R. QUINTERO, A. CERDEIRA, A. ORTIZ-CONDE, "Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors", Microelectronics Reliability, Volume 42, Issues 1, January 2002, pp.
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Titre : R. QUINTERO, A. CERDEIRA, A. ORTIZ-CONDE, Quasi-three-dimensional spice-based simulation of the transient behavior, including plasma spread, of thyristors and over-voltage protectors, Microelectronics Reliability, Volume 42, Issues 1, January 2002, pp. 67-76.

Cité dans :[REVUE281] Elsevier Science, Microelectronics Reliability, Volume 42, Issue 1, Pages 1-156, January 2002.
Cité dans : [DIV334]  Recherche sur les mots clés power cycling of power device, mai 2002.
Auteur : Rodolfo Quintero
Auteur : Antonio Cerdeira
Auteur : Adelmo Ortíz-Conde

Vers : Bibliographie
Adresse : Sección de Electrónica del Estado Sólido, Dep. de Ingeniería Eléctrica, CINVESTAV, Av. IPN 2508, México D.F., C.P. 07300, Mexico
Lien : mailto:rquinter@mail.cinvestav.mx
Source : Microelectronics Reliability
Volume : 42
Issues : 1
Date : January 2002
Pages : 67 - 76
DOI : 10.1016/S0026-2714(01)00131-7
PII : S0026-2714(01)00131-7
Lien : private/QUINTERO1.pdf - 10 pages, 442 Ko.
Switches :
Puissance :
Logiciel : Wolfram
Stockage :

Abstract :
This paper describes a fast and reliable circuit-based simulation method of
two-dimensional electrical transient characteristics of thyristors and
over-voltage protectors (TOVP). Either device is divided into four-layered
square prisms, and a one-dimensional PNP-NPN transistor pair model associated to
each of them. The transistors are represented with the Gummel-Poon model,
complemented with breakdown and quasi-saturation sub-models. The cells in turn
are coupled through the base planes, with current-modulated resistors.
Plasma-spreading velocities obtained through simulation are comparable to
experimentally obtained ones reported elsewhere. Spatial current density
instabilities induced by device asymmetries are also presented. The required
spatial resolution was attained by representing these four-layer devices with up
to 40,000 Spice circuit elements, including 3000 bipolar junction transistors.
The associated Spice lists were assembled effortlessly with a Mathematica
program. Simulations took from 1 to 3 h in a 650 MHz Pentium III computer, with
no symptoms of convergence problems whatsoever. The authors believe this is the
first time that Spice based high-resolution transient behavior simulations of
TOVPs and thyristors are presented in the literature.

Article Outline
1. Introduction
2. Simulation method description
2.1. Transient overvoltage protector and thyristor top level models
2.2. Gummel-Poon model extension
2.3. Circuit parameter extraction
2.4. Shorting dots equivalent circuit
2.4.1. Base model for VBE<0.65 V
2.4.2. NPN transistor base model valid when VBE>0.65 V
2.5. Plasma spread model
3. Circuit simulation
4. Simulation results
5. Conclusions



