Revue : [REVUE538]

Titre : Elsevier Science, Microelectronics Reliability, Volume 44, Issues 9-11, Pages 1281-1890, September-November 2004.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.
Cité dans : [DIV423]  ESREF'2004, 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, du 4 au 8 octobre 2004, ETH, Zurich, Switzerland.

Volume : 44
Issues : 9-11
Pages : 1281 - 1890
Date : September-November 2004
Info : 15th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
Lieu : Zurich, Switzerland 20041004/08
Edited : by M. Ciappa, W. Fichtner

[1] : Full ball shear metrology as defect detection and analysis tool for solder joint reliability assessment on direct immersion gold technology
Pages : 1281-1285
Lien : vide.pdf - (834 K)

[2] : Characterization and fatigue damage simulation in SAC solder joints
Pages : 1287-1292
Lien : vide.pdf - (1700 K)

[3] : Effect of long and short Pb-free soldering profiles of IPC/JEDEC J-STD-020 on plastic SMD packages
Pages : 1293-1297
Lien : vide.pdf - (984 K)

[4] : Reliability of Low-Cost PCB Interconnections for Telecommunication Applications
Pages : 1299-1304
Lien : vide.pdf - (1031 K)

[5] : Effect of bonding pressure on reliability of flip chip joints on flexible and rigid substrates
Pages : 1305-1310
Lien : vide.pdf - (1261 K)

[6] : How to study delamination in plastic encapsulated devices
Pages : 1311-1316
Lien : vide.pdf - (1356 K)

[7] : Characterization and Modelling of Moisture Driven Interface Failures
Pages : 1317-1322
Lien : vide.pdf - (1619 K)

[8] : Metal migration in epoxy encapsulated ECL devices
Pages : 1323-1330
Lien : vide.pdf - (1700 K)

[9] : Influence of the thermo-mechanical residual state on the power assembly modellization
Pages : 1331-1335
Lien : vide.pdf - (813 K)

[10] : Study of influence of failure modes on lifetime distribution prediction of 1.55 µm DFB Laser diodes using weak drift of monitored parameters during ageing tests
Pages : 1337-1342
Lien : vide.pdf - (1081 K)

[11] : Comparative study of thermal cycling and thermal shocks tests on electronic components reliability
Pages : 1343-1347
Lien : private/MOREAU6.pdf - 978 Ko, 5 pages.

  [1] :  [ART586]  S. MOREAU, T. LEQUEU, R. JERISIAN, Comparative study of thermal cycling and thermal shock tests on electronic components reliability, Elsevier Science, Microelectronics Reliability, Volume 44, Issues 9-11, September-November 2004, pp.  1343-1347.

[12] : Integrated thermo-mechanical design and qualification of wafer backend structures
Pages : 1349-1354
Lien : vide.pdf - (1430 K)

[13] : Non destructive control of flip chip packages for space applications
Pages : 1355-1359
Lien : vide.pdf - (976 K)

[14] : Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors
Pages : 1361-1368
Lien : vide.pdf - (1309 K)

[15] : Reliability Investigation of Gallium Nitride HEMT
Pages : 1369-1373
Lien : vide.pdf - (1086 K)

[16] : Hot carrier aging degradation phenomena in GaN based MESFETs
Pages : 1375-1380
Lien : vide.pdf - (620 K)

[17] : Temperature-dependent breakdown and hot carrier stress of PHEMTs
Pages : 1381-1385
Lien : vide.pdf - (564 K)

[18] : On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise
Pages : 1387-1392
Lien : vide.pdf - (961 K)

[19] : Field Failure Mechanism Investigation of GaAs based HBT Power Amplifier Mmodule (PAM)
Pages : 1393-1398
Lien : vide.pdf - (1395 K)

[20] : Reliability of power electronic devices against cosmic radiation-induced failure
Pages : 1399-1406
Lien : vide.pdf - (1513 K)

[21] : The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure
Pages : 1407-1411
Lien : vide.pdf - (662 K)

[22] : Semiconductors in high temperature applications – a future trend in automotive industry
Pages : 1413-1417
Lien : vide.pdf - (674 K)

[23] : Analysis of PowerMOSFET chips failed in thermal instability
Pages : 1419-1424
Lien : vide.pdf - (1320 K)

[24] : Partial Discharge Failure Analysis of AIN Substrates for IGBT Modules
Pages : 1425-1430
Lien : vide.pdf - (1329 K)

[25] : Investigation of IGBT turn-on failure under high applied voltage operation
Pages : 1431-1436
Lien : vide.pdf - (1256 K)

[26] : High reliable high power diode for welding applications
Pages : 1437-1441
Lien : private/COVA4.pdf - 911 Ko, 5 pages.

