CONFERENCE PROGRAM

Monday, October 11, 1999
OPENING AND MORNING SESSIONS
  9:00 am WELCOME – OPENING
SESSION I-A. MATERIALS GROWTH: CdTe & CZT
I-A.1 9:15 invited Crystal growth and homogeneity of CdZnTe:. F.P. Doty, Sandia National Laboratories, Livermore CA 94550, USA
I-A.2 9:45 On hydrogen transport VPE grown CdTe epilayers for fabrication of 1-100 keV X-ray detectors: N. Lovergine1, A. Cola2, P. Prete2, L. Tapfer3, M. Bayhan1,* and A.M. Mancini1, 1INFM, and Dipartimento di Ingegneria dell’Innovazione, Universitŕ di Lecce, Via Arnesano, 73100 Lecce, Italy ; 2IME-CNR, Via Arnesano, 73100 Lecce, Italy ; 3Pastis-CNRSM, SS. 7 "Appia", km 712, 72100 Brindisi, Italy ; *Permanent Address: Dept. of Physics, University of Mugla, Mugla, Turkey.
I-A.3 10:00 Thin-film CdTe for imaging detector applications: .A.M.D. Ede, E.J. Morton, P. DeAntonis, Department of Physics, University of Surrey, Guildford, GU2 5XH, UK
  10:15 COFFEE BREAK
SESSION I-B. MATERIALS GROWTH: CdTe & CZT (continued)
I-B.1 10:30 invited Growth from the vapor phase of CdTe and related compounds: M. Fiederle1, T. Feltgen2, W. Joerger2, J. Meinhardt2, K.W. Benz1,2, 1Freiburger Materialforschungszentrum FMF, Stephan-Meier-Strasse 21; 2Kristallographisches Institut, Hebelstrasse 25, Universität Freiburg, 79104 Freiburg, Germany.
I-B.2 11:00 Growth and properties of semi-insulating CdZnTe single crystals grown by the conventional vertical Bridgman technique: C. Szeles, E.E. Eissler, D.J. Reese and S.E. Carneron, eV PRODUCTS, a division of II-VI Inc., Saxonburg, PA 16056, USA
I-B.3 11:15 Analysis of steady and accelerated crucible rotation on large-scale high-pressure vertical Bridgman growth of CZT: A. Yeckel and J.J. Derby, Department of Chemical Engineering and Materials Science, Army HPC Research Center, and Minnesota Supercomputer Institute, University of Minnesota, Minneapolis, MN 55455-0132, USA.
I-B.4 11:30 CdZnTe crystals for X-ray computed tomography detectors: O.A.Matveev, A.I.Terent’ev, V.P.Karpenko, Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, Russia.
I-B.5 11:45 First principles calculations of liquid II-VI compounds at temperatures above and below their melting points: M. Jain, J.J. Derby and J.R. Chelikowsky, Department of Chemical Engineering and Materials Science, Army HPC Research Center, and Minnesota Supercomputer Institute, University of Minnesota, Minneapolis, MN 55455-0132, USA.
  12:00 LUNCH
Monday, October 11, 1999
AFTERNOON SESSIONS
SESSION II. MEDICAL APPLICATIONS
II.1 2:00 pm invited CdZnTe and CdTe detectors in nuclear medicine: C. Scheiber, NM Service, Institut de Physique Biologique, 4 Rue Kirschleger, 67085 Strasbourg Cedex, France.
II.2 2:30 invited Intraoperative detection of radiolabeled compounds using a hand held gamma probe: M. Ricard, Institut Gustave-Roussy and U494 INSERM, 94805 Villejuif, France.
II.3 3:00 CZT pixel detector modules for medical imaging and nuclear spectrometry: U. El-Hanany, A. Shahar, A. Tsigelman, IMARAD Imaging Systems Ltd, PO Box 2489, Rehovot 76124, Israel.
II.4 3:15 Sentinel node in cancer diagnosis with " Europrobe " system: P. Fougčres1, A. Kazandjian1, M. Ricard2, V. Prat1 and H. Simon1, 1EURORAD Inc., BP 20, 67037 Strasbourg Cedex 2, France ; 2Institut Gustave-Roussy and U494 INSERM, 94805 Villejuif, France.
