Fiche : [DIV436]

Titre : Recherche sur l'auteur Martin COYAUD, juillet 2004.

Cité dans : [DIV096]  Recherches bibliographiques diverses, janvier 2019.

Vers : Recherche STN du mercredi 7 juillet 2004
Vers : Recherche IEEE du mardi 15 juin 2004

Recherche IEEE du mardi 15 juin 2004

1 Analytic modeling, optimization, and realization of cooling devices in silicon technology
Perret, C.; Boussey, J.; Schaeffer, C.; Coyaud, M.;
Components and Packaging Technologies, IEEE Transactions on [see also Components, Packaging and Manufacturing Technology, Part A: Packaging Technologies, IEEE Transactions on] ,Volume: 23 , Issue: 4 , Dec. 2000
Pages:665 - 672

2 Hybrid Si-SiC fast switching cell modelling and characterisation including parasitic environment description by PEEC method
Besacier, M.; Coyaud, M.; Schanen, J.L.; Roudet, J.; Rivet, B.;
Power Electronics Specialists Conference, 2002. pesc 02. 2002 IEEE 33rd Annual ,Volume: 4 , 23-27 June 2002
Pages:1753 - 1757

3 Power module integrated cooling design using CFD simulation
Karim, O.; Schaeffer, C.; Mallet, B.; Coyaud, M.; Gimet, E.;
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE ,Volume: 3 , 30 Sept.-4 Oct. 2001
Pages:1925 - 1930 vol.3

4 Performances of SiC Schottky rectifier in power factor correction
Coyaud, M.; Ferrieux, J.-P.; Schaeffer, C.; Collard, E.; Lhorte, A.; Quoirin, J.-B.;
Industry Applications Conference, 2001. Thirty-Sixth IAS Annual Meeting. Conference Record of the 2001 IEEE ,Volume: 1 , 30 Sept.-4 Oct. 2001
Pages:370 - 375 vol.1

  [1] :  [ART566]  C. PERRET, J. BOUSSEY, C. SCHAEFFER, M. COYAUD, Analytic modeling, optimization, and realization of cooling devices in silicon technology, IEEE Transactions on Components and Packaging Technologies, Vol. 23, No. 4 , December 2000, pp. 665-672.
  [2] :  [ART564]  M. BESACIER, M. COYAUD, J.-L. SCHANEN, J. ROUDET, B. RIVET, Hybrid Si-SiC fast switching cell modelling and characterisation including parasitic environment description by PEEC method, Power Electronics Specialists Conference 2002, Vol. 4 , 23-27 June 2
  [3] :  [ART565]  O. KARIM, C. SCHAEFFER, B. MALLET, M. COYAUD, E. GIMET, Power module integrated cooling design using CFD simulation, Industry Applications Conference, 2001, Thirty-Sixth IAS Annual Meeting, Vol. 3, 30 Sept.-4 Oct. 2001, pp. 1925-1930.
  [4] :  [ART562]  M. COYAUD, J.-P. FERRIEUX, C. SCHAEFFER, E. COLLARD, A. LHORTE, J.-B. QUOIRIN, Performances of SiC Schottky rectifier in power factor correction, Conference Record of the 2001 IEEE Industry Applications Conference, 2001, 36h IAS Annual Meeting, Chicago,

Recherche STN du mercredi 7 juillet 2004

Titres dans la banque de données COMPENDEX
1 : Hybrid Si-SiC fast switching cell modelling and characterisation including parasitic environment description by PEEC method.
2 : Power module integrated cooling design using CFD simulation.
3 : Performances of SiC Schottky rectifier in power factor correction.
4 : Analytic modeling, optimization, and realization of cooling devices in silicon technology.

Titres dans la banque de données INSPEC 5 Silicon carbide for power electronics.
6 : Hybrid Si-SiC fast switching cell modelling and characterisation including parasitic environment description by PEEC method.
7 : Power module integrated cooling design using CFD simulation.
8 : Performances of SiC Schottky rectifier in power factor correction.
9 : Analytic modeling, optimization, and realization of cooling devices in silicon technology.
10 : Analytic models, optimisation and realisation of cooling devices in silicon technology.

  [1] :  [ART564]  M. BESACIER, M. COYAUD, J.-L. SCHANEN, J. ROUDET, B. RIVET, Hybrid Si-SiC fast switching cell modelling and characterisation including parasitic environment description by PEEC method, Power Electronics Specialists Conference 2002, Vol. 4 , 23-27 June 2
  [2] :  [ART565]  O. KARIM, C. SCHAEFFER, B. MALLET, M. COYAUD, E. GIMET, Power module integrated cooling design using CFD simulation, Industry Applications Conference, 2001, Thirty-Sixth IAS Annual Meeting, Vol. 3, 30 Sept.-4 Oct. 2001, pp. 1925-1930.
  [3] :  [ART562]  M. COYAUD, J.-P. FERRIEUX, C. SCHAEFFER, E. COLLARD, A. LHORTE, J.-B. QUOIRIN, Performances of SiC Schottky rectifier in power factor correction, Conference Record of the 2001 IEEE Industry Applications Conference, 2001, 36h IAS Annual Meeting, Chicago,
  [4] :  [ART566]  C. PERRET, J. BOUSSEY, C. SCHAEFFER, M. COYAUD, Analytic modeling, optimization, and realization of cooling devices in silicon technology, IEEE Transactions on Components and Packaging Technologies, Vol. 23, No. 4 , December 2000, pp. 665-672.

