"Increasing frequency using GTO in gate-assisted-turn-off mode.
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Article : [SHEET364]

Info : COMPENDEX Answer Number 4, le 19/06/2000.

Titre : Increasing frequency using GTO in gate-assisted-turn-off mode.

Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France.
Auteur : Pascal, J.P. (INRETS, Fr)
Auteur : Coquery, G.
Auteur : Lallemand, R

Meeting : Third International Conference on Power Electronics and Variable-Speed Drives.
Location : London, Engl
Date : 13 Jul 1988-15 Jul 1988
Info : organization : IEE, Power Div, London, Engl; Inst of Electrical Engineers of Japan, Jpn; IEEE, Industry Applications Soc, New York, NY, USA; IEEE, Industrial Electronics Soc, New York, NY, USA; Inst of Engineers of Ireland, Irel; et al
Location : London, Engl
Date : 13 Jul 1988-15 Jul 1988
Source : IEE Conference Publication n 291.Publ by IEE, London, Engl.p 87-90
CODEN : IECPB4
Année : 1988
Meeting_Number : 12156
Document_Type : Conference Article
Treatment_Code : Application; Experimental
Language : English
Stockage :

Abstract :
To increase frequency, many authors emphasize advantages of using
the highly interdigited GTO's structure in the Gate Assisted mode of
operation of thyristors (GAT mode), i.e., with forced communication,
when both fast turn-off time (tq) of asymmetrical thyristors and
communication losses (Woff) of GTO become critical. A practical
problem has been experienced with the aim of 25kHz, 500V, 230A
application which is over capabilities of GAT thyristors (such as
CA386P2, asymmetrical thyristor from GE with tq equals 8 mu s) and
those of usual GTO.Four different GAT mode circuits (A, B, D, E),
using the same 2 mu F capacitor as that used for the GTO mode,
allowing approximately 4 mu s tq, have been tested and results have
been compared to the losses of the GTO mode and of a thyristor mode
(tq equals 8 mu s).

References : 9 Refs.

Accession_Number : 1989(7):67843


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