IRPS'1999, "1999 IEEE International Reliability Physics Symposium", San Diego.
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Titre : IRPS'1999, 1999 IEEE International Reliability Physics Symposium, San Diego.

Cité dans : [CONF024] IRPS, International Reliability Physics Symposium, août 2004.

No. : 37th
Date : 22-25 April, 1999
Lien : IRPS/IRPS1999/call1999.htm - call for paper
Lien : IRPS/IRPS1999/ap1999.pdf - 1999 IRPS Advance Program.
Lien : IRPS/IRPS1999/preprelm.htm - PRELIMINARY PROGRAM
Lien : IRPS/IRPS1999/Author99.htm - 1999 Author/Presenter Kit Information for reference

  [1] : [SHEET450] P.E. NICOLLIAN, M. RODDER, D.T. GRIDER, P. CHEN, R.M. WALLACE, S.V. HATTANGADY, Low voltage stress-induced-leakage-current in ultrathin gate oxides, IRPS'1999.
  [2] :  [PAP296]  E.Y. WU, W.W. ABADEER, H. LIANG-KAI, L. SHIN-HSIEN, G.R. HUECKEL, Challenges for accurate reliability projections in the ultra-thin oxide regime, IRPS 1999.


from R&D Electronic Library (septembre 2000)

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BIOGRAPHIES
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

1999 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM
PROCEEDINGS. 37TH ANNUAL (CAT. NO.99CH36296)
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

NEUGROSCHEL, A.; SAH, C.-T.
INTERCONNECT AND MOS TRANSISTOR DEGRADATION AT HIGH CURRENT
DENSITIES
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

OOMS, E.R.; VAN DER POL, J.A.
OCCURRENCE AND ELIMINATION OF ANOMALOUS TEMPERATURE DEPENDENCE
OF LATCHUP TRIGGER CURRENTS IN BICMOS PROCESSES
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

NIGAM, T.; DEGRAEVE, R.; GROESENEKEN, G.; HEYNS, M.M.; MAES,
H.E.
A FAST AND SIMPLE METHODOLOGY FOR LIFETIME PREDICTION OF
ULTRA-THIN OXIDES
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

NOTERMANS, G.; HERINGA, A.; VAN DORT, M.; JANSEN, S.; KUPER, F.
THE EFFECT OF SILICIDE ON ESD PERFORMANCE
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

WU, E.Y.; ABADEER, W.W.; LIANG-KAI HAN; SHIN-HSIEN LO; HUECKEL,
G.R.
CHALLENGES FOR ACCURATE RELIABILITY PROJECTIONS IN THE
ULTRA-THIN OXIDE REGIME
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

  [1] :  [PAP296]  E.Y. WU, W.W. ABADEER, H. LIANG-KAI, L. SHIN-HSIEN, G.R. HUECKEL, Challenges for accurate reliability projections in the ultra-thin oxide regime, IRPS 1999.

DE SALVO, B.; GHIBAUDO, G.; PANANAKAKIS, G.; GUILLAUMOT, B.;
CANDELIER, P.; REIMBOLD, G.
A NEW PHYSICAL MODEL FOR NVM DATA-RETENTION TIME-TO-FAILURE
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

HARTZELL, A.; WOODILLA, D.
RELIABILITY METHODOLOGY FOR PREDICTION OF MICROMACHINED
ACCELEROMETER STICTION
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

MITANI, Y.; SATAKE, H.; NAKASAKI, Y.; TORIUMI, A.
REEXAMINATION OF FLUORINE INCORPORATION INTO SIO/SUB
2/-SIGNIFICANT IMPROVEMENT OF CHARGE-TO-BREAKDOWN DISTRIBUTION
TAIL
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

AGARWAL, A.; ARNEY, S.; BARBER, B.P.; KOSINSKI, S.G.; LEGRANGE,
J.D.; RAJU, V.R.; RUEL, R.
LASER POWER MONITORING USING MEMS MICROMIRROR TECHNOLOGY
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

NICOLLIAN, P.E.; RODDER, M.; GRIDER, D.T.; CHEN, P.; WALLACE, R.M.; HATTANGADY, S.V.
LOW VOLTAGE STRESS-INDUCED-LEAKAGE-CURRENT IN ULTRATHIN GATE OXIDES
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL. 1999 IEEE INTERNATIONAL ( 1999 )

  [1] : [SHEET450] P.E. NICOLLIAN, M. RODDER, D.T. GRIDER, P. CHEN, R.M. WALLACE, S.V. HATTANGADY, Low voltage stress-induced-leakage-current in ultrathin gate oxides, IRPS'1999.

