S.H. LARRY TU, B.J. BALIGA, "Optimization of the MPS rectifier via variation of Schottky region area", ISPSD'91, pp. 109-112, 1991.
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Titre : S.H. LARRY TU, B.J. BALIGA, Optimization of the MPS rectifier via variation of Schottky region area, ISPSD'91, pp. 109-112, 1991.

Cité dans :[PAP003]
Cité dans :[99DIV104] Recherche sur l'auteur B. JAYANT BALIGA, juin 2001.
Cité dans : [DATA041] Conférence ISPSD'91, Third Internationnal Symposium on Power Semiconductor Devices & ICs, Baltimore MD, April 22-24 1991.
Auteurs : Tu, S.H.L.
Auteur : Baliga, B.J.
Editors : Shibib, M.A., Baliga, B.J. Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA.

Appears : Power Semiconductor Devices and ICs, 1991. ISPSD '91., Proceedings of the 3rd International Symposium on
Page : 109 - 112
Date : 22-24 April 1991
ISBN : 0-7803-0009-2, Total Pages: viii+260, Accession Number : 4155047
Stockage : Thierry LEQUEU
Lien : private/BALIGA2.pdf - 4 pages, 280 Ko.

Abstract :
The authors discuss the optimization of the switching characteristics of the MPS (merged PIN/Schottky) rectifier by
varying the relative area of the P-N junction and Schottky regions. Extensive two-dimensional numerical simulations have
been performed of the forward condition and reverse recovery switching characteristics. It has been found that a trade-off
curve between the forward voltage drop and the reverse recovery time can be obtained by varying the area of the Schottky region,
while maintaining a constant minority carrier lifetime. This trade-off curve is superior to that obtained for the PIN
rectifier using lifetime control. Experimental data that corroborate this theoretical prediction have been obtained by
fabrication of 700 V devices. This method of performing the trade-off between the forward drop and the turn-off time has the
advantage that it can be done by device design without the problems and additional processing cost associated with lifetime

Subjet_terms :
merged PIN/Schottky rectifier; turnoff time; p-n junction area variation; Schottky region area variation; MPS rectifier;
switching characteristics; two-dimensional numerical simulations; forward condition; reverse recovery switching;
forward voltage drop; reverse recovery time; constant minority carrier lifetime; 700 V; p-i-n diodes;
Schottky-barrier diodes; semiconductor device models; solid-state rectifiers; switching

Reference_cited : 8

  [1] : [LIVRE157] B.J. BALIGA, Modern Power Devices, édition John Wiley & Sons, 1987.
  [2] :  [PAP157]  Référence non disponible.
  [3] :  [PAP157]  Référence non disponible.
  [4] :  [PAP157]  Référence non disponible.
  [5] :  [PAP157]  Référence non disponible.
  [6] :  [PAP157]  Référence non disponible.
  [7] :  [PAP157]  Référence non disponible.
  [8] :  [PAP157]  Référence non disponible.

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