I.L. SOMOS, L.O. ERIKSSON, W.H. TOBIN, "Establishing conditions for a meaningful di/dt test for thyristors", Proceedings of the Tenth International PCI '85 Conference, Chicago, Oct. 19855, pp. 113-121.
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Article : [SHEET232]

Info : COMPENDEX Answer Number 8, le 16/03/2000.

Titre : I.L. SOMOS, L.O. ERIKSSON, W.H. TOBIN, Establishing conditions for a meaningful di/dt test for thyristors, Proceedings of the Tenth International PCI '85 Conference, Chicago, Oct. 19855, pp. 113-121.

Cité dans : [DATA042] Recherche sur l'auteur Istvan SOMOS, mars 2000.
Cité dans : [CONF045] PCI, Power Conversion International, Publ by Intertec Communications, Ventura, CA, USA.
Auteur : Somos, I.L. (Somos Electra, Lansdowne, PA, USA)
Auteur : Eriksson, L.O.
Auteur : Tobin, W.H

Meeting : Official Proceedings of the Tenth International PCI '85 Conference.
Location : Chicago, IL, USA
Date : 22 Oct 1985-25 Oct 1985
Source : Proceedings of the Annual International PCI Conference (Power Conversion International) Publ by Intertec Communications, Ventura, CA, USA.
Pages : 113 - 121
CODEN : PAICED
Année : 1985
Meeting_Number : 07420
Document_Type : Conference Article
Language : English
Stockage : Thierry LEQUEU

Abstract :
When turning on a thyristor, the di/dt capability depends on the
thermal excursion (called 'hammering') and the anticipated number that can
be withstood before fatigue sets in and ultimate failure occurs.A suitable
way for specifying di/dt would be the publication of a family of curves,
'Number of applications (life) vs di/dt' with the peak current as the
running parameter.Neither the 5 second (non-repetitive rating) nor the
1000 hours (repetitive rating) verification tests are suitable for
satisfying the design requirements of an engineer who has a different
current peak than the standard.Ratings can be verified only by an
accelerated life test using a current waveform of a multiple 'f' times the
anticipated turn-on stress.As a simplification and a safety factor, 'f'
times stress can be represented by 'f' times current.Thermal runaway is
avoided by using low frequency and case temperature; justified since life
expectancy is a function of thermal excursion rather than temperature.Life
is then calculated by an acceleration which in turn is a function of the
factor 'f'.Recommendations for di/dt testing and publishing of ratings are
discussed in this paper. (Edited author abstract)

Accession_Number : 1986(5):71284

Références : 8 refs.

  [1] :  [PAP159]  ...
  [2] : [LIVRE102] GENERAL ELECTRICS, SCR manual including triacs and other thyristors, sixth edition, 1979.
  [3] : [SHEET229] D.E. PICCONE, I.S. SOMOS, Are you confused by high di/dt SCR ratings?, Electronic Engineer, Jan. 1969, vol. 28, no. 1, pp. 89-92.
  [4] : [SHEET205] D.E. PICCONE, I.L. SOMOS, Accelerated life tests for determining the life expectancy of thyristors due to di/dt failure modes, IEEE Industry Applications Society 1972 Conference Record, pp. 89-92.
  [5] :  [PAP159]  ...
  [6] : [SHEET235] I.L. SOMOS, D.E. PICCONE, Temperature excursion in thyristors due to short current pulses during forward conduction and reverse recovery phase, IAS, 1974.
  [7] : [SHEET195] D.E. PICCONE, I.L. SOMOS, W.H. TOBIN, Piecewise Simulation (PS) Computation Method for Computing Transient Phenomena, IEEE-IAS Annual Meeting, September 1975, pp. 326-331.


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