II.5 3:30 Theoretical and experimental sensitivity of HgI2, PbI2 and CdZnTe single crystal detectors to radiological X rays: M. Schieber1,2, H. Hermon3, A. Zuck1, A. Vilensky3, L. Melekhov1,3, R. Shatunovsky3, E. Meerson3 and H. Saado1,3, 1Hebrew University of Jerusalem, Jerusalem 91904, Israel; 2also at Sandia National Laboratories, Livermore CA 94550, USA ; 3Real Time Radiography Readout, Malkha Technological Park, Jerusalem 91487, Israel.
II.6 3:45 Spectroscopy with pixelated CdZnTe gamma detectors – Experiment versus theory: A. Shor, Y. Eisen, and I. Mardor, Applied RadiationTechnologies Division, Soreq NRC, Yavne 81800, Israel.
II.7 4:00 Preliminary performance of CdZnTe imaging detector prototypes: B. Ramsey1, D.P. Sharma1, J. Meisner1, V. Gostilo2, V. Ivanov2, A. Loupilov2, A. Sokolov2, H. Sipila3, 1Space Science Department, Marshall Space Center, Huntsville, AL 35812, USA ; 2Baltic Scientific Instruments, Ganibu dambis 26, PO Box 33, 1005 Riga, Latvia ; 3Metorex International Oy, Nihtisillanskuja 5, 02631 Espoo, Finland.
II.8 4:15 A new design for a high resolution, high efficiency CZT gamma camera detector: C. Mestais, N. Baffert, J.P. Bonnefoy, A. Chapuis, A. Koenig, O. Monnet, P. Ouvrier Buffet, J.P. Rostaing, F. Sauvage, L. Verger, LETI (CEA-Technologies Avancées), CEA/GRE, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France.
II.9 4:30 Spectroscopic and detection performance of thick GaAs crystals for nuclear medicine applications: E. Bertolucci1, M.G. Bisogni2, U. Bottigli2, A.Cola3, M. Conti1, M.E. Fantacci2, P. Maestro2, G. Mettivier1, F. Quaranta3, V. Rosso2, P. Russo1, A. Stefanini2, L. Vasanelli3; 1Dipartimento di Scienze Fisiche dell’Universita’ Federico II and Sezione INFN, Napoli, Italy ; 2Dipartimento di Fisica dell’Universita’ and Sezione INFN, Pisa, Italy; 3C.N.R.-I.M.E and Sezione INFN, Lecce, Italy.
II.10 4:45 Study of THM-CdTe monolithic nuclear detectors matrix: M. Hage-Ali, A. Zumbiehl, J.M. Koebel, R. Régal, C. Rit, M. Ayoub and P. Siffert, CNRS/PHASE, BP 20, 67037 Strasbourg Cedex 2, France.
Tuesday, October 12, 1999
MORNING SESSIONS
SESSION III-A. AS GROWN MATERIAL CHARACTERIZATION (CdTe & CZT)
III-A.1 8:30 am invited Ab initio calculations of defects densities in CdTe: M. Berding, Applied Physical Electronics Laboratory, SRI International, 333 Ravenswood Avenue, Menlo Park, CA 94025, USA.
III-A.2 9:00 invited The spatial response of CdZnTe gamma-ray detectors as measured by gamma-ray mapping: B.A. Brunett1, J.M. Van Scyoc1, N.R. Hilton1, T.E. Schlesinger2, H.B. Barber3 and R.B. James1, 1Sandia National Laboratories, Livermore, CA 94550, USA ; 2Carnegie Mellon University, Pittsburgh, PA 15213, USA; 3University of Arizona, Tucson, AZ 85724, USA.
III-A.3 9:30 Defect engineering in CdTe, based on the total energies of elementary defects: V. Batentsov1, V. Corregidor1, K. Benz2, K. Fiederle2, T. Feltgen2 and E. Dieguez1, 1Dpto. Fisica de Materiales, Universidad Autonoma de Madrid, Spain; 2Kristallographisches Institut, Universität Freiburg, Germany
III-A.4 9:45 Defect structure of CdZnTe: L. Turjanska, P. Höschl, E. Belas, R. Grill, J. Franc and P. Moravec, Institute of Physics, Charles University, Ke Karlovu 5, 121 16 Prague 2, Czech Republic
III-A.5 10:00 Material uniformity of CdZnTe grown by low pressure Bridgman: C.M. Greaves1, B.A. Brunett2, T.E. Schlesinger1 and R.B. James2, 1Carnegie Mellon University, Pittsburgh, PA 15213, USA; 2Sandia National Laboratories, Livermore, CA 94550, USA.