  [5] :  [ART567]  G. VERNEAU, M. COYAUD, C. CREBIER, C. SCHAEFFER, Silicon carbide for power electronics, RGE, octobre 2003, pp. 34-38.
  [6] :  [ART564]  M. BESACIER, M. COYAUD, J.-L. SCHANEN, J. ROUDET, B. RIVET, Hybrid Si-SiC fast switching cell modelling and characterisation including parasitic environment description by PEEC method, Power Electronics Specialists Conference 2002, Vol. 4 , 23-27 June 2
  [7] :  [ART565]  O. KARIM, C. SCHAEFFER, B. MALLET, M. COYAUD, E. GIMET, Power module integrated cooling design using CFD simulation, Industry Applications Conference, 2001, Thirty-Sixth IAS Annual Meeting, Vol. 3, 30 Sept.-4 Oct. 2001, pp. 1925-1930.
  [8] :  [ART562]  M. COYAUD, J.-P. FERRIEUX, C. SCHAEFFER, E. COLLARD, A. LHORTE, J.-B. QUOIRIN, Performances of SiC Schottky rectifier in power factor correction, Conference Record of the 2001 IEEE Industry Applications Conference, 2001, 36h IAS Annual Meeting, Chicago,
  [9] :  [ART566]  C. PERRET, J. BOUSSEY, C. SCHAEFFER, M. COYAUD, Analytic modeling, optimization, and realization of cooling devices in silicon technology, IEEE Transactions on Components and Packaging Technologies, Vol. 23, No. 4 , December 2000, pp. 665-672.
 [10] :  [ART568]  C. PERRET, J. BOUSSEY, C. SCHAEFFER, M. COYAUD, Analytic models, optimisation and realisation of cooling devices in silicon technology, 1999.

Mais aussi :

  [1] : [REVUE213] Les clubs CRIN, La Lettre - Electronique de puissance, N° 15.
  [2] : [SHEET528] M. COYAUD, J.P. FERRIEUX, C. SCHAEFFER, E. COLLARD, A. LHORTE, J.B. QUOIRIN, Etude comparative de diodes rapides en Silicium et Carbure de Silicium, EPF'2000, pp. 177-181.

Classement par année

  [1] :  [ART568]  C. PERRET, J. BOUSSEY, C. SCHAEFFER, M. COYAUD, Analytic models, optimisation and realisation of cooling devices in silicon technology, 1999.

  [1] :  [ART566]  C. PERRET, J. BOUSSEY, C. SCHAEFFER, M. COYAUD, Analytic modeling, optimization, and realization of cooling devices in silicon technology, IEEE Transactions on Components and Packaging Technologies, Vol. 23, No. 4 , December 2000, pp. 665-672.

  [1] :  [ART565]  O. KARIM, C. SCHAEFFER, B. MALLET, M. COYAUD, E. GIMET, Power module integrated cooling design using CFD simulation, Industry Applications Conference, 2001, Thirty-Sixth IAS Annual Meeting, Vol. 3, 30 Sept.-4 Oct. 2001, pp. 1925-1930.
  [2] :  [ART562]  M. COYAUD, J.-P. FERRIEUX, C. SCHAEFFER, E. COLLARD, A. LHORTE, J.-B. QUOIRIN, Performances of SiC Schottky rectifier in power factor correction, Conference Record of the 2001 IEEE Industry Applications Conference, 2001, 36h IAS Annual Meeting, Chicago,

  [1] :  [ART564]  M. BESACIER, M. COYAUD, J.-L. SCHANEN, J. ROUDET, B. RIVET, Hybrid Si-SiC fast switching cell modelling and characterisation including parasitic environment description by PEEC method, Power Electronics Specialists Conference 2002, Vol. 4 , 23-27 June 2

  [1] :  [ART567]  G. VERNEAU, M. COYAUD, C. CREBIER, C. SCHAEFFER, Silicon carbide for power electronics, RGE, octobre 2003, pp. 34-38.

  [1] :  [ART583]  S. TEBBANI, E. GODOY, S. FONT, G. KALVELAGE, P. AUBIN, M. COYAUD, Stability analysis and control of a gain-varying converter using the Serial and Parallel Auto Regulated Configuration Topology, PESC'2004,

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