S. Bychikhin, M. Litzenberger, R. Pichler, D. Pogany, E. Gornik , "Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures", ESREF'2001, pp. 1501-1506

S. Bychikhin, M. Litzenberger, R. Pichler, D. Pogany, E. Gornik , "Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures", ESREF'2001, pp. 1501-1506 Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP367]

Titre : S. Bychikhin, M. Litzenberger, R. Pichler, D. Pogany, E. Gornik , Thermal and free carrier laser interferometric mapping and failure analysis of anti-serial smart power ESD protection structures, ESREF'2001, pp. 1501-1506

Cité dans : [DATA227] ESREF'2001, 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Arcachon, France , 1-5 octobre 2001.

Auteur : S. Bychikhin
Auteur : M. Litzenberger
Auteur : R. Pichler
Auteur : D. Pogany
Auteur : E. Gornik

Adresse : Vienna University of Technology - Austria
Source : ESREF'2001 - 12th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis - Arcachon - France.
Date : 1-5 octobre 2001
Site : http://www.elsevier.com/locate/microrel
Pages : 1501 - 1506
Lien : private/BYCHIKHIN.pdf - 6 pages, 100 Ko.

Abstract :
Thermal and free carrier distribution during electrostatic discharge (ESD) - like stress are investigated in anti-serial
smart power technology ESD protection devices by using a laser interferometry mapping technique. The
temperature- and free carrier - induced phase shift along the device length and width is studied as a function of stress
current. Two positive phase peaks due to heat dissipation caused by a vertical and a lateral current path are found
under the emitter contact and in the middle of the structure of an active npn transistor, respectively. A negative
phase peak is found at the position of the forward biased pn junction of an inactive transistor, where a high carrier
injection occurs. The positions of hot spots obtained from the thermal mapping method are correlated with the
results of physical failure analysis using the infrared microscopy.

Bibliographie

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  [1] : [SHEET485] H. Gossner, T. Müller-Lynch, K. Esmark, M. Stecher, Wide range control of the sustaining voltage of ESD protection elements realized in a smart power technology, Proc. EOS/ESD Symp. (1999) 19-27.

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