MITLEHNER H., BARTSCH W., BRUCKMANN M., DOHNKE K.O., WEINERT U., "The potential of fast high voltage SiC diodes", ISPSD'97, pp. 165-168, 26-29 May 1997.
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Titre : MITLEHNER H., BARTSCH W., BRUCKMANN M., DOHNKE K.O., WEINERT U., The potential of fast high voltage SiC diodes, ISPSD'97, pp. 165-168, 26-29 May 1997.

Cité dans : [CONF007] ISPSD, Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits
Cité dans : [DIV137]  Recherche sur les mots clés : FIABILIT* ou RELIABILITY, octobre 1999.
Auteurs : Mitlehner, H.; Bartsch, W.; Bruckmann, M.; Dohnke, K.O.; Weinert, U. - Corp. Technol., Siemens AG, Erlangen, Germany

Appears : Power Semiconductor Devices and IC's, 1997. ISPSD '97., 1997 IEEE International Symposium on
Page : 165 - 168
Date : 26-29 May 1997
ISBN : 0-7803-3993-2, IEEE Catalog Number: 97CH36086, Total Pages: 375, Accession_Number : 5703908
Lien : private/BARTCH.pdf - 355 Ko.

Abstract :
Silicon carbide power devices offer important advantages compared
to silicon devices, regarding higher power ratings at clearly
reduced static and dynamical losses, better reliability because
of possible higher operating temperatures, and significant
savings in system cooling equipment. Physically, these benefits
are mainly due to the wide band gap of SiC and the by an order of
magnitude higher critical electric field. Consequently, the
doping concentration will be by 2 orders of magnitude higher and
the thickness of the devices about an order of magnitude lower
for the same blocking voltage compared to silicon. Therefore, the
power rating of unipolar devices such as Schottky diodes,
vertical JFETs and MOSFETs is strongly extended to high voltage
application. On the other side bipolar devices such as p-n
diodes, IGBTs and thyristors will predominantly be used for
applications, where blocking voltages considerably higher than
2000 V and/or increased operational temperatures are required.
This is a consequence of their higher threshold voltage compared
to Si. To clarify differences in the overall electrical
behaviour, both types of diodes with blocking voltages below 2000
V should be analysed. In this paper we present the properties and
limitations of 4H-SiC diodes and relate the experimental data of
Schottky and p-n diodes with results obtained with the device
simulator MEDICI.

Subjet_terms :
silicon compounds; fast high voltage SiC diodes; power devices;
blocking voltages; 4H-SiC diodes; Schottky diodes; p-n diodes;
device simulator; MEDICI; SiC

Reference_cited : 7


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