A. HAMIDI, G. COQUERY, R. LALLEMAND, P. VALES, J.M. DORKEL, "Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications", Microelectronics and Reliability, vol. 38, no. 6-8, J

A. HAMIDI, G. COQUERY, R. LALLEMAND, P. VALES, J.M. DORKEL, "Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications", Microelectronics and Reliability, vol. 38, no. 6-8, J Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET140]

Info : COMPENDEX Numéro de réponse 31 - 22/02/2000

Titre : A. HAMIDI, G. COQUERY, R. LALLEMAND, P. VALES, J.M. DORKEL, Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications, Microelectronics and Reliability, vol. 38, no. 6-8, Jun-Aug 1998, pp. 1353-1359.

Cité dans :[REVUE253] Elsevier Science, Microelectronics Reliability, Volume 38, Issues 6-8, Pages 851-1366, 8 June 1998.
Cité dans :[SHEET120] A. HAMIDI, G. COQUERY, R. LALLEMAND, P. VALES, J.M. DORKEL, Temperature measurements and thermal modeling of high power IGBT multichip modules for reliability investigations in traction applications, ESREF'98, Reliability of Power Devices, Copenhague, 9
Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France.
Cité dans : [DATA036] Recherche sur les mots clés 3D simulation with ISE for semiconductor, 2000.
Cité dans : [DATA035] Recherche sur les mots clés thermal + fatigue + semiconductor et reliability + thermal + cycle, mars 2004.
Cité dans :[PAP409]
Cité dans :[PAP401]

Auteur : A. Hamidi (a)(c)
Auteur : G. Coquery (a)
Auteur : R. Lallemand (a)
Auteur : P. Vales (b)
Auteur : J.M. Dorkel (b)

Adresse : (a) New Technologies Laboratory, INRETS (Institut National de Recherche sur les Transports et leur Sécurité) 94114 Arcueil France
Adresse : (b) LAAS (Laboratoire d'Automatique et d'Analyse des Systèmes) CNRS, 31077 Toulouse France
Adresse : (c) Presently at ABB Corporate Research Center 5405 Baden-Dättwil Switzerland

Vers : Bibliographie
Lien : PAP409.HTM#Bibliographie - référence [5].
Lien : PAP401.HTM#Bibliographie - référence [12].

PII : S0026-2714(98)00134-6
Source : Microelectronics and Reliability
Volume : 38
Numéro : 6-8
Date : Jun-Aug 1998
Pages : 1353 - 1359
CODEN : MCRLAS
ISSN : 0026-2714
Language : English
Stockage : Thierry LEQUEU
Switches : IGBT
Lien : private/HAMIDI1.pdf - 7 pages, 574 Ko.

Abstract :
To study the failure mechanisms induced on high power IGBT multichip modules by thermal cycling stress in traction environment, a good
knowledge of the temperature distribution and variations on the chips and in the interfaces between the different layers of the
packaging is necessary.This paper presents a methodology for contact temperature measurements on chips surface in power cycling
conditions and a fast 3D thermal simulation tool for multilayered hybrid or monolithic circuits.The results of static and dynamic
thermal simulation of a 1200 A-3300 V IGBT module are given and compared with the contact temperature measurements results.The
investigation has been done within the RAPSDRA (Reliability of Advanced High Power Semiconductor Device for Traction Applications)
European project.(Author abstract)

  [1] :  [DIV339]  BE 95-2105, RAPSDRA: Reliability of Advanced Power Semiconductors for Railway Traction Applications.

Accession_Number : 1999(4):1235

Bibliographie

References : 5 Refs.
[1] : Blackburn D.L. A review of thermal characterisation of power transistors. 4th SEMITHERM symp. 1986.
[2] : Dorkel J.M, Tounsi P and Leturcq P. 3D Thermal modelling based on the two-port network theory for hybrid or monolithic integrated power circuits. IEEE Trans. Components, Packaging and Manufacturing Technology, part A, vol. 19, n° 4, 1996, pp. 501-507.
[3] : Hamidi A and Coquery G. Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions. ESREF, 1997, pp. 1755-1758.
[4] : Hamidi A, Coquery O and Lallemand R. Reliability of high power IGBT modules - Testing on thermal fatigue effects due to traction cycles. EPE, 1997, pp 3118-3123.
[5] : Jacob P, Held M Scacco P and Wu w. Reliability testing and analysis of IGBT power semiconductor modules. IEE proc. IGBT propulsion drives, London, 1995, pp 4/1-4/5.

  [1] :  [PAP158]  -------
  [2] :  [PAP158]  -------
  [3] : [SHEET356] A. HAMIDI, G. COQUERY, R. LALLEMAND, Effects of current density and chip temperature distribution on lifetime of high power IGBT modules in traction working conditions, European Symposium on Reliability of Electron Devices, Failure Physics and Analysis,
  [4] : [SHEET122] A. HAMIDI, G. COQUERY, R. LALLEMAND, Reliability of high power IGBT modules. Testing on thermal fatigue effects due to traction cycles, Proc. of EPE Conf., Trondheim, September 1997, vol. 3, pp. 3.118-3.123.
  [5] : [SHEET354] P. JACOB, M. HELD, P. SCACCO, W. WU, Reliability testing and analysis of IGBT power semiconductor modules, IEE proc. IGBT propulsion drives, London, pp. 4.1-4.5, 1995.

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