Revue : [REVUE294]

Titre : Elsevier Science, Microelectronics Reliability, Volume 42, Issue 2, Pages 157-305, February 2002.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.

Volume : 42
Issue : 2
Pages : 157 - 305
Date : February 2002

[1] : Breakdown fields and conduction mechanisms in thin Ta2O5 layers on Si for high density DRAMs, Pages 157-173
E. Atanassova and A. Paskaleva
Lien : vide.pdf - | Article | Journal Format-PDF (560 K)

[2] : The effect of transition region on the direct tunneling current and Fowler¯Nordheim tunneling current oscillations in ultrathin MOS
structures, Pages 175-181
Lingfeng Mao, Heqiu Zhang, Changhua Tan and Mingzhen Xu
Lien : vide.pdf - | Article | Journal Format-PDF (272 K)

[3] : 1/f Noise separated from white noise with wavelet denoising, Pages 183-188
Lei Du, Yiqi Zhuang and Yong Wu
Lien : vide.pdf - | Article | Journal Format-PDF (150 K)

[4] : On discrete random dopant modeling in drift-diffusion simulations: physical meaning of `atomistic' dopants, Pages 189-199
Nobuyuki Sano, Kazuya Matsuzawa, Mikio Mukai and Noriaki Nakayama
Lien : vide.pdf - | Article | Journal Format-PDF (1108 K)

[5] : Effect of mechanical stress induced by etch-stop nitride: impact on deep-submicron transistor performance, Pages 201-209
Shinya Ito, Hiroaki Namba, Tsuyoshi Hirata, Koichi Ando, Shin Koyama,
Nobuyuki Ikezawa, Tatsuya Suzuki, Takehiro Saitoh and Tadahiko Horiuchi
Lien : vide.pdf - | Article | Journal Format-PDF (667 K)

[6] : Power capability limits of power MOSFET devices, Pages 211-218
Young S. Chung and Bob Baird
Lien : private/CHUNG1.pdf - | Article | Journal Format-PDF (351 K)

  [1] :  [ART232]  Y.S. CHUNG,  B. BAIRD, Power capability limits of power MOSFET devices, Microelectronics Reliability, Volume 42 , Issues 2, February 2002, pp. 211-218.

[7] : Changes in the characteristics of CuInGaSe2 solar cells under light irradiation and during recovery: degradation analysis by the feeble light measuring method, Pages 219-223
Takeshi Yanagisawa, Takeshi Kojima, Tadamasa Koyanagi, Kiyoshi Takahisa and Kuniomi Nakamura
Lien : vide.pdf - | Article | Journal Format-PDF (198 K)

[8] : Use of scanning capacitance microscopy for controlling wafer processing, Pages 225-231
O. Jeandupeux, V. Marsico, A. Acovic, P. Fazan, H. Brune and K. Kern
Lien : vide.pdf - | Article | Journal Format-PDF (276 K)

[9] : The processing technology and electronic packaging of CVD diamond: a case
study for GaAs/CVD diamond plastic packages, Pages 233-252
Philip M. Fabis
Lien : vide.pdf - | Article | Journal Format-PDF (1853 K)

[10] : Reliability of via-in-pad structures in mechanical cycling fatigue, Pages
253-258
K. Jonnalagadda
Lien : vide.pdf - | Article | Journal Format-PDF (289 K)

[11] : Analysis of thermal stresses in metal interconnects with multilevel
structures, Pages 259-264
M. S. Kilijanski and Y. -L. Shen
Lien : vide.pdf - | Article | Journal Format-PDF (177 K)

[12] : Interconnecting to aluminum- and copper-based semiconductors
(electroless-nickel/gold for solder bumping and wire bonding), Pages
265-283
Andrew J. G. Strandjord, Scott Popelar and Christine Jauernig
Lien : vide.pdf - | Article | Journal Format-PDF (1565 K)

[13] : Wirebond profiles characterized by a modified linkage-spring model which
includes a looping speed factor, Pages 285-291
Yu-Lung Lo and Chih-Chiang Tsao
Lien : vide.pdf - | Article | Journal Format-PDF (476 K)

[14] : Underfill of flip chip on organic substrate: viscosity, surface tension,
and contact angle, Pages 293-299
Jinlin Wang
Lien : vide.pdf - | Article | Journal Format-PDF (294 K)

[15] : Methodology for predicting solder joint reliability in semiconductor packages, Pages 301-305
Rajendra D. Pendse and Peng Zhou
Lien : private/Pendse1.pdf - | Article | Journal Format-PDF (174 K)

  [1] :  [ART236]  R.D. PENDSE, P. ZHOUB, Methodology for predicting solder joint reliability in semiconductor packages, Microelectronics Reliability, Volume 42, Issues 2, February 2002, pp. 301-305.

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