Z. KHATIR, S. LEFEBVRE, "Boundary element analysis of thermal fatigue effects on high power IGBT modules", Microelectronics Reliability, Vol. 44, No. 6, pp. 889-1029, June 2004.
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Titre : Z. KHATIR, S. LEFEBVRE, Boundary element analysis of thermal fatigue effects on high power IGBT modules, Microelectronics Reliability, Vol. 44, No. 6, pp. 889-1029, June 2004.

Cité dans : [DATA197] Les revues Microelectronics Reliability et Microelectronics Journal, ELSEVIER, décembre 2004.
Cité dans :[REVUE520] Elsevier Science, Microelectronics Reliability, Volume 44, Issue 6, Pages 889-1029, June 2004.
Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France.
Auteur : Z. Khatir
Auteur : S. Lefebvre

Vers : Bibliographie
Abresse : (a) The French National Institute for Transport and Safety Research, Laboratory of New Technologies, INRETS, 2, Av. du général Malleret-Joinville, F-94114, Arcueil Cedex, France.
Adresse : (b) SATIE-ENS de Cachan, 61, Av. du président Wilson, F-94235, Cachan, France.
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Source : Microelectronics Reliability
Volume : 44
Issues : 6
Date : June 2004
Pages : 889 - 1029
DOI :
PII :
Lien : private/KHATIR1.pdf - 678 Ko, 10 pages.
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Abstract :
The technology of high power IGBT modules has been significantly improved these last years against thermal fatigue. The most frequently observed failure modes, due to thermal fatigue, are the solder cracks between the copper base plate and the direct copper bonding (DCB) substrate and bond wire lift-off. Specific simulation tools are needed to carry out reliability researches and to develop device lifetime models. In other respects, accurate temperature and flux distributions are essential when computing thermo-mechanical stresses in order to assess the lifetime of high power modules in real operating conditions.
This study presents an analysis method based on the boundary element method (BEM) to investigate thermal behavior of high power semiconductor packages subjected to power cycling loads. The paper describes the boundary integral equation which has been solved using the BEM and applied to the case of a high power IGBT module package (3.3 kV–1.2 kA).
A validation of the numerical tool is presented by comparison with experimental measurements. Finally, the paper points out the effect on the thermal stress of the IGBT chips position on the DCB substrate. In particular, a light shifting of the silicon chips may be sufficient to delay significantly the initiation and the propagation of the cracks, allowing a higher device lifetime of the studied module.

Article Outline
1. Introduction
2. The problem statement
3. BEM formulation
4. Experimental validations
5. Effect of IGBT chip position on the DCB attach delamination for copper base plate module
6. Conclusion
Appendix A


Bibliographie

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References : 15
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