B.K. BOSE, "Evaluation of modern power semiconductor devices and future trend of converters", Industry Applications Society Annual Meeting, 1-5 Oct. 1989, vol. 1, pp. 790-797.
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Article : [99ART122]

Titre : B.K. BOSE, Evaluation of modern power semiconductor devices and future trend of converters, Industry Applications Society Annual Meeting, 1-5 Oct. 1989, vol. 1, pp. 790-797.

Cité dans :[99DIV014] Recherche sur l'auteur Bimal K. BOSE, 1999.
Cité dans : [DIV398]  Les revues IEEE Transactions on Industry Applications et IEEE Industry Applications Society - IAS, novembre 2005.
Cité dans :[SHEET069] B.K. BOSE, Evolution of power semiconductor devices in the modern era and trend of converters, Journal of the Institution of Electronics and Telecommunication Engineers , January-February 1991, vol. 37, no. 1, pp. 3-16.
Cité dans :[SHEET124] B.K. BOSE, Evaluation of modern power semiconductor devices and future trends of converters, IEEE Transactions on Industry Applications, pp. 403-413, vol. 28, no. 2, March-April 1992.
Auteur : B.K. Bose, Dept. of Electr. Eng., Tennessee Univ., Knoxville, TN, USA

Source : in Industry Applications Society Annual Meeting, 1989., Conference Record of the 1989 IEEE
Page : 790 - 797 vol.1
Date : 1-5 Oct. 1989
Info : Total Pages: 2 vol. 2418
Stockage : Thierry LEQUEU
Lien : private/BOSE5.pdf - 728 Ko, 8 pages, Ref: 96737.

Abstract :
A review of the modern power semiconductor devices that appeared
in the 1980s, i.e., the insulated gate bipolar transistor (IGBT),
the static induction transistor (SIT), the static induction
thyristor (SITH), and the MOS-controlled thyristor (MCT) is
presented. The characteristics of these devices are discussed and
compared from the viewpoint of power electronics applications.
Although the IGBT is well known, the power electronics community
is somewhat unfamiliar with the latter three devices. For
completeness, a brief review of other power devices, such as the
thyristor, the triac, the gate turnoff thyristor (GTO), the
bipolar junction transistor (BJT), and the power MOSFET, is also
incorporated. Finally, future converter trends are outlined.

Subjet_terms :
power convertors; power semiconductor devices; insulated gate
bipolar transistor; IGBT; static induction transistor; SIT;
static induction thyristor; SITH; MOS-controlled thyristor; MCT;
characteristics; thyristor; triac; gate turnoff thyristor; GTO;
bipolar junction transistor; BJT; power MOSFET; bipolar
transistors; insulated gate field effect transistors; power
convertors; power transistors; thyristor applications; thyristors

Reference_cited : 32
Accession_Number : 3613366


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