R. COVA, F. FASCE, P. PAMPILI, M. PORTESINE, G. SOZZI, P.E. ZANI, "High reliable high power diode for welding applications", ESREF'2004, 4-8 octobre 2004, ETH-Zurich, Switzerland, 4 pages.
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Article : [PAP523]

Titre : R. COVA, F. FASCE, P. PAMPILI, M. PORTESINE, G. SOZZI, P.E. ZANI, High reliable high power diode for welding applications, ESREF'2004, 4-8 octobre 2004, ETH-Zurich, Switzerland, 4 pages.

Cité dans :[REVUE538] Elsevier Science, Microelectronics Reliability, Volume 44, Issues 9-11, Pages 1281-1890, September-November 2004.
Cité dans : [DIV423]  ESREF'2004, 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, du 4 au 8 octobre 2004, ETH, Zurich, Switzerland.
Auteur : P. Cova (a)
Auteur : F. Fasce (b)
Auteur : P. Pampili (b)
Auteur : M. Portesine (b)
Auteur : G. Sozzi (a)
Auteur : P.E. Zani (b)

Adresse : (a) Dipartimento di Ingegneria dell’Informazione, University of Parma, Parco Area delle Scienze, 181/A - 43100 Parma, Italy
Adresse : (b) POSEICO S.p.A, via N. Lorenzi, 8 - 16152 Genova, Italy
Source : ESREF'2004
Date : 4-8 octobre 2004
Lieu : ETH-Zurich, Switzerland.
Pages : 1 - 4
Lien : private/COVA4.pdf - 911 Ko, 5 pages.
Vers : Bibliographie

Abstract :
Long-term power cycling of high power diodes for welding application is presented. The devices are packaged
in an ultra-slim flat package, which allows very high heat sinking capability and rating current. Tests with different
operating conditions were carried out and the results compared with the few data available in literature. Our devices
show very good lifetime, especially considering that all tests were terminated without any performance degradation.
Finally a thermo-electrical model of the device was built and will be used for both validation of lumped element
thermal models and evaluation of new design solutions.



References : 8
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[2] : Crovetto C, Bigatti P, Fasce F, Pasqualetti M, Portesine M, Scicolone R. High capability, high reliability ultra-slim diode for welding applications. Proc PCIM Conference, Nurberg, 2000.
[3] : Cova P, Nicoletto G, Pirondi A, Portesine M, Pasqualetti M. Power cycling on press-pack IGBT: measurements and thermomechanical simulation. Proc ESREF, 1999. p. 1165-70.
[4] : Somos IL, Piccone DE, Willinger LJ, Tobin WH. Power semiconductors empirical diagram expressing life as a function of temperature excursion. IEEE Trans on Magnetics 1993;29:517-22.
[5] : Gunturi G, Assal J, Schneider D, Eiche S. Innovative metal system for IGBT press pack modules. Proc ISPSD, 2003. p. 110-3.
[6] : Wakeman FJ, Lockwood GW. Electromechanical evaluation of a bondless pressure contact IGBT. Proc IEE Circuits, Devices, Systems 2001;148:89-93.
[7] : Shammas NYA, Rodriguez MP, Masana F. A simple method for evaluating the transient thermal response of semiconductor devices. Microelectronics Reliability 2002;42:109-17.
[8] : Pampili P, Portesine M, Cova P, Sozzi G. A software tool for thermal simulation and rating evaluation of high power silicon devices. Proc Silicon Workshop, Genova, 2004.

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