SHEN, Y.-L.
THERMAL STRESSES IN L AND T SHAPED METAL INTERCONNECTS: A THREE
DIMENSIONAL ANALYSIS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

SPECIALE, N.; SETTI, G.
FAILURES INDUCED ON BIPOLAR OPERATIONAL AMPLIFIERS FROM
ELECTROMAGNETIC INTERFERENCES CONDUCTED ON THE POWER SUPPLY
RAILS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

USUI, T.; WATANABE, T.; ITO, S.; HASUNUMA, M.; KAWAI, M.;
KANEKO, H.
SIGNIFICANT IMPROVEMENT IN ELECTROMIGRATION OF REFLOW-SPUTTERED
AL-0.5WT%CU/NB-LINER DUAL DAMASCENE INTERCONNECTS WITH LOW-K
ORGANIC SOG DIELECTRIC
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

WU, J.; REGISTER, L.F.; ROSENBAUM, E.
TRAP-ASSISTED TUNNELING CURRENT THROUGH ULTRA-THIN OXIDE
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

VERMEIRE, B.; PETERSON, C.A.; PARKS, H.G.; SARID, D.
THRESHOLD VOLTAGE SHIFT CAUSED BY COPPER CONTAMINATION
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

BREDERLOW, R.; WEBER, W.; SCHMITT-LANDSIEDEL, D.; THEWES, R.
HOT CARRIER DEGRADATION OF THE LOW FREQUENCY NOISE OF MOS
TRANSISTORS UNDER ANALOG OPERATING CONDITIONS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

CHEN, P.; WU, L.; ZHANG, G.; LIU, Z.
A UNIFIED COMPACT SCALABLE /SPL DELTA/I/SUB D/ MODEL FOR HOT
CARRIER RELIABILITY SIMULATION
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

LI, E.; ROSENBAUM, E.; TAO, J.; YEAP, G.C.-F.; LIN, M.-R.; FANG,
P.
HOT CARRIER EFFECTS IN NMOSFETS IN 0.1 /SPL MU/M CMOS TECHNOLOGY
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

ALERS, G.B.; WEIR, B.E.; FREI, M.R.; MONROE, D.
J-RAMP ON SUB-3 NM DIELECTRICS: NOISE AS A BREAKDOWN CRITERION
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

DAMMANN, M.; CHERTOUK, M.; JANTZ, W.; KOHLER, K.; SCHMIDT, K.H.;
WEIMANN, G.
RELIABILITY OF PASSIVATED 0.15 /SPL MU/M INALAS-INGAAS HEMTS
WITH PSEUDOMORPHIC CHANNEL
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

AMERASEKERA, A.; GUPTA, V.; VASANTH, K.; RAMASWAMY, S.
ANALYSIS OF SNAPBACK BEHAVIOR ON THE ESD CAPABILITY OF SUB-0.20
/SPL MU/M NMOS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

KIM, S.U.; CHO, T.; HO, P.S.
LEAKAGE CURRENT DEGRADATION AND CARRIER CONDUCTION MECHANISMS
FOR CU/BCB DAMASCENE PROCESS UNDER BIAS-TEMPERATURE STRESS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

POMPL, T.; WURZER, H.; KERBER, M.; WILKINS, R.C.W.; EISELE, I.
INFLUENCE OF SOFT BREAKDOWN ON NMOSFET DEVICE CHARACTERISTICS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

OHJI, Y.; IIJIMA, S.; SAITO, A.; MIKI, H.; KANAI, M.; KUNITOMO,
M.; YAMAMOTO, S.; FURUKAWA, R.; SUGAWARA, Y.; UEMURA, T.;
KURODA, J.; NAKATA, M.; KISU, T.; KAWAGOE, T.; KAWAKITA, K.;
HASEGAWA, M.; NAKAMURA, M.; KAJIGAYA, K.; HIDAKA, M.; YAMAMOTO,
H.; ASANO, I.; TAKEDA, E.
A STUDY OF TA/SUB 2/O/SUB 5//RUGGED SI CAPACITOR OF 23 /SPL
MU/C//SPL MU/M/SUP 2/ APPLIED TO HIGH-DENSITY DRAMS USING
SUB-0.2 /SPL MU/M PROCESS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

