"Au-In bonding below the eutectic temperature.
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Article : [TRIAC088]

Info : REPONSE 123, le 04/02/2002.

Titre : Au-In bonding below the eutectic temperature.

Cité dans : [DIV333]  Recherche sur les mots clés thermal + shock + liquid , février 2002.
Auteur : Lee, Chin C. (Univ of California, Irvine, CA, USA)
Auteur : Wang, Chen Y.

Source : IEEE Transactions on Components, Hybrids and Manufacturing Technology
v 16 n 3 May 1993.p 311-316
ISSN : 0148-6411
Année : 1993
Document_Type : Journal
Treatment_Code : Application; General Review
Language : English
Stockage :

Abstract :
A bonding method using Au-In alloy is reported which requires a low
process temperature of 200 degree C to produce high temperature (454
degree C) bonds.Multiple layers of Au and In are deposited on
semiconductor wafers in one vacuum cycle to reduce indium oxidation.The
semiconductor dice are then bonded to substrates coated with Au.Above 157
degree C, the indium layer melts and dissolves the gold layers to form a
mixture of liquid and solid. The solid-liquid interdiffusion process
continues until the mixtures solidifies to form the Au-In bond.A scanning
acoustic microscope (SAM) was used to determine the excellent bonding
quality before and after thermal shock tests while an energy dispersive
x-ray (EDX) was employed to determine the composition of the resulting
bonds.The resulting bond has an unbonding temperature greater than 545
degree C.Due to the low process temperature, the stress on the bonded
structure caused by thermal expansion mismatch is reduced.This type of
bonding is useful when bonding at a low temperature is followed by a
subsequent higher temperature process.(Author abstract) 29 Refs.

Accession_Number : 1994(5):408 COMPENDEX

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