Z. KHATIR, S. LEFEBVRE, "Thermal analysis of high power IGBT modules", ISPSD'2000, Toulouse, France, May 22-25, 2000, pp. 271-274.
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Article : [SHEET355]

Titre : Z. KHATIR, S. LEFEBVRE, Thermal analysis of high power IGBT modules, ISPSD'2000, Toulouse, France, May 22-25, 2000, pp. 271-274.

Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France.
Cité dans : [DATA125] ISPSD'2000, 12th Internationnal Symposium on Power Semiconductor Devices & Integrated Circuits, May 22-25 2000, Toulouse, France.
Cité dans : [DIV334]  Recherche sur les mots clés power cycling of power device, mai 2002.
Cité dans :[ART190]
Auteur : Zoubir Khatir
Auteur : Stéphane Lefebvre

Stockage : Thierry LEQUEU
Lien : khatir.pdf - 959 Ko, 4 pages.
Source : ISPSD'2000, Toulouse, France
Pages : 271 - 274
Date : May 22-25, 2000

Abstract :
The technology of high power IGBT modules has been improved significantly these last years against
thermal fatigue and the first weaknesses related to the bonding die attach have been well enough
corrected. Nowadays, the most frequently observed failure mode is the solder layer cracks between
copper base plate material and the ceramic. Experimental tests must be completed by numerical
simulation tools in order to analyse this type of failure related to power cycling constraints.
Thermal simulations of high power IGBT modules based on boundary element method are described in
this paper. A validation of the numerical tool is shown in steady-state and dynamic operations
during a power cycle by comparison with experimental measurements. Finally, using the software,
a model of solder layer cracks between copper base plate and the DCB ceramic is applied in order
to investigate its effect on the thermal constraints.

Index_terms : Thermal modelling, Boundary element method, Thermal analysis, IGBT modules, Power cycling, Thermal resistance.


Bibliographie

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References : 6
[1] : A. Hamidi and G. Coquery, "Contact temperature measurements on chip surface for reliability investigations of high power IGBT modules in traction applications", 3rd Europ. Conf. On Electronic Packaging Technology, Nuremberg, 1998.
[2] : J.M. Dorkel, P. Tounsi and Ph. Leturcq, "3D Thermal modelling based on the two-port network theory for hybrid or monolithic integrated power circuits", IEEE Trans Components, Packaging and Manufacturing Technology, part A, vol. 19, no. 4, 1996, pp. 501-507.
[3] : C.A. Brebbia and L.C. Wrobel, "Boundary Element methods in Heat Transfer", copublished by Computational Mechanics Publications and Elsevier Applied Science, 1992.
[4] : C.A. Brebbia, J.C.F. Telles and L.C. Wrobel, "Boundary Element Techniques", Springer-Verlag, 1984.
[5] : L. Guven, C. Lik Chang, E. Madenci "Transient two-dimensional thermal analysis of electronic packages by the boundary element method" IEEE Trans on advanced packaging, vol. 22, No. 3, 1999.
[6] : G. Coquery et al. "Reliability improvement of the soldering thermal fatigue with AlSiC technology on traction high power IGBT modules", Proc. of EPE'99, Lausanne, 1999.
  [1] : [SHEET360] A. HAMIDI, G. COQUERY, Contact temperature measurements on chip  surface for reliability investigations of high power IGBT modules in traction applications, 3rd Europ. Conf. On Electronic Packaging Technology, EUPAC'98, Nuremberg, juin 1998, 9 pages.
  [2] :  [PAP158]  -------
  [3] :  [PAP158]  -------
  [4] :  [PAP158]  -------
  [5] :  [PAP158]  -------
  [6] : [SHEET119] G. COQUERY, R. LALLEMAND, D. WAGNER, M. PITON, H. BERG, K. SOMMER, Reliability improvement of the soldering thermal fatigue with AlSiC technology on traction high power IGBT modules, EPE'99, paper 904, 1999.


STN Easy - REPONSE 7, le 06/05/2002.

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Titre : Thermal analysis of high power IGBT modules.
Meeting : 12th International Symposium on Power Semiconductor Devices and ICs.
Info : organization : IEEE
Location : Toulouse, France
Source : IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD) 2000.p 271-274
CODEN : PISDEK
Année : 2000
Meeting_Number : 58097

Abstract :
The technology of high power IGBT modules has been improved
significantly these last years against thermal fatigue and the first
weaknesses related to the bonding die attach have been well enough
corrected. Nowadays, the most frequently observed failure mode is the
solder layer cracks between copper base plate material and the ceramic.
Experimental tests must be completed by numerical simulation tools in
order to analyze this type of failure related to power cycling
constraints. Thermal simulations of high power IGBT modules based on
boundary element method are described in this paper. A validation of the
numerical tool is shown in steady-state and dynamic operations during a
power cycle by comparison with experimental measurements. Finally, using
the software, a model of solder layer cracks between copper base plate and
the DCB ceramic is applied in order to investigate its effect on the
thermal constraints. 6 Refs.

Accession_Number : 2001(24):1525 COMPENDEX


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