MCCUSKER, N.D.; GAMBLE, H.S.; ARMSTRONG, B.M.
SURFACE ELECTROMIGRATION IN COPPER INTERCONNECTS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

SHUTO, S.; KUNISHIMA, I.; TANAKA, S.
UV-BLOCKING TECHNOLOGY TO REDUCE PLASMA-INDUCED TRANSISTOR
DAMAGE IN FERROELECTRIC DEVICES WITH LOW HYDROGEN RESISTANCE
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

CHEUNG, K.P.; LIU, C.T.; CHANG, C.-P.; COLONELL, J.I.; LAI,
W.Y.-C.; LIU, R.; MINER, J.F.; PAI, C.S.; VAIDYA, H.; CLEMENS,
J.T.; HASEGAWA, E.
FIELD DEPENDENT CRITICAL TRAP DENSITY FOR THIN GATE OXIDE
BREAKDOWN
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

RANGAN, S.; KRISHNAN, S.; AMERASEKARA, A.; AUR, S.; ASHOK, S.
A MODEL FOR CHANNEL HOT CARRIER RELIABILITY DEGRADATION DUE TO
PLASMA DAMAGE IN MOS DEVICES
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

THEWES, R.; WALTER, G.H.; BREDERLOW, R.; SCHLUNDER, C.; VON
SCHWERIN, A.; JURK, R.; LINNENBANK, C.G.; LENGAUER, G.;
SCHMITT-LANDSIEDEL, D.; WEBER, W.
CHANNEL LENGTH DEPENDENCE OF HOT-CARRIER DEGRADATION OF
LATID-N-MOSFETS UNDER ANALOG OPERATION
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

VOLDMAN, S.; GAUTHIER, R.; MORRISSEAU, K.; HARGROVE, M.;
MCGAHAY, V.; GROSS, V.
HIGH-CURRENT CHARACTERIZATION OF DUAL-DAMASCENE COPPER
INTERCONNECTS IN SIO/SUB 2/- AND LOW-K INTERLEVEL DIELECTRICS
FOR ADVANCED CMOS SEMICONDUCTOR TECHNOLOGIES
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

KRISHNAN, A.T.; FONASH, S.J.
OFF-STATE STRESS-INDUCED REDUCTION OF OFF-STATE CURRENT IN
POLYCRYSTALLINE SILICON THIN FILM TRANSISTORS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

MARATHE, A.; BESSER, P.; TSIANG, J.; TRAN, K.; PHAM, V.; TRACY,
B.; FANG, P.
THE USE OF A WLR TECHNIQUE TO CHARACTERIZE VOIDING IN 0.25 AND
0.18 /SPL MU/M TECHNOLOGIES FOR INTEGRATED CIRCUITS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

QI, R.; THOMSON, D.J.; BRIDGES, G.E.
BACKSIDE PROBING OF FLIP-CHIP CIRCUITS USING ELECTROSTATIC FORCE
SAMPLING
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

MERGENS, M.; WILKENING, W.; METTLER, S.; WOLF, H.; FICHTNER, W.
MODULAR APPROACH OF A HIGH CURRENT MOS COMPACT MODEL FOR
CIRCUIT-LEVEL ESD SIMULATION INCLUDING TRANSIENT GATE COUPLING
BEHAVIOR
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

SHIMOYAMA, N.; MACHIDA, K.; SHIMAYA, M.; KOIZUMI, H.; KYURAGI,
H.
THE INFLUENCE OF STUD BUMPING STRESS ON DEVICE DEGRADATION IN
SCALED MOSFETS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

CHUNG, S.S.; CHEN, S.J.; YIH, C.M.; YANG, W.J.; CHAO, T.S.
AN ACCURATE HOT CARRIER RELIABILITY MONITOR FOR DEEP-SUBMICRON
SHALLOW S/D JUNCTION THIN GATE OXIDE N-MOSFETS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