  [1] :  [PAP523]  R. COVA, F. FASCE, P. PAMPILI, M. PORTESINE, G. SOZZI, P.E. ZANI, High reliable high power diode for welding applications, ESREF'2004, 4-8 octobre 2004, ETH-Zurich, Switzerland, 4 pages.

[27] : Analysis and optimisation through innovative driving strategy of high power IGBT performances/EMI reduction trade-off for converter systems in railway applications
Pages : 1443-1448
Lien : vide.pdf - (998 K)

[28] : Reliability study of Power RF LDMOS for Radar Application
Pages : 1449-1454
Lien : vide.pdf - (921 K)

[29] : Experimental characterization of temperature distribution on Power MOS devices during Unclamped Inductive Switching
Pages : 1455-1459
Lien : vide.pdf - (852 K)

[30] : Comparison Between the Behaviour of Punch-Through and Non-Punch-Through Insulated Gate Bipolar Transistors Under High Temperature Reverse Bias Stress
Pages : 1461-1465
Lien : vide.pdf - (626 K)

[31] : Passivation schemes to improve power devices HAST robustness
Pages : 1467-1471
Lien : vide.pdf - (785 K)

[32] : Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination
Pages : 1473-1478
Lien : vide.pdf - (1357 K)

[33] : Compare of SOI and SOS LIGBT structure for the thermal conductivity and self-heating characteristics
Pages : 1479-1483
Lien : vide.pdf - (926 K)

[34] : Analysis of wire bond and metallization degradation mechanisms in DMOS power transistors stressed under thermal overload conditions
Pages : 1485-1490
Lien : vide.pdf - (1416 K)

[35] : Mie-Grüneisen Analysis of the Molecular Bonding States in Silica Which Impact Time-Dependent Dielectric Breakdown
Pages : 1491-1496
Lien : vide.pdf - (894 K)

[36] : Extraction of the trap distribution responsible for SILCs in MOS structures from the measurements and simulations of DC and noise properties
Pages : 1497-1501
Lien : vide.pdf - (580 K)

[37] : Plasma Charging Damage Reduction in IC Processing by A Self-balancing Interconnect
Pages : 1503-1507
Lien : vide.pdf - (659 K)

[38] : Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics
Pages : 1509-1512
Lien : vide.pdf - (775 K)

[39] : Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure
Pages : 1513-1518
Lien : vide.pdf - (636 K)

[40] : A new approach to the modeling of oxide breakdown on CMOS circuits
Pages : 1519-1522
Lien : vide.pdf - (436 K)

[41] : Standard and C-AFM tests to study the post-BD gate oxide conduction of MOS devices after current limited stresses
Pages : 1523-1528
Lien : vide.pdf - (705 K)

[42] : Implementation of TRE systems into Emission Microscopes
Pages : 1529-1534
Lien : vide.pdf - (1405 K)

[43] : Overcoming Fault Test Coverage with Time-Resolved Emission (TRE) Probing
Pages : 1535-1539
Lien : vide.pdf - (732 K)

[44] : New trends in the application of Scanning Probe Techniques in Failure Analysis
Pages : 1541-1546
Lien : vide.pdf - (1206 K)

[45] : Quantitative 3D reconstruction from BS imaging
Pages : 1547-1552
Lien : vide.pdf - (908 K)

[46] : Automated Diagnosis and Probing Flow for Fast Fault Localization in IC
Pages : 1553-1558
Lien : vide.pdf - (998 K)

[47] : Magnetic Microscopy for IC Failure Analysis: Comparative Case Studies using SQUID, GMR and MTJ systems
Pages : 1559-1563
Lien : vide.pdf - (1180 K)

[48] : Study on electrostatic discharge (ESD) reliability improvement of ZnO-based multilayered chip varistor(MLV)
Pages : 1565-1569
Lien : vide.pdf - (1073 K)

[49] : Fail / recover / fail (F/R/F) failure mechanisms new trend
Pages : 1571-1575
Lien : vide.pdf - (776 K)

[50] : Current crowding in faulty MOSFET: optical and electrical investigation
Pages : 1577-1581
Lien : vide.pdf - (896 K)

[51] : Gallium Artefacts on FIB-milled Silicon Samples
Pages : 1583-1588
Lien : vide.pdf - (1025 K)

