H. R. ZELLER, "Cosmic ray induced failures in high power semiconductor devices", Microelectronics and Reliability, Volume 37, Issues 10-11, 11 October 1997, pp. 1711-1718.
Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART260]

Titre : H. R. ZELLER, Cosmic ray induced failures in high power semiconductor devices, Microelectronics and Reliability, Volume 37, Issues 10-11, 11 October 1997, pp. 1711-1718.

Cité dans :[REVUE199] Elsevier Science, Microelectronics Reliability, Vol. 37, Issues 10-11, Pages 1421-1798, 11 October 1997.
Cité dans :[ART227]
Cité dans : [ART265]  H. R. ZELLER, Cosmic ray induced failures in high power semiconductor devices, Microelectronics and Reliability, Volume 37, Issues 3, March 1997, pp. 534.
Auteur : H. Zeller

Vers : Bibliographie
Lien : ART227.HTM#Bibliographie - référence [32]

Adresse : ABB Semiconductors AG Lenzburg Switzerland
Tel. :
Fax. :
Source : Microelectronics and Reliability
Volume : 37
Issues : 10-11
Date : 11 October 1997
Pages : 1711 - 1718
DOI :
PII : S0026-2714(97)00146-7
Lien : private/ZELLER1.pdf - 357 Ko, 8 pages.
Switches :
Puissance :
Logiciel :
Stockage :

Abstract :
We present a general model for cosmic ray induced failures in high voltage
devices. The only relevant model assumption is that the local probability
depends only on the local electrical field. This model leads to a universal
master curve for the failure rates of GTO's, thyristors and diodes. The IGBT is
more complex because of the complex field distribution. The predicted and
observed failure rates in IGBT's are higher than in GTO devices with comparable
axial designs. By comparison with burst charge data on DRAM's we show that for
field above 120 kV/cm the failure rate is controlled by neutron induced Si
recoils, at smaller field by muon - Si processes.

Index_Terms: Semiconductor device manufacture; Cosmic rays; Semiconductor device models; Electric fields; Thyristors; Semiconductor diodes; Bipolar transistors; High power device; Cosmic ray induced failure

Infos : Part of this work has been performed within the Brite-Euram program
RAPSDRA and has been sponsored by the Swiss Federal Office for Science and Education.

  [1] :  [DIV339]  BE 95-2105, RAPSDRA: Reliability of Advanced Power Semiconductors for Railway Traction Applications.


Bibliographie

TOP

Références : 7
[1] : H. Kabza et at., Cosmic Radiation as a Cause for Power Device Failure and Possible Countermeasures, Proceedings of the 6th International Symposillm on Powver Semiconductor Devices & IC's, Davos 1994, Ed. W. Fichtner, A. Jaecklin, D. Aemmer, Hartung-Gorre, Konstanz Germany 1994
[2] : H. Matsuda et al., Analysis of GTO Failure Mode during DC Voltage Blocking, Proceedings of the 6th Internatiollal Symposium on Power Semiconductor Devices & IC's, Davos 1994, Ed. W. Fichtner, A. Jaeck1in, D. Aemmer, Hartung-Gorre, Konstanz Germany 1994
[3] : H.R. Zeller, Cosmic Ray Induced Breakdown in High Voltage Semiconductor Devices, Microscopic Model and Phenomenological Lifetime Prediction, Proceedings of the 6th Intemational Symposium on Power Semiconductor Devices & IC's, Davos 1994, Ed. W. Fichtner, A. Jaecklin, D. Aemmer, Hartung-Gorre, Konstanz Germany 1994
[4] : J.F. Ziegler and W.A. Lanford, The effect of sea level cosmic rays on electronic devices. J:App/. Phys. 52,4305-4312, (1981)
[5] : W.R. McKee, H.P. McAdams. E.B. Smith, J.W. McPherson, J.W. Janzen, J.C. Ondrusek. A.E. Hyslop. D.E. Russell, R.A. Coy, D.W. Bergman, N.Q. Nguyen, T.J. Aton, L. W. Block, V.C. Huynh, Cosmic Ray Neutron Induced Upsets as a Major Contributor to the Soft Error Rate of Current and Future Generation DRAMs.. 1996 IEEE International Reliability Physics Proceedings, IEEE Catalog No. 95CH35825
[6] : H.R. Zeller, Cosmic Ray Induced Failures in High Power Devices. .Solid-State Electronics 38, 2041-2046 ( 1995)
[7] : P. Voss, K.H. Maier. W. Meczynski, H.W.Becker. E. Normand. J.L. Wert. D.I. Oberg, P .P .Majewski, Irradiation experiments with high voltage power devices as a possible means to predict failure rates due to cosmic rays. 1997 IEEE International Symposium on Power Semiconductor Device's and ICs. Weimar, Germany 1997. IEEE catalog No. 97CH36086


Mise à jour le lundi 25 février 2019 à 15 h 31 - E-mail : thierry.lequeu@gmail.com
Cette page a été produite par le programme TXT2HTM.EXE, version 10.7.3 du 27 décembre 2018.

Copyright 2019 : TOP

Les informations contenues dans cette page sont à usage strict de Thierry LEQUEU et ne doivent être utilisées ou copiées par un tiers.
Powered by www.google.fr, www.e-kart.fr, l'atelier d'Aurélie - Coiffure mixte et barbier, La Boutique Kit Elec Shop and www.lequeu.fr.