M. CIAPPA, "Selected failure mechanisms of modern power modules", Microelectronics Reliability, Volume 42, Issues 4-5, April-May 2002, pp. 653-667.
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Article : [ART227]

Titre : M. CIAPPA, Selected failure mechanisms of modern power modules, Microelectronics Reliability, Volume 42, Issues 4-5, April-May 2002, pp. 653-667.

Cité dans :[REVUE296] Elsevier Science, Microelectronics Reliability, Volume 42, Issues 4-5, Pages 463-804, April - May 2002.
Cité dans : [DIV334]  Recherche sur les mots clés power cycling of power device, mai 2002.
Auteur : Mauro Ciappa - Physical Characterization Group, Integrated Systems Laboratory, Swiss Federal Institute of Technology (ETH), CH-8092 Zurich, Switzerland

Vers : Bibliographie
DOI : 10.1016/S0026-2714(02)00042-2
PII : S0026-2714(02)00042-2
Source : Microelectronics Reliability
Volume : 42
Issues : 4-5
Date : April-May 2002
Pages : 653 - 667
Lien : ciappa1.pdf - 614 Ko, 15 pages
Switches : IGBT
Stockage : Thierry LEQUEU

Abstract :
This paper reviews the main failure mechanisms occurring in modern power modules
paying special attention to insulated gate bipolar transistor devices for
high-power applications. This compendium provides the main failure modes, the
physical or chemical processes that lead to the failure, and reports some major
technological countermeasures, which are used for realizing the very stringent
reliability requirements imposed in particular by the electrical traction
applications.

Article Outline
1. Introduction
2. Module architectures
3. Materials and thermomechanics
4. Bond wire fatigue
4.1. Bond wire lift off
4.2. Bond wire heel cracking
5. Aluminum reconstruction
6. Brittle cracking and fatigue crack propagation
7. Corrosion of the interconnections
8. Solder fatigue and solder voids
8.1. Voids
8.2. Solder fatigue
9. Burnout failures
9.1. Latch up
9.2. Cosmic rays
10. Conclusions
Acknowledgements


Bibliographie

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