Nov, 1997, pp. 1755-1758.

[78] : High-temperature-reverse-bias testing of power VDMOS transistors, Pages 1759-1762
N. Toi, B. Pei and N. Stojadinovi
Lien : vide.pdf - | Journal Format-PDF (275 K)

[79] : Dielectric testing for integrated power devices, Pages 1763-1766
S. Oussalah and R. Jerisian
Lien : private/OUSSALAH2.pdf - | Journal Format-PDF (185 K)

  [1] :  [PAP244]  S. OUSSALAH, R. JERISIAN, Dielectric testing for integrated power devices, Microelectronics and Reliability, Vol. 37, Issues 10-11, pp. 1763-1766.

[80] : Bias temperature reliability of P-channel high-voltage devices, Pages 1767-1770
A. Demesmaeker, A. Pergoot and P. De Pauw
Lien : vide.pdf - | Journal Format-PDF (218 K)

[81] : High performance microsystem packaging: A perspective, Pages 1771-1781
A. D. Romig Jr., P. V. Dressendorfer and D. W. Palmer
Lien : vide.pdf - | Journal Format-PDF (714 K)

[82] : Mechanical response of solder joints in flip-chip type structures, Pages 1783-1786
A. Soper, G. Pozza, M. Ignat and G. Parat
Lien : vide.pdf - | Journal Format-PDF (243 K)

[83] : Ultrasonic images interpretation improvement for microassembling technologies characterisation, Pages 1787-1790
L. Bechou, Y. Ousten, B. Tregon, F. Marc, Y. Danto, R. Even and P. Kertesz
Lien : vide.pdf - | Journal Format-PDF (314 K)

[84] : Micromachined Structure Reliability Testing Specificity. The Motorola MGS1100 Gas Sensor Example, Pages 1791-1794
J. M. Bosc and J. P. Odile
Lien : vide.pdf - | Journal Format-PDF (237 K)

[85] : Evaluation of Stresses in Packaged ICs by In Situ Measurements with an Assembly Test Chip and Simulation, Pages 1795-1798
C. Ducos, E. Saint Christophe, H. Frémont, G. N'Kaoua, C. Pellet and Y. Danto
Lien : vide.pdf - | Journal Format-PDF (388 K)

[86] : Editorial, Pages ix-x
Journal Format-PDF (74 K)

[87] : Index, Pages I-II
Journal Format-PDF (79 K)


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