[52] : VCO phase noise improvement through direct passive component modification in the FIB
Pages : 1589-1592
Lien : vide.pdf - (667 K)

[53] : Failure analysis of vertical cavity surface emission laser diodes
Pages : 1593-1597
Lien : vide.pdf - (1258 K)

[54] : Failure analysis of RFIC amplifiers
Pages : 1599-1604
Lien : vide.pdf - (869 K)

[55] : Femtosecond Laser Ablation for Backside Silicon Thinning
Pages : 1605-1609
Lien : vide.pdf - (1206 K)

[56] : A Novel Automatic Polishing Technique for Micro-Controllers with 45° off Si <100> Rotation
Pages : 1611-1614
Lien : vide.pdf - (869 K)

[57] : AFM-based scanning capacitance techniques for deep sub-micron semiconductor failure analysis
Pages : 1615-1619
Lien : vide.pdf - (984 K)

[58] : Evidence for source side injection hot carrier effects on lateral DMOS transistors
Pages : 1621-1624
Lien : vide.pdf - (631 K)

[59] : Locating hot carrier injection in n-type DeMOS transistors by Charge Pumping and 2D device simulations
Pages : 1625-1629
Lien : vide.pdf - (1152 K)

[60] : Effects of hot carrier and irradiation stresses on advanced excimer laser annealed polycrystalline silicon thin film transistors
Pages : 1631-1636
Lien : vide.pdf - (955 K)

[61] : Effects of hot carrier stress on the RF performance in SOI MOSFETs
Pages : 1637-1642
Lien : vide.pdf - (702 K)

[62] : On the defects introduced by AC and DC hot carrier stress in SOI PD MOSFETs
Pages : 1643-1647
Lien : vide.pdf - (499 K)

[63] : Reduced Hot Carrier Effects in Self-Aligned Ground-Plane FDSOI MOSFET’s
Pages : 1649-1654
Lien : vide.pdf - (779 K)

[64] : Time Resolved Photon Emission Processing Flow for IC Analysis
Pages : 1655-1662
Lien : vide.pdf - (1894 K)

[65] : Testing of Ultra Low Voltage VLSI Chips using the Superconducting Single-Photon Detector (SSPD)
Pages : 1663-1668
Lien : vide.pdf - (1908 K)

[66] : Interactive and non-destructive verification of sram-descrambling with laser
Pages : 1669-1674
Lien : vide.pdf - (1274 K)

[67] : Understanding the effects of NIR laser stimulation on NMOS transistor
Pages : 1675-1680
Lien : vide.pdf - (1632 K)

[68] : 2D Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Capacitance and Scanning Electron Microscopy
Pages : 1681-1686
Lien : vide.pdf - (1194 K)

[69] : Transient interferometric mapping of smart power SOI ESD protection devices under TLP and vf-TLP stress
Pages : 1687-1692
Lien : vide.pdf - (1441 K)

[70] : A laser-based instrument for measuring strain in electronic packages using coherent fibre-bundles
Pages : 1693-1697
Lien : vide.pdf - (1030 K)

[71] : Localization of FET Device Performance with Thermal Laser Stimulation
Pages : 1699-1702
Lien : vide.pdf - (805 K)

[72] : On the Use of Neural Networks to Solve the Reverse Modelling Problem for the Quantification of Dopant Profiles Extracted by Scanning Probe Microscopy Techniques
Pages : 1703-1708
Lien : vide.pdf - (855 K)

[73] : Investigation of SEU sensitivity of Xilinx Virtex II FPGA by pulsed laser fault injections
Pages : 1709-1714
Lien : vide.pdf - (1645 K)

[74] : Light Emission From Small Technologies. Are Silicon Based Detectors Reaching Their Limits?
Pages : 1715-1720
Lien : vide.pdf - (1253 K)

[75] : Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETs by 7.5-MeV proton irradiation
Pages : 1721-1726
Lien : vide.pdf - (951 K)

[76] : Reliability Evaluation and Redesign of LNA
Pages : 1727-1732
Lien : vide.pdf - (951 K)

[77] : Creep as a reliability problem in MEMS
Pages : 1733-1738
Lien : vide.pdf - (1683 K)

[78] : Impact of the space environmental conditions on the reliability of a MEMS COTS based system
Pages : 1739-1744
Lien : vide.pdf - (1733 K)

[79] : A new structure to monitor electrical transients during programming of EEPROM memory cells
Pages : 1745-1750
Lien : vide.pdf - (881 K)