  10:15 COFFEE BREAK
SESSION III-B. AS GROWN MATERIAL CHARACTERIZATION (CdTe & CZT) (continued)
III-B.1 10:30 invited Indium dopant behaviour in CdTe single crystals: P. Fochuk1, O. Panchuk1, P. Feychuk1, L. Shcherbak1, A. Savitskyi1, O. Parfenyuk1, M. Hage-Ali2 and P. Siffert2, 1University of Chernivtski, Chemistry and Physics Dept, 2 vul. Kotziubinskoho, 274012 Chernivtsi, Ukraine; 2CNRS/PHASE, BP 20, 67037 Strasbourg Cedex 2, France.
III-B.2 11:00 Laser induced diffusion of donor and acceptor dopants in CdTe crystals: N.K. Zelenina, O.A.Matveev, Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, Russia.
III-B.3 11:15 Characterization of CdZnTe crystals grown by HPB method: V. Komar1, A. Gektin1, D. Nalivaiko1, I. Klimenko1, V. Migal1, O. Panchuk2, 1STC " Institute for Single Crystals ", SRD " Optical and Constructional Crystals ", 60 Lenin Ave., 310001 Kharkov, Ukraine ; 2University of Chernivtski, Chemistry and Physics Dept, 2 vul. Kotziubinskoho, 274012 Chernivtsi, Ukraine.
III-B.4 11:30 invited Time-resolved PF, TEVS and TSC of CdZnTe radiation detector materials: E.Y. Lee1, R.B. James1, J.L. McChesney1, R.W. Olsen2, H. Hermon3, M. Schieber3, 1Sandia National Laboratories, USA; 2West Virginia University, USA; 3The Hebrew University of Jerusalem, Israel.
  12:00 LUNCH
Tuesday, October 12, 1999
AFTERNOON SESSIONS
SESSION IV. APPLICATIONS IN SPACE
IV.1 2:00 pm invited Applications of semiconductor based X-ray detectors in space research projects: M. Bavdaz, Space Science Department of ESA, ESTEC, PO Box 299, 2200AG Noordwijk, The Netherlands.
IV.2 2:30 invited CdTe based telescopes for X- and gamma-ray astronomy: E. Caroli, N. Auricchio, W. Dusi, J.B. Stephen, Istituto TESRE/CNR, Via Gobetti 101, 40129 Bologna, Italy.
IV.3 3:00 Performance results from CdZnTe and CdTe detector modules developed for the Swift Medium Explorer mission: A.M. Parsons1, S.D. Barthelmy1, L. Barbier1, F. Birsa1, J. Dumonthier1, N. Gehrels1, D. Palmer1,2, M. Smith1, S.J. Snodgrass1,3, C.M. Stahle1, J. Tueller1 and G. Winkert1, 1NASA Goddard Space Flight Center, Greenbelt, MD 20771, USA ; 2Universities Space Research Associates, Greenbelt, MD 20771, USA ; 3Raytheon STX, Greenbelt, MD 20771, USA.
IV.4 3:15 The AGILE silicon tracker: an advanced gamma and X-ray detector for space: M. Prest, on behalf of the AGILE Collaboration (CNR Bologna, CNR Milano, CNR Roma, INFN and University of Rome " Tor Vergata ", INFN and University of Trieste, Italy), INFN Trieste, Laboratori Area di Ricerca, Adriciano 99, 34012 Trieste, Italy.
IV.5 3:30 The X-ray imager on AXO: C. Budtz-Jřrgensen, I. Kuvvetli, V. Reglero, C. Eyles, Danish Space Institute, Juliane Maries Vej 30, 2100 Copenhagen Ř, Denmark.
  3:45 COFFEE BREAK
SESSION V. MATERIALS GROWTH & DETECTORS: OTHER MATERIALS
V.1 4:00 invited X-ray imaging with PbI2 based a-Si :H flat panel detectors: K.S. Shah1, R.A. Street2, Y. Dmitriyev1, P. Bennett1, L. Cirignano1, M. Klugerman1, M.R. Squillante1 and G. Entine1, 1Radiation Monitoring Devices Inc., 44 Hunt Street, Watertown, MA 02472, USA ; 2Xerox Parc, Palo Alto, CA, USA.
