W. WU, G. GAO, L. DONG, Z. WANG, M. HELD, P. JACOB, P.SCACCO, "Thermal reliability of power insulated gate bipolar transistor (IGBT) modules", 1996, Proceedings of the 12th Annual IEEE SEMI THERM Symposium, pp. 136-141.
Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET158]

Info : INSPEC Answer Number 44 - 22/02/2000

Titre : W. WU, G. GAO, L. DONG, Z. WANG, M. HELD, P. JACOB, P.SCACCO, Thermal reliability of power insulated gate bipolar transistor (IGBT) modules, 1996, Proceedings of the 12th Annual IEEE SEMI THERM Symposium, pp. 136-141.

Cité dans : [DATA035] Recherche sur les mots clés thermal + fatigue + semiconductor et reliability + thermal + cycle, mars 2004.
Cité dans :[99DIV133] Recherche sur l'auteur Peter JACOB, juin 2000.
Cité dans :[SHEET321]
Auteur : Wuchen Wu
Auteur : Guo Gao
Auteur : Limin Dong (Electron. Eng. Dept., Beijing Polytech. Univ., China);
Auteur : Zhengyuan Wang
Auteur : Held M.
Auteur : Jacob P.
Auteur : Scacco P.

Lien : SHEET321.HTM#Bibliographie - référence [14].
Source : Twelfth Annual IEEE Semiconductor Thermal Measurement and Management Symposium. Proceedings (Cat. No.96CH35890) New York, NY, USA: IEEE, 1996.
Pages : 136 - 141 of xiii+251 pp.
Conference : Austin, TX, USA
Date : 5-7 March 1996
Price : CCCC 0 7803 3139 7/96/$4.00
ISBN : 0-7803-3139-7
Language : English
Stockage : Thierry LEQUEU
Lien : private/WUCHEN.pdf -449 Ko.

Abstract :
Thermal behavior of power insulated gate bipolar transistor (IGBT)
modules was studied in this paper experimentally. Due primarily to
the thermal mismatch in IGBT sandwich structure, thermal stress
induced solder fatigue failures, such as the forming and growing of
voids and cracks in IGBT solder layers, were quasi-dynamically
observed in thermal cycling test. Thermal stress simulation provided
stress distribution and bending deformation in IGBT packaging
numerically, which is in agreement with the test results. Emitter
bonding wire lifting failure and local overheat induced chip
burn-out failure, both observed in intermittent operating test,
indicate that thermal nonuniform distribution is a main reason
affecting IGBT reliability. The study results of this paper are
profitable to high reliable IGBT module manufacture and application.

Accession_Number : 1996:5392486

Appears : Semiconductor Thermal Measurement and Management Symposium, 1996. SEMI-THERM XII. Proceedings., Twelfth Annual IEEE
Info : Page : 136 - 141, 5-7 March 1996, ISBN: 0-7803-3139-7, IEEE Catalog Number: 96CH35890, Total Pages: xiii+251

Abstract :
Thermal behavior of power insulated gate bipolar transistor
(IGBT) modules was studied in this paper experimentally. Due
primarily to the thermal mismatch in IGBT sandwich structure,
thermal stress induced solder fatigue failures, such as the
forming and growing of voids and cracks in IGBT solder layers,
were quasi-dynamically observed in thermal cycling test. Thermal
stress simulation provided stress distribution and bending
deformation in IGBT packaging numerically, which is in agreement
with the test results. Emitter bonding wire lifting failure and
local overheat induced chip burn-out failure, both observed in
intermittent operating test, indicate that thermal nonuniform
distribution is a main reason affecting IGBT reliability. The
study results of this paper are profitable to high reliable IGBT
module manufacture and application.

Subjet_terms :
semiconductor device reliability; insulated gate bipolar
transistors; power transistors; thermal stresses; fatigue;
thermal stress cracking; semiconductor device packaging; bending;
thermal reliability; power insulated gate bipolar transistor;
thermal mismatch; sandwich structure; thermal stress; solder
fatigue failures; voids; cracks; thermal cycling test; stress
distribution; bending deformation; packaging; emitter bonding
wire lifting failure; local overheat induced chip burn-out;
intermittent operating test; thermal nonuniform distribution

References : 6 refs.
[1] : B.J. Baliga, "Power Semiconductor Devices for 1990s," Microelectronics Journal, Vol. 24, pp. 31-39, Jan. 1993.
[2] : B.K. Bose, "Recent Advance in Power Electronics," IEEE Trans. Power EIectronics, Vol. 7, pp. 2-16, Jan. 1992.
[3] : G.A. Lang, et al., "Thermal Fatigue in Silicon Power Transistors", IEEE Trans. Electron Devices, Vol. ED-17, pp. 787-793, 1970.
[4] : LESIT PZT REPORT L30, ETH Zurich, 9th, February, 1994.
[5] : Paolo Antognetti, "Power integrated Circuits: Physics, Design, and Applications", McGraw-Hill Book Company. 1986. pp. 8.61-8.64.
[6] : Y. Takahashi, T. Koga, H. Kirihata, Y. Seki,"2,5 KV 100A u-stack IGBT", ISPSD'94, pp. 25-30.

  [1] : [LIVRE015] B.J. BALIGA, Power Semiconductor devices, 1996.
  [2] : [LIVRE104] B.K. BOSE, Power Electronics and Drives, Prentice Hall, 1986.


Mise à jour le lundi 25 février 2019 à 15 h 36 - E-mail : thierry.lequeu@gmail.com
Cette page a été produite par le programme TXT2HTM.EXE, version 10.7.3 du 27 décembre 2018.

Copyright 2019 : TOP

Les informations contenues dans cette page sont à usage strict de Thierry LEQUEU et ne doivent être utilisées ou copiées par un tiers.
Powered by www.google.fr, www.e-kart.fr, l'atelier d'Aurélie - Coiffure mixte et barbier, La Boutique Kit Elec Shop and www.lequeu.fr.