P. COVA, F. FANTINI, "On the effect of power cycling stress on IGBT modules", Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1347-1352.
Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP404]

Titre : P. COVA, F. FANTINI, On the effect of power cycling stress on IGBT modules, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1347-1352.

Cité dans :[REVUE253] Elsevier Science, Microelectronics Reliability, Volume 38, Issues 6-8, Pages 851-1366, 8 June 1998.
Cité dans : [DATA233] ESREF'98, Proceedings of the 9th European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis, 5-9 October 1998.
Cité dans : [DIV334]  Recherche sur les mots clés power cycling of power device, mai 2002.
Cité dans :[PAP409]
Cité dans :[PAP413]
Cité dans :[ART233]
Cité dans :[PAP401]
Auteur : P. Cova - University of Parma, Dipartimento di Ingegneria dell'Informazione, Viale delle Scienze 43100 Parma Italy
Auteur : F. Fantini - University of Modena, Dipartimento di Scienze dell'Ingegneria and INFM, via G. Campi, 213/b 41100 Modena Italy

Vers : Bibliographie
Lien : PAP409.HTM#Bibliographie - référence [3].
Lien : PAP413.HTM#Bibliographie - référence [5].
Lien : ART233.HTM#Bibliographie - référence [10].
Lien : PAP401.HTM#Bibliographie - référence [13].

Source : Microelectronics Reliability
Pages : 1347 - 1352
Volume : 38
Issues : 6-8
Date : 8 June 1998
Switches : IGBT
Lien : private/COVA1.pdf - 6 pages, 435 Ko.

Abstract :
IGBT reliability is becoming of great relevance, due to the range of application of these devices. Nevertheless, no standard test methods have been established, in order to evaluate their power cycling reliability. On this paper we report on the effect of delta T and Tjmax on the power cycling capability of IGBT dice, by means of a matrix of stress cycles with different values of delta T and Tjmax. Failure analysis has been performed, in order to understand the failure mechanisms induced by the stress.


Bibliographie

TOP

References : 10
[1] : Ohga K. Failure analysis of bonding wires in power transistor modules. Proc. ISTFA, 237-247, Los Angles, USA, 1991.
[2] : Malberti P, Ciappa M, Cattomio R. A power-cycling-induced failure mechanism of IGBT multichip modules. Proc. ISTFA, 163-168, Santa Clara, USA, 1995.
[3] : Sankaran V A, Chen C, Avant C S, Xu x. Power cycling reliability of IGBT power modules. IEEE Ind. Appl. Soc. Annual Meeting, New Or1eans, USA, 1997.
[4] : Franceschini G, Fantini F, Salini D, Bricca G, MuschitielIo M. Reliability evaluation of power SCR's. Proc. ESREF, 51-54, scwabisch Gmünd, Germany, 1992.
[5] : de Lambilly H, Keser H O. Failure analysis of power modules: a look at the packaging and reliability of large IGBTs. IEEE 'Irans. on CHMT , 16 (1993) 412-417.
[6] : Sommer K, Gottert J, Lefranc G, Spanke R. Multichip high power IGBT-modules for traction and industrial application. Proc. EPE, 1.112-1.116, Trondheim, Norway, 1997.
[7] : Hamidi A, Coquery G. Effect of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions. Microelectron. Reliab. 37 (1997) 1755-1758.
[8] : Baliga B J. Evolution of MOS-bipolar power semiconductor technology. Proc. of IEEE, 76 (1995) 409-418.
[9] : Baliga B J. Temperature behaviour of insulated gate transistor characteristics. Solid State Elect. 28 (1985) 289-297.
[10] : Cova P, Ciappa M, Franceschini G, Malberti P, Fantini F. Thermal characterization of IGBT power modules. Microelectron. Reliab. 37 (1997) 1731-1734.
  [1] :  [ART224]  K. OHGA, Failure analysis of bonding wires in power transistor modules, Proc. ISTFA, 237-247, Los Angles, USA, 1991.
  [2] :  [ART225]  P. MALBERTI, M. CIAPPA, R. CATTOMIO, A power-cycling-induced failure mechanism of IGBT multichip modules, Proc. ISTFA, 163-168, Santa Clara, USA, 1995.
  [3] :  [ART192]  V.A. SANKARAN, C. CHEN, C.S. AVANT, X. XU, Power cycling reliability of IGBT power modules, IAS Annual Meeting, 1997.
  [4] :  [PAP158]  -------
  [5] :  [PAP158]  -------
  [6] :  [ART221]  K. SOMMER, J. GOTTERT, G. LEFRANC, R. SPANKE, Multi-chip high-power IGBT modules for traction and industrial application, Proc. EPE' 97, Trondheim, Norway, September 22-24, pp. 512-515.
  [7] : [SHEET362] A. HAMIDI, G. COQUERY, R. LALLEMAND, Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions, Microelectronics and Reliability, vol. 37, no. 10-11, Oct-Nov, 1997, pp. 1755-1758.
  [8] :  [PAP158]  -------
  [9] :  [PAP158]  -------
 [10] :  [ART218]  P. COVA, M. CIAPPA, G. FRANCESCHINI, P. MALBERTI, F. FANTINI, Thermal characterization of IGBT power modules, Microelectronics Reliability, Vol. 37, Issues 10-11, October 1997, pp. 1731-1734.


Mise à jour le lundi 25 février 2019 à 15 h 34 - E-mail : thierry.lequeu@gmail.com
Cette page a été produite par le programme TXT2HTM.EXE, version 10.7.3 du 27 décembre 2018.

Copyright 2019 : TOP

Les informations contenues dans cette page sont à usage strict de Thierry LEQUEU et ne doivent être utilisées ou copiées par un tiers.
Powered by www.google.fr, www.e-kart.fr, l'atelier d'Aurélie - Coiffure mixte et barbier, La Boutique Kit Elec Shop and www.lequeu.fr.