CATEGORIES

PAPERS IN THE FOLLOWING AREAS ARE REQUESTED

CMOS DEVICES:
Papers are solicited in the area of CMOS devices covering device physics, novel MOS device structures, CMOS scaling issues, high performance, low power devices, and analog/RF devices. Other topics of interest are high-frequencySOI, strained silicon and SiGe device issues, noise behavior of MOS structures and device measurement and characterization.

CMOS AND INTERCONNECT RELIABILITY:
Papers are solicited in all areas of reliability, both front-end and back-end of the process. Topics include hot carriers, gate dielectric wearout and breakdown, process charging damage, latch-up, ESD and soft errors. Other topics include interconnect reliability, electromigration, the impact of back-end processing on devices, manufacturing technologies for reliability, as well as reliability issues for SOI and BICMOS.

DETECTORS, SENSORS, AND DISPLAYS:
Papers are solicited on critical devices, structures, and integration for imaging, displays, detectors, sensors, and micro electromechanical systems (MEMS). A subset of key topics includes CMOS imagers, CCD's, TFT's, organic, amorphous, and polycrystalline devices, vacuum microelectronics, emissive displays and sensors for chemical, molecular and biological applications. Other relevant subjects include design, fabrication, reliability, theory, and modeling.

INTEGRATED CIRCUITS AND MANUFACTURING:
Papers are solicited covering advances in integrated circuits, novel memory cell concepts, full process integration for memory, logic and mixed-mode applications, and manufacturing. Areas of interest include process architecture for performance and manufacturing, high-speed logic, advanced memories, multifunction integrated circuits, integrated passives, low power, low noise, analog, RF and mixed signal ICs. Topics also include IC manufacturing technology and methodology, process control, failure analysis, yield enhancements and modeling.

MODELING AND SIMULATION:
Papers are solicited in the areas of analytical, numerical, and statistical approaches to modeling electron devices, their isolation and interconnection. Topics include physical and circuit models for devices and interconnect, modeling fabrication processes and equipment, simulation algorithms, process characterization, and parameter extraction.

PROCESS TECHNOLOGY:
Papers are requested on front-end and back-end process modules for fabrication of CMOS, memory, and BICMOS devices. Topics related to front-end processing include substrate technologies, lithography, etching, isolation technologies, thin dielectrics, high dielectric constant materials for transistor and MIM capacitors, shallow junctions, RTP, silicides, and new materials. Topics related to back-end processing include conductor systems, low dielectric constant materials, contact and via processes, planarization, and design considerations for multilevel interconnects.

QUANTUM ELECTRONICS AND COMPOUND SEMICONDUCTORS:
Papers are solicited in the areas of compound semiconductor and wide bandgap materials with electronic and photonic device applications. Topics include FET's, HBT's, high-power transistors, and devices with quantum, single electron, ballistic or spin effects. Also included are bioelectronics, self-assembly, nano and molecular scale devices, LED's, lasers, external modulators, photodetectors, optoelectronic and photonic integrated circuits, and optical interconnects.

SOLID STATE DEVICES:
Papers are solicited on discrete and integrated high power/current/voltage devices, silicon and silicon germanium bipolar transistors, novel analog and digital devices and technology, high speed Si devices, integrated RF components including inductors, capacitors and switches, single electron devices in silicon or silicon germanium. Other novel silicon structures are also included as are new methods of assessing silicon device and material performance.

©2002 by the IEEE http://www.ieee.org