S. AZZOPARDI, J.-M. VINASSA, E. WOIRGARD, C. ZARDINI, O. BRIAT, "A systematic hard- and soft-switching performances evaluation of 1200 V punchthrough IGBT structures", IEEE Transactions on Power Electronics, Vol. 19, No. 1, January 2004, pp. 231-241.
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Titre : S. AZZOPARDI, J.-M. VINASSA, E. WOIRGARD, C. ZARDINI, O. BRIAT, A systematic hard- and soft-switching performances evaluation of 1200 V punchthrough IGBT structures, IEEE Transactions on Power Electronics, Vol. 19, No. 1, January 2004, pp. 231-241.

Cité dans :[REVUE513] IEEE Transactions on Power Electronics, Volume 19, Issue 1, January 2004.
Cité dans : [DIV367]  Les revues IEEE Transactions on Power Electronics, août 2013.
Cité dans : [DATA147] IXL, Laboratoire IXL, Université de Bordeaux, Talence, France, http://www.ixl.u-bordeaux.fr
Cité dans : [DIV289]  Recherche sur l'auteur Christian ZARDINI, juillet 2004.
Cité dans : [DIV432]  Recherche sur l'auteur Stéphane AZZOPARDI, juillet 2004.
Cité dans : [DIV441]  Recherche sur l'auteur Eric WOIRGARD, juillet 2004.
Auteur : Azzopardi, S.
Auteur : Vinassa, J.-M.
Auteur : Woirgard, E.
Auteur : Zardini, C.
Auteur : Briat, O. - IXL-CNRS, Univ. Bordeaux, Talence, France

Source : IEEE Transactions on Power Electronics
Date : Jan. 2004
Pages : 231 - 241
Volume : 19
Issue : 1
ISSN : 0885-8993
Lien : private/AZZOPARDI3.pdf - 11 page, 962 Ko.
Accession_Number : 7967204 INSPEC

Abstract :
The performances of various 1200 V insulated gate bipolar transistor (IGBT) structures for hard- and soft-switching (both the zero-voltage and the zero-current switching) at high temperature and under various test conditions are investigated in detail. A comparison is made between a conventional planar punchthrough IGBT (P-IGBT) using global lifetime control, a trench punchthrough IGBT (T-IGBT) using local lifetime control and a enhanced planar punchthrough IGBT (N-IGBT) also using the local lifetime control process. A simple and effective specific test circuit allows hard- and soft-switching operating modes, and provides also an independent control on the test parameters (load current, clamping voltage, gate resistance, temperature, dead times). It is highlighted that the local lifetime control is very efficient at high temperature reducing especially the turn-off losses. Furthermore, the T-IGBT exhibits very good performances during hard- and soft-switching turn-off, but this is not the case during hard-switching and zero-voltage switching turn-on. Due to its high input capacitance, the hard-switching turn-on losses are relatively high. Regarding the N-IGBT, it presents good performances under hard-switching and also zero-voltage switching. However, like the T-IGBT, its structure has a strong "inductance behavior" during zero-voltage turn-on increasing the conductivity modulation lag and also the voltage spike leading to high losses. All these data allow to provide useful information for the devices modeling, design, and optimization.

Index_Terms :
insulated gate bipolar transistors power bipolar transistors power semiconductor switches semiconductor device models N-IGBT P-IGBT T-IGBT clamping voltage gate resistance global lifetime control hard switching insulated gate bipolar transistor load current local lifetime control planar punchthrough IGBT structures soft switching systematic switching performance zero-current switching zero-voltage switching


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