C. Winterhalter, S. Pendharkar, K. Shenai, "A novel circuit for accurate characterization and modeling of the reverse recovery of high-power high-speed rectifiers", IEEE Transactions on Power Electronics, Vol. 13, No. 5, September 1998, pp. 924-931.

C. Winterhalter, S. Pendharkar, K. Shenai, "A novel circuit for accurate characterization and modeling of the reverse recovery of high-power high-speed rectifiers", IEEE Transactions on Power Electronics, Vol. 13, No. 5, September 1998, pp. 924-931. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART408]

Titre : C. Winterhalter, S. Pendharkar, K. Shenai, A novel circuit for accurate characterization and modeling of the reverse recovery of high-power high-speed rectifiers, IEEE Transactions on Power Electronics, Vol. 13, No. 5, September 1998, pp. 924-931.

Cité dans :[REVUE402] IEEE Transactions on Power Electronics, Volume 13, Issue 5, September 1998.
Cité dans : [DIV367]  Les revues IEEE Transactions on Power Electronics, août 2013.

Source : IEEE Transactions on Power Electronics
Volume : 13
Issue : 5
Date : September 1998
Pages : 924 - 931
Stockage : Thierry LEQUEU
Lien : private/Winterhalter1.pdf - 173 Ko, 8 pages.

Abstract :
As circuit switching frequency continues to increase,
there is a need to produce faster rectifiers with lower power
losses. Efficient utilization of high-power ultrafast rectifiers re-quires
precise knowledge of the key static and dynamic switching
parameters, especially the reverse-recovery characteristics. Con-ventional
reverse-recovery test circuits were developed to test
rectifiers with reverse-recovery times (tt t RR RR RR ) greater than 100 ns,
however, new measurement techniques are needed for accurate
characterization and modeling of the high-power ultrafast recti-fier
reverse-recovery process. A test circuit topology is proposed
which offers several advantages over existing test circuits. This
circuit offers the ability to characterize high-power ultrafast
rectifiers at very high di=dt di=dt di=dt and also provides independent control
of bias current, reverse voltage, and di=dt di=dt di=dt. This circuit is also
studied using a two-dimensional (2-D) mixed device and circuit
simulator in which the device under test is represented as a 2-D
finite-element grid and the semiconductor equations are solved
under boundary conditions imposed by the proposed test circuit.
This simulation tool is used to understand the device physics of
the reverse-recovery process and develop more accurate models to
be implemented in behavioral circuit simulators. The simulation
results are then compared to the measured data for a silicon
P-i-N and 200-V GaAs Schottky rectifier under various measure-ment
conditions. Simulation results are shown to be in excellent
agreement with the measured data.

Index-Terms : GaAs, reverse recovery, Schottky rectifier.

Bibliographie

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  [1] : [LIVRE034] N. MOHAN, T.M. UNDELAND, W.P. ROBBINS, Power Electronics - Converters, Applications and Design, John Wiley & Sons, 1995 second edition, 802 pages.

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