V.2 4:30 Fabrication of mercuric iodide radiation detectors: L. van den Berg and R. Vigil, Constellation Technology Corporation, 9887 Bryan Dairy Road, Suite 100, Largo, FL 33777, USA.
V.3 4:45 On technology and performance of SAMO: X- and gamma-ray 32 pixel line detector based on semi-insulating GaAs and InP: F. Dubecký1, J. Darmo1, M. Krempaský1, M. Sekácová1, B. Zat’ko1, V. Necas 2, P.G. Pelfer3, R. Senderák4, M. Somora5 and P. Hudek6, 1Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava 84239, Slovakia; 2Department of Nuclear Physics and Technique, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, Bratislava 81519, Slovakia; 3Department of Physics and INFN, University of Florence, Largo E. Fermi 2, Florence 50125, Italy; 4Institute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava 84238, Slovakia; 5Department of Hybrid Microelectronics, Faculty of Electrical Engineering and Informatics, Technical University, Park Komenského 2, Kocice 04389, Slovakia; 6Institute of Informatics, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava 84237, Slovakia.
V.4 5:00 Investigation on semi-insulating GaAs detectors using laser induced current pulses: E. Bertolucci1, M. Conti1, G. Mettivier2, M. Quattrocchi1, P. Russo1, A. Cola3, F. Quaranta3, L. Vasanelli3, M.G. Bisogni4, U. Bottigli4, M. E. Fantacci4, 1Dipartimento Scienze Fisiche, Univ. Federico II and INFN, Napoli, Italy; 2INFM, Napoli, Italy; 3CNR-IME and INFN, Lecce, Italy; 4Dipartimento di Fisica, Universita' and INFN, Pisa, Italy
V.5 5:15 Electroluminescent-semiconductor X-ray detector: N.A. Vlasenko1, E.Yu. Braylovsky2, P.E. Berdnichenko2, S.V. Berdnichenko2, Ya.F. Kononets1, Yu. A. Tsirkunov3, L.I. Veligura1 and V.P. Kladko1, 1Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 41 Prospekt Nauki, 252028 Kyiv, Ukraine; 2Institute for Nuclear Research, National Academy of Sciences of Ukraine, 47 Prospekt Nauki, 252028 Kyiv, Ukraine; 3Special Technological and Design Office of ISP, NAS of Ukraine, 4 Lisogorskaya, 252028 Kyiv, Ukraine
V.6 5:30 Noise and interpixel dead space studies of GaAs pixellated detectors: L. Abate, E. Bertolucci, M. Conti, M.C. Montesi, P. Russo, Dipartimento di Scienze Fisiche, Universita' di Napoli Federico II and INFN, Napoli, Italy.
     
Wednesday, October 13, 1999
MORNING SESSIONS
SESSION VI-A. SAFEGUARDS AND TREATY VERIFICATION. PORTABLE INSTRUMENTS
VI-A.1 8:30 am invited Performance and applications of portable XRF units based on thermoelectrically cooled semiconductor detectors: A. Markowicz and A. Tajani, International Atomic Energy Agency, Agency’s Laboratories Seibersdorf, 2444 Seibersdorf, Austria .
VI-A.2 9:00 Safeguards verification of short cooling time (< 1 yr.) KANUPP irradiated fueld bundles using room temperature semiconductor detectors.: A. Iqbal1, R.D. Arlt2, A. Birnbaum3, A. Hiermann2, V. Ivanov4 and Kim Sok Su2, 1Karachi Nuclear Power Plant (KANUPP), PO Box 3183, Karachi 75400, Pakistan ; 2International Atomic Energy Agency (IAEA), Vienna, Austria ; 3GBS-Elektronik GmbH, Dresden, Germany ; 4RITEC Ltd, Riga, Latvia.
VI-A.3 9:15 How to process best gamma spectra of CdTe and CdZnTe detectors ?: R. Arlt1, A. Derbin2, A. Khusainov2, V. Muratova2 and O. Mouratov2, 1International Atomic Energy Agency, Wagramerstrasse 5, PO Box 100, 1400 Vienna, Austria ; 2St. Petersburg Nuclear Physics Institute, Gatchina, Russia.
VI-A.4 9:30 Use of CdZnTe detectors to analyze gamma emission of safeguards samples in the field: K.-H. Czock, R. Arlt, International Atomic Energy Agency, Wagramerstrasse 5, PO Box 100, 1400 Vienna, Austria.