LU, Q.; CHEUNG, K.P.; CIAMPA, N.A.; LIU, C.T.; CHANG, C.-P.;
COLONELL, J.I.; LAI, W.-Y.-C.; LIU, R.; MINER, J.F.; VAIDYA, H.;
PAI, C.-S.; CLEMENS, J.T.
A MODEL OF THE STRESS TIME DEPENDENCE OF SILC
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

FUKAI, Y.K.; YAMASAKI, K.; NISHIMURA, K.
THRESHOLD VOLTAGE SHIFT IN 0.1 /SPL MU/M SELF-ALIGNED-GATE GAAS
MESFETS UNDER BIAS STRESS AND RELATED DEGRADATION OF
ULTRA-HIGH-SPEED DIGITAL ICS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

NAWAZ, M.; STRUPINSKI, W.; STENARSON, J.; PERSSON, S.H.M.;
ZIRATH, H.
RELIABILITY EVALUATION OF MOCVD GROWN ALINAS-GAINAS-INP HEMTS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

LEE, W.; LEE, S.; AHN, T.; HWANG, H.
DEGRADATION OF HOT CARRIER LIFETIME FOR NARROW WIDTH MOSFET WITH
SHALLOW TRENCH ISOLATION
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

BANERJEE, K.; WU, G.; IGETA, M.; AMERASEKERA, A.; MAJUMDAR, A.;
HU, C.
INVESTIGATION OF SELF-HEATING PHENOMENON IN SMALL GEOMETRY VIAS
USING SCANNING JOULE EXPANSION MICROSCOPY
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

ARNAUD, L.; TARTAVEL, G.; BERGER, T.; MARIOLLE, D.; GOBIL, Y.;
TOUET, I.
MICROSTRUCTURE AND ELECTROMIGRATION IN COPPER DAMASCENE LINES
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

FOLEY, S.; FLOYD, L.; MATHEWSON, A.
A NOVEL FAST TECHNIQUE FOR DETECTING VOIDING DAMAGE IN IC
INTERCONNECTS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

GADDI, R.; MENOZZI, R.; DIECI, D.; LANZIERI, C.; MENEGHESSO, G.;
CANALI, C.; ZANONI, E.
BULK AND SURFACE EFFECTS OF HYDROGEN TREATMENT ON AL/TI-GATE
ALGAAS-GAAS POWER HFETS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

CHENMING HU; QIANG LU
A UNIFIED GATE OXIDE RELIABILITY MODEL
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

WALLACE, B.; LEE, Y.-H.; PANTUSO, D.; WU, K.; MIELKE, N.
THERMO-MECHANICAL STRESS INDUCED VOIDING IN A TUNGSTEN-ALCU
INTERCONNECT SYSTEM
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

DOAN, J.C.; BRAVMAN, J.C.; FLINN, P.A.; MARIEB, T.N.
THE RELATIONSHIP BETWEEN RESISTANCE CHANGES AND VOID VOLUME
CHANGES IN PASSIVATED ALUMINUM INTERCONNECTS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

YALAMANCHILI, P.; BALTAZAR, V.
FILLER INDUCED METAL CRUSH FAILURE MECHANISM IN PLASTIC
ENCAPSULATED DEVICES
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

TERAMOTO, A.; UMEDA, H.; AZAMAWARI, K.; KOBAYASHI, K.; SHIGA,
K.; KOMORI, J.; OHNO, Y.; MIYOSHI, H.
STUDY OF OXIDE BREAKDOWN UNDER VERY LOW ELECTRIC FIELD
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

SCARPULLA, J.; ENG, D.C.; OLSON, S.R.; WU, C.-S.
A TDDB MODEL OF SI/SUB 3/N/SUB 4/-BASED CAPACITORS IN GAAS MMICS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

GHIDINI, G.; BRAZZELLI, D.; CLEMENTI, C.; PELLIZZER, F.
CHARGE TRAPPING MECHANISM UNDER DYNAMIC STRESS AND ITS EFFECT ON
FAILURE TIME [GATE OXIDES]
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

HUNTER, W.R.
THE STATISTICAL DEPENDENCE OF OXIDE FAILURE RATES ON V/SUB DD/
AND T/SUB OX/ VARIATIONS, WITH APPLICATIONS TO PROCESS DESIGN,
CIRCUIT DESIGN, AND END USE
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

