S. AZZOPARDI, M. TRIVEDI, C. ZARDINI, K. SHENAI, "Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT", Solid-State Electronics, Volume 44, Issues 11, , pp. .
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Article : [ART552]

Titre : S. AZZOPARDI, M. TRIVEDI, C. ZARDINI, K. SHENAI, Non-destructive extraction of technological parameters for numerical simulation of conventional planar punch-through IGBT, Solid-State Electronics, Volume 44, Issues 11, , pp. .


Auteur : S. Azzopardi (a)

Auteur : M. Trivedi (b)

Auteur : C. Zardini (a)

Auteur : K. Shenai (b)





Vers : Bibliographie

Adresse : 

Adresse : 

Adresse : 

Tel. : +312-355-1305

Fax. : +312-996-0763

Lien : mailto:trivedi@prospero.eecs.uic.edu 

Source : Solid-State Electronics

Volume : 44

Issues : 11

Date : 

Pages : 

DOI : 

PII : 

Lien : private/AZZOPARDI4.pdf - 251 Ko, 10 pages.

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Puissance : 

Logiciel : 

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Abstract : 

Two dimensional (2D) physics-based simulation of power semiconductor devices

provides valuable information about the dynamic mechanisms within the devices,

thus improving the understanding of device performance in various applications.

Numerical simulation requires several technological parameters such as doping,

dimensions of various regions and carrier lifetime. Destructive methods are

available, but they are quite expensive and require sophisticated equipment.

This article describes an original non-destructive technological parameter

extraction methodology for conventional planar punch-through (PT) insulated gate

bipolar transistor (IGBT) based on simple electrical measurements to obtain an

equivalent physics-based model of the real device. To verify the accuracy of

these extracted parameters, a 2D PT-IGBT structure is implemented in a

physics-based finite element simulator. A good match between simulated and

experimental results validates this methodology.

Author Keywords: Punch-through insulated gate bipolar transistor; Technological

parameters; Non-destructive extraction method; Device modeling; Electro-thermal

device simulation 









Article Outline 

Nomenclature  

1. Introduction 

2. Two-dimensional device simulator

3. Device physical parameters

4. Electrical measurements on planar PT-IGBT

4.1. Breakdown voltage measurement

4.1.1. Reverse blocking voltage

4.1.2. Forward blocking voltage

4.2. Threshold voltage measurement

4.3. Output characteristics

4.4. Hard-switching measurements

4.5. Influence of temperature

5. Extraction method validation

6. Discussion and conclusion






Bibliographie
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Références : 13

[1] : Trivedi M, Shenai K. Mixed-mode simulation for power system optimization. IEEE Int Conf Microelectron (MIEL). 1997. p. 451–8.

[2] : Tsunoda T, et al. Improved 600 and 1200 V IGBT with low turn-off loss and high ruggedness. IEEE Power Electron Spec Conf (PESC). 1990. p. 9–16.

[3] : Laska T, Fugger J, Hirler F, Scholz W. Optimizing the vertical IGBT structure – the NPT concept as the most economic and electrically ideal solution for a 1200 V IGBT. IEEE Int Symp Power Semiconductor Dev ICs (ISPSD). 1996. p. 169–72.

[4] : ATLAS Users Manual, Silvaco International, Santa Clara, CA, 1998.

[5] : S.M. Sze. Physics of semiconductor devices (2nd ed ed.),, Wiley, New York (1981)

[6] : MIXEDMODE Users Manual, Silvaco International, Santa Clara, CA, 1998.

[7] : S. Pendharkar and K. Shenai, Evaluation of turn-on performance of P-i-N rectifiers and IGBTs under zero voltage switching. IEEE Trans Electron Devices 43 4 (1996), pp. 647–654.

[8] : M. Trivedi and K. Shenai, Switching characteristics of MCTs and IGBTs in power converters. IEEE Trans Electron Devices 43 11 (1996), pp. 1994–2003.

[9] : Calmon F. Participation à l'étude du comportement électrothermique des IGBT. PhD Thesis, 95 INSAL 0055, 1995.

[10] : P. Perugupalli, M. Trivedi, K. Shenai and S.K. Leong, Characterization and modeling of an 80 V silicon LDMOSFET for emerging RFIC applications. IEEE Trans Electron Devices 45 7 (1998), pp. 1468–1478.

[11] : B.J. Baliga. Power semiconductor devices, PWS Publishing Company, USA (1996)

[12] : D.K. Schröder. Semiconductor material and device characterization, Wiley, New York (1990).

[13] : Azzopardi S, Jamet C, Vinassa JM, Zardini C. Dynamics behavior of punch-through IGBT in hard-switching converters at high temperature. Eur Power Electron Conf (EPE) Proc 1997;4:1–6.






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