VI-A.5 9:45 Characterisation of cadmium zinc telluride detector spectra – Application to the analysis of spent fueld spectra: P. Mortreau and R. Berndt, Joint Research Centre Ispra, ISIS/SaVeTech, Via Fermi, 21020 Ispra (VA), Italy.
VI-A.6 10:00 Isotope identification software for gamma spectra taken with CdZnTe detectors: J. Brutscher1, R. Arlt2 and K.-H. Czock2, 1GBS Elektronik GmbH, Postfach 510119, 01314 Dresden, Germany ; 2International Atomic Energy Agency, Wagramerstrasse 5, PO Box 100, 1400 Vienna, Austria.
  10:15 COFFEE BREAK
SESSION VI-B. SAFEGUARDS AND TREATY VERIFICATION. PORTABLE INSTRUMENTS (continued)
VI-B.1 10:30 invited Gamma spectrometry with CdTe and CdZnTe detectors – Recent achievements in international safeguards applications: M. Aparo, R. Arlt, International Atomic Energy Agency, Wagramerstrasse 5, PO Box 100, 1400 Vienna, Austria.
VI-B.2 11:00 invited Methods for evaluating and analyzing CdTe and CdZnTe spectra: R. Gunnink1 and R. Arlt2, 1Consultant, 4607 Montecarlo Park Court, Fremont, CA 94538, USA ; 2International Atomic Energy Agency, Wagramerstrasse 5, PO Box 100, 1400 Vienna, Austria.
VI-B.3 11:30 Spectrum catalogue of gamma spectra taken with CdTe and CdZnTe detectors: R. Arlt1, M. Aparo1, H. Boeck2, H. Zwickelstorfer2, 1International Atomic Energy Agency, Wagramerstrasse 5, PO Box 100, 1400 Vienna, Austria ; 2Atominstitut der Österreichischen Universitäten, Stadionallee 2, 1020 Vienna, Austria.
VI-B.4 11:45 Improved thermoelectrically cooled X/gamma-ray detectors and electronics: R.H. Redus, A.C. Huber, J.A. Pantazis, Amptek, Inc., 6 De Angelo Dr., Bedford, MA 01730, USA.
VI-B.5 12:00 CVD diamond gamma dose rate monitor for harsch environment: A. Brambilla, D. Tromson, N. Aboud, P. Bergonzo, F. Foulon, LETI (CEA-Technologies Avancées), DEIN/SPE-CEA/Saclay, 91191 Gif-sur-Yvette Cedex, France.
VI-B.6 12:15 Dosimetric applications of charge coupled devices: E.J. Harris, G.J. Royle, M.J. Mooney and R.D. Speller, Department of Medical Physics and Bioengineering, University College London, 11-20 Capper Street, London, WC1E 6JA, UK.
  12:30 LUNCH
Wednesday, October 13, 1999
AFTERNOON SESSIONS
SESSION VII. DETECTOR STRUCTURE & TECHNOLOGY (SINGLE DETECTORS)
VII.1 2:00 pm invited Modeling CdZnTe detectors: T.H. Prettyman, K.D. Ianakiev and M.K. Smith, Los Alamos National Laboratory, Safeguards Science and Technology, MS E540, Los Alamos, NM 87545, USA.
VII.2 2:30 invited Spectroscopic performance of newly designed CdTe detectors: N. Auricchio1, E. Caroli1, A. Donati1, W. Dusi2, P. Fougčres3, M. Hage-Ali4, G. Landini1, E. Perillo5 and P. Siffert4, 1Istituto TESRE/CNR, Via Gobetti 101, 40129 Bologna, Italy; 2Istituto TESRE/CNR and Sezione INFN, Via Gobetti 101, 40129 Bologna, Italy; 3EURORAD II-VI, BP 20, 67037 Strasbourg Cedex 2, France ; 4CNRS/PHASE, BP 20, 67037 Strasbourg Cedex 2, France ;  5Dip. Di Scienze Fisiche, Universitŕ " Federico II " and Sezione INFN, Via Cintia, 80126 Napoli, Italy.
VII.3 3:00 Energy resolution of large square CdTe p-i-n detectors with charge loss correction: A. Kh. Khusainov1, T.A. Antonova1, R. Arlt2, V.V. Lysenko1, R.K. Makhkamov1, V.F. Morozov1 and A.G. Ilves1, 1St. Petersburg Nuclear Physics Institute, Semiconductor Detectors Department, Orlov Grove, Gatchina, 188350 St Petersburg, Russia ; 2International Atomic Energy Agency, Wagramerstrasse 5, PO Box 100, 1400 Vienna, Austria.
VII.4 3:15 Development on 3-D position sensitive semiconductor gamma-ray spectrometers: Z. He, W. Li, G.F. Knoll, D.K. Wehe and Y.F. Du, Department of Nuclear Engineering and Radiological Sciences, The University of Michigan, Ann Arbor, MI 48109, USA.
VII.5 3:30 Influence of detector surface processing on detector performance: A.V. Rybka1, S.A. Leonov1, I.M. Prokhoretz1, A.S. Abyzov1, L.N. Davydov1, D.V. Kutny1, M.S. Rowland2 and C.F. Smith2, 1Institute of Solid State Physics, Material Science & Technology, National Science Centre " Kharkov Institute of Physics & Technology ", 1 Academicheskaya St., 310108 Kharkov, Ukraine ; 2LLNL, USA.
VII.6 3:45 Influence of electrical contacts on charge collection profiles in CdZnTe studied by IBIC: Z. Pastuovic1, M. Jaksic1, R.B. James2, K. Chattopadhyay3, X. Ma3 and A. Burger3, 1R. Boskovic Institute, Zagreb, Croatia ; 2Sandia National Laboratories, Livermore, CA, USA ; 3Fisk University, Nashville, TN, USA.
  4:00 COFFEE BREAK
POSTER SESSION
  4:15- 6:15  
P1 Correlation between spectrometric ability and physical properties of semiconductor detectors: A.S. Abyzov1, L.N. Davydov1, V.E. Kutny1, A.V. Rybka1, M.S. Rowland2 and C.F. Smith2, 1Institute of Solid State Physics, Material Science & Technology, National Science Centre " Kharkov Institute of Physics & Technology ", 1 Academicheskaya St., 310108 Kharkov, Ukraine ; 2LLNL, USA.
P2 HRTEM observations of microcrystals in CdTe melt grown crystal: T.I. Milenov1, V.I. Dimov2, N.G. Khaltakova2, M.M. Gospodinov1, 1Institute of Solid State Physics, Bulgarian Academy of Sciences, 72 Tzarigradsko Chaussee, 1784 Sofia, Bulgaria; 2Central Laboratory of Mineralogy and Crystallography, Bulgarian Academy of Sciences.
P3 Acoustic microscopy investigation of surface & interface of CdTe detectors: T. Randles1, J. Barton1, S. Hearne1, P.V. Kelly1, G.M. Crean1, P. Siffert2, J.M. Koebel2, 1National Microelectronics Research Centre, Lee Maltings, Prospect Row, Cork, Ireland; 2CNRS/PHASE, BP 20, 67037 Strasbourg Cedex 2, France.
P4 Exploration of the Si GaAs based particle detector at temperatures below 300 K: J. Darmo1, F. Dubecký1, B. Za’tko1, P.G. Pelfer2 and V. Necas 3, 1Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava 84239, Slovakia; 2Department of Physics and INFN, University of Florence, Largo E. Fermi 2, Florence 50125, Italy; 3Department of Nuclear Physics and Technique, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, Bratislava 81519, Slovakia.
P5 Development of neutron detector using the surface barrier sensor with polyethylene (n.p) and 10B(n, a) converters: T.F. Madi, M.M. Hamada and C.H. Mesquita, Instituto de Pesquisas Energéticas e Nucleares – IPEN/CNEN-SP, Dep. Aplic. Na Eng. E Indústria – TE, Travessa R, n°400, Cidade Universitária, 05508-900 Săo Paulo, Brazil.
P6 V.E. Kutny1, A.V. Rybka1, A.S. Abyzov1, L.N. Davydov1, V.K. Komar2, M.S. Rowland3 and C.F. Smith3, 1Institute of Solid State Physics, Material Science & Technology, National Science Centre " Kharkov Institute of Physics & Technology ", 1 Academicheskaya St., 310108 Kharkov, Ukraine ; 2STC "ISC", Kharkov, Ukraine ; 3LLNL, USA.
P7 Multi-element, large-volume