LIE, D.Y.C.; YOTA, J.; XIA, W.; JOSHI, A.B.; WILLIAMS, R.A.;
ZWINGMAN, R.; CHUNG, L.; KWONG, D.L.
NEW EXPERIMENTAL FINDINGS ON PROCESS-INDUCED HOT-CARRIER
DEGRADATION OF DEEP-SUBMICRON N-MOSFETS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

TANNER, D.M.; WALRAVEN, J.A.; IRWIN, L.W.; DUGGER, M.T.; SMITH,
N.F.; EATON, W.P.; MILLER, W.M.; MILLER, S.L.
THE EFFECT OF HUMIDITY ON THE RELIABILITY OF A SURFACE
MICROMACHINED MICROENGINE
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

NXUMALO, J.N.; TRAN, T.; LI, Y.; THOMSON, D.J.
TWO-DIMENSIONAL CARRIER PROFILING OF A 0.4 /SPL MU/M CMOS DEVICE
BY SCHOTTKY SCM
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

LEE, J.H.; PENG, K.R.; SHIH, J.R.; CHEN, S.H.; YEH, J.K.; SU,
H.D.; HO, M.C.; KUO, D.S.; LIEW, B.K.; SUN, J.Y.C.
USING ERASE SELF-DETRAPPED EFFECT TO ELIMINATE THE FLASH CELL
PROGRAM/ERASE CYCLING V/SUB TH/ WINDOW CLOSE
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

LISENKER, B.; MITNICK, Y.
FAULT MODEL FOR VLSI CIRCUITS RELIABILITY ASSESSMENT
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

ZOUS, N.-K.; WANG, T.; YEH, C.-C.; TSAI, C.-W.; HUANG, C.
A COMPARATIVE STUDY OF SILC TRANSIENT CHARACTERISTICS AND
MECHANISMS IN FN STRESSED AND HOT HOLE STRESSED TUNNEL OXIDES
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

HARRIS, M.; WAGNER, B.; HALPERN, S.; DOBBS, M.; PAGEL, C.;
STUFFLE, B.; HENDERSON, J.; JOHNSON, K.
FULL TWO-DIMENSIONAL ELECTROLUMINESCENT (EL) ANALYSIS OF
GAAS-ALGAAS HBTS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

KORHONEN, M.A.; KORHONEN, T.M.; BROWN, D.D.; LI, C.-Y.
SIMULATION OF ELECTROMIGRATION DAMAGE IN CHIP LEVEL INTERCONNECT
LINES: A GRAIN STRUCTURE BASED STATISTICAL APPROACH
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

PANTISANO, L.; PACCAGNELLA, A.; BARBAZZA, M.; COLOMBO, P.;
VALENTINI, M.G.
A NEW EXPERIMENTAL APPROACH TO EVALUATE PLASMA DAMAGE IN NMOS
AND PMOS DEVICES
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

RIORDAN, W.C.; MILLER, R.; SHERMAN, J.M.; HICKS, J.
MICROPROCESSOR RELIABILITY PERFORMANCE AS A FUNCTION OF DIE
LOCATION FOR A 0.25 /SPL MU/, FIVE LAYER METAL CMOS LOGIC
PROCESS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

PATTON, S.T.; COWAN, W.D.; ZABINSKI, J.S.
PERFORMANCE AND RELIABILITY OF A NEW MEMS ELECTROSTATIC LATERAL
OUTPUT MOTOR
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

GORUGANTHU, R.R.; BRUCE, M.; BIRDSLEY, J.; BRUCE, V.;
GILFEATHER, G.; RING, R.; ANTONIOU, N.; SALEN, J.; THOMPSON, M.
CONTROLLED SILICON THINNING FOR DESIGN DEBUG OF C4 PACKAGED ICS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )

PIETILA, D.A.; RASSAIAN, M.; BRICE-HEAMES, K.
DESIGN CHARACTERIZATION OF MICROWAVE ANTENNA BGA INTERCONNECT
STRUCTURE USING TEST-VALIDATED PHYSICS-OF-FAILURE METHODS
RELIABILITY PHYSICS SYMPOSIUM PROCEEDINGS, 1999. 37TH ANNUAL.
1999 IEEE INTERNATIONAL ( 1999 )


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