C. Winterhalter, S. Pendharkar, K. Shenai, "A novel circuit for accurate characterization and modeling of the reverse recovery of high-power high-speed rectifiers", IEEE Transactions on Power Electronics, Vol. 13, No. 5, September 1998, pp. 924-931.
Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [ART408]

Titre : C. Winterhalter, S. Pendharkar, K. Shenai, A novel circuit for accurate characterization and modeling of the reverse recovery of high-power high-speed rectifiers, IEEE Transactions on Power Electronics, Vol. 13, No. 5, September 1998, pp. 924-931.

Cité dans :[REVUE402] IEEE Transactions on Power Electronics, Volume 13, Issue 5, September 1998.
Cité dans : [DIV367]  Les revues IEEE Transactions on Power Electronics, août 2013.

Source : IEEE Transactions on Power Electronics
Volume : 13
Issue : 5
Date : September 1998
Pages : 924 - 931
Stockage : Thierry LEQUEU
Lien : private/Winterhalter1.pdf - 173 Ko, 8 pages.

Abstract :
As circuit switching frequency continues to increase,
there is a need to produce faster rectifiers with lower power
losses. Efficient utilization of high-power ultrafast rectifiers re-quires
precise knowledge of the key static and dynamic switching
parameters, especially the reverse-recovery characteristics. Con-ventional
reverse-recovery test circuits were developed to test
rectifiers with reverse-recovery times (tt t RR RR RR ) greater than 100 ns,
however, new measurement techniques are needed for accurate
characterization and modeling of the high-power ultrafast recti-fier
reverse-recovery process. A test circuit topology is proposed
which offers several advantages over existing test circuits. This
circuit offers the ability to characterize high-power ultrafast
rectifiers at very high di=dt di=dt di=dt and also provides independent control
of bias current, reverse voltage, and di=dt di=dt di=dt. This circuit is also
studied using a two-dimensional (2-D) mixed device and circuit
simulator in which the device under test is represented as a 2-D
finite-element grid and the semiconductor equations are solved
under boundary conditions imposed by the proposed test circuit.
This simulation tool is used to understand the device physics of
the reverse-recovery process and develop more accurate models to
be implemented in behavioral circuit simulators. The simulation
results are then compared to the measured data for a silicon
P-i-N and 200-V GaAs Schottky rectifier under various measure-ment
conditions. Simulation results are shown to be in excellent
agreement with the measured data.

Index-Terms : GaAs, reverse recovery, Schottky rectifier.



[1] : N. Mohan, T. M. Undeland, and W. P. Robbins, Power Electronics: Converters, Applications, and Design, 2nd ed. New York: Wiley, 1995.
[2] : I. Somos and D. Picone, The P.S. Method. Cardinal, 1980.
[3] : K. Mayaram, B. Tien, C. Hu, and D. Pederson, "Simulation and modeling for soft recovery of P-i-N rectifiers," in IEEE Int. Electron Devices Meet. Dig., 1988, pp. 622–625.
[4] : C. W. Lee and S. B. Park, "Design of a thyristor snubber circuit by considering the reverse recovery process," IEEE Trans. Power Electron., vol. 3, no. 4, 1988, pp. 440–446.
[5] : E. I. Carroll and R. S. Chokhawala, "A snubber design tool for PN junction reverse recovery using a more accurate simulation of the reverse recovery waveform," in Dig. Annu. Industry Applications Soc. Meet., 1989, pp. 1307–1318.
[6] : ATLAS Users Manual, Silvaco International, Santa Clara, CA.
[7] : K. Shenai, "Mixed-mode circuit simulation: An emerging CAD tool for the design and optimization of power semiconductor devices and circuits," in Proc. IEEE 1994 PELS Workshop on Computers in Power Electronics, Aug. 7–10, 1994, pp. 11–15.
[8] : Rectifier Applications Handbook, 3rd ed. Motorola, Inc., 1993.
[9] : J. Catt, "An improved method for ultra-fast recovery diode testing," in APEC, 1994, pp. 473–479.
[10] : S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981.
[11] : C. Y. Chang and S. M. Sze, "Carrier transport across metal-semiconductor barriers," Solid State Electronic, vol. 13, pp. 727–740, 1970.
[12] : K. Shenai and R. W. Dutton, "Carrier transport mechanisms in atom-ically abrupt metal-semiconductor interfaces," IEEE Trans. Electron Devices, vol. 35, no. 4, pp. 468–482, 1988.
[13] : S. J. Anderson, B. Almesfer, and L. V. Munukutla, "Conduction and switching characteristics of III–V Schottky rectifiers for low loss switching," in APEC, 1992, pp. 433–438.
[14] : SABER-A Behavioral Circuit Simulator, Analogy, Inc., Beaverton, OR.
[15] : S. Pendharkar, C. Winterhalter, and K. Shenai, "A behavioral circuit simulation model for high-power GaAs Schottky diodes," IEEE Trans. Electron Devices, vol. 42, no. 10, pp. 1847–1854, 1995.

  [1] : [LIVRE034] N. MOHAN, T.M. UNDELAND, W.P. ROBBINS, Power Electronics - Converters, Applications and Design, John Wiley & Sons, 1995 second edition, 802 pages.

Mise à jour le lundi 10 avril 2023 à 18 h 47 - E-mail : thierry.lequeu@gmail.com
Cette page a été produite par le programme TXT2HTM.EXE, version 10.7.3 du 27 décembre 2018.

Copyright 2023 : TOP

Les informations contenues dans cette page sont à usage strict de Thierry LEQUEU et ne doivent être utilisées ou copiées par un tiers.
Powered by www.google.fr, www.e-kart.fr, l'atelier d'Aurélie - Coiffure mixte et barbier, La Boutique Kit Elec Shop and www.lequeu.fr.