Références : 25
[1] : M.S. Adler and V.A.K. Temple , The dynamics of the thyristor turn-on process. IEEE Trans Electron Dev ED-27 2 (1980), pp. 483-494. Abstract-INSPEC | Abstract-Compendex
[2] : Kraus R, Mattausch HJ. Status and trends of power semiconductor device models for circuit simulation. IEEE Trans Power Electron 1998;13(3).
[3] : H. Goebel , A unified method for modeling semiconductor power devices. IEEE Trans Power Electron 9 5 (1994), pp. 497-505. Abstract-INSPEC | Abstract-Compendex | Full-text via CrossRef
[4] : M.H. El-Saba and A. Zekry , A fast CAD model of lasma spread in thyristors using a seminumerical time-domain approach. IEEE Trans Electron Dev ED-46 9 (1999), pp. 1901-1909. Abstract-INSPEC | Abstract-Compendex | Full-text via CrossRef
[5] : Quintero R, Cerdeira A. Circuit simulation of electrical transient behavior of four-layer power devices. SBMicro2000 - 15th International Conference on Microelectronics and Packaging, Manaos, Brazil, 18-24 September 2000.
[6] : D. Flores, X. Jordà, S. Hidalgo, J. Fernández, J. Rebollo, J. Millán, I. Sierra and I. Mazarredo , An optimized bidirectional lighting surge protection semiconuctor device. IEEE Trans Electromag Compat 41 1 (1999), pp. 30-38. Abstract-INSPEC
[7] : A. Zekry and W. Gerlach , Investigation of the lateral turn-on process of thyristors with an epitaxial p-base. IEEE Trans Electron Dev ED-30 2 (1983), pp. 104-110. Abstract-INSPEC | Abstract-Compendex
[8] : H.K. Gummel and H.C. Poon , An integral charge control model of bipolar transistors. Bell Sys Techn J 49 (1970), pp. 827-852.
[9] : Getreu I. Modeling the bipolar transistor. New York: Elsevier; 1978.
[10] : McAndrew CC, Seitchik JA, Bowers DF, Dunn M, Foisy M, Getreu I, McSwain M, Moinian S, Parker J, Roulston DJ, Schroter M, van Wijnen P, Wagner LF. VBIC95, the vertical bipolar inter-company model. IEEE J Solid-State Circ 1996;31(10):1476-83.
[11] : X. Cao, J. McMacken, K. Stiles, P. Layman, J.J. Liou, A. Ortiz-Conde and S. Moinian , Comparison of the new VBIC and conventional Gummel-Poon bipolar transistor models. IEEE Trans Electron Dev 47 2 (2000), pp. 427-433.
[12] : R.W. Dutton , Bipolar transistor modeling of avalanche generation for computer circuit simulation. IEEE Trans Electron Dev ED-22 6 (1975), pp. 334-338. Abstract-INSPEC
[13] : Orcard PSpice ver. 9.1. Orcard release 9 online manuals and quick reference cards. http://www.pspice.com
[14] : G.M. Kull, L.W. Nagel, S. Lee and P. Lloyd , A unified circuit model for bipolar transistors including quasi-saturation effects. IEEE Trans Electron Dev ED-32 6 (1985), p. 1113.
[15] : Athena process simulator, Silvaco International. 16. Atlas device simulator, Silvaco International.
[17] : A. Cerdeira and M. Estrada , New method for the determination of carrier lifetime in diodes using a sinusoidal current pulse. Solid-State Electron 42 5 (1998), pp. 727-731. Abstract | Journal Format-PDF (285 K)
[18] : A. Munoz-Yague and P. Leturq , Optimum design of thyristor gate-emitter geometry. IEEE Trans Electron Dev ED-23 8 (1976), pp. 917-924. Abstract-INSPEC | Abstract-Compendex
[19] : Atkinson KE. An introduction to numerical analysis. New York: Wiley; 1978. p. 482.
[20] : Baliga BJ. Power semiconductor devices. PWS Publishing Company; 1996. p. 267.
[21] : A. Ortiz-Conde, F.J. García Sánchez and J. Muci , Exact analytical solutions of the forward non-ideal diode equation with series and shunt parasitic resistances. Solid-State Electron 44 (2000), pp. 1861-1864. SummaryPlus | Article | Journal Format-PDF (86 K)
[22] : M.S. Adler , Details of the plasma-spreadidng process in thyrisors. IEEE Trans Electron Dev ED-27 2 (1980), pp. 495-502. Abstract-INSPEC | Abstract-Compendex
[23] : Hébert F, Roulston DJ. Unified model for bipolar transistors including the voltage and current dependence of the base and collector resistances as well as the breakdown limits. J de Physique, Colloque C4, supplément au no 9, Tome 49, Septembre 1988.
[24] : F. Hébert and D.J. Roulston , Voltage- and current-dependent model for the base resistance of bipolar transistors. IEEE Trans Electron Dev 35 10 (1988), pp. 1696-1699. Abstract-INSPEC
[25] : Wolfram S. The Mathematica Book: A system for doing mathematics by computer. 4th ed. Reading, MA: Addison Wesley. http://www.wolfram.com

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