[80] : Evaluation of STI degradation using temperature dependence of leakage current in parasitic STI MOSFET
Pages : 1751-1755
Lien : vide.pdf - (907 K)

[81] : Reliability determination of aluminium electrolytic capacitors by the mean of various methods. Application to the protection system of the LHC
Pages : 1757-1762
Lien : vide.pdf - (838 K)

[82] : Failure Analysis of RuO2 Thick Film Chip Resistors
Pages : 1763-1767
Lien : vide.pdf - (994 K)

[83] : First step in the reliability assessment of ultracapacitors used as power source in hybrid electric vehicles
Pages : 1769-1773
Lien : vide.pdf - (1034 K)

[84] : Experimental measurements and 3D simulation of the parasitic lateral bipolar transistor triggering within a single finger gg-nMOS under ESD
Pages : 1775-1780
Lien : vide.pdf - (1650 K)

[85] : Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications
Pages : 1781-1786
Lien : vide.pdf - (1268 K)

[86] : Electrostatic Effects on Semiconductor Tools
Pages : 1787-1792
Lien : vide.pdf - (1180 K)

[87] : Multiple-time-instant 2D thermal mapping during a single ESD event
Pages : 1793-1798
Lien : vide.pdf - (1363 K)

[88] : Study and validation of a power-rail ESD clamp in BiCMOS process with a reduced temperature dependency of its leakage current
Pages : 1799-1804
Lien : vide.pdf - (1681 K)

[89] : The Failure Analysis of High Voltage Tolerance IO Buffer under ESD
Pages : 1805-1810
Lien : vide.pdf - (839 K)

[90] : Study of the ESD defects impact on ICs reliability
Pages : 1811-1815
Lien : vide.pdf - (842 K)

[91] : The Impact of CMOS technology scaling on MOSFETs second breakdown: Evaluation of ESD robustness
Pages : 1817-1822
Lien : vide.pdf - (1025 K)

[92] : A case study of ESD failures at random levels: analysis, explanation and solution
Pages : 1823-1827
Lien : vide.pdf - (1081 K)

[93] : A study of an abnormal ESD failure mechanism and threshold voltage caused by ESD current zapping sequence
Pages : 1829-1834
Lien : vide.pdf - (1041 K)

[94] : Reliability Challenges with Ultra-Low k Interlevel Dielectrics
Pages : 1835-1841
Lien : vide.pdf - (1319 K)

[95] : Reliability Improvement in Al Metallization: A Combination of Statistical Prediction and Failure Analytical Methodology
Pages : 1843-1848
Lien : vide.pdf - (1101 K)

[96] : MTF test system with AC based dynamic joule correction for electromigration tests on interconnects
Pages : 1849-1854
Lien : vide.pdf - (821 K)

[97] : An improved isothermal electromigration test for Cu-damascene characterization
Pages : 1855-1860
Lien : vide.pdf - (732 K)

[98] : Time dependent dielectric breakdown in a low-k interlevel dielectric
Pages : 1861-1865
Lien : vide.pdf - (626 K)

[99] : Analysis of the layout impact on electric fields in interconnect structures using finite element method
Pages : 1867-1871
Lien : vide.pdf - (1115 K)

[100] : Characterization of self-heating effects in semiconductor resistors during transmission line pulses
Pages : 1873-1878
Lien : vide.pdf - (943 K)

[101] : Statistical simulation of gate dielectric wearout, leakage, and breakdown
Pages : 1879-1884
Lien : vide.pdf - (1294 K)

[102] : A CAD assisted design and optimisation methodology for over-voltage ESD protection circuits
Pages : 1885-1890
Lien : vide.pdf - (858 K)

[103] : Editorial • EDITORIAL
Pages : xi-xi
Mauro Ciappa and Wolfgang Fichtner
Lien : vide.pdf - - | Full Text + Links | Lien : vide.pdf - (203 K)

[104] : Author index • INDEX
Pages : I-III
Lien : vide.pdf - (200 K)

Mise à jour le lundi 10 avril 2023 à 18 h 56 - E-mail : thierry.lequeu@gmail.com
Cette page a été produite par le programme TXT2HTM.EXE, version 10.7.3 du 27 décembre 2018.

Copyright 2023 :

Les informations contenues dans cette page sont à usage strict de Thierry LEQUEU et ne doivent être utilisées ou copiées par un tiers.
Powered by www.google.fr, www.e-kart.fr, l'atelier d'Aurélie - Coiffure mixte et barbier, La Boutique Kit Elec Shop and www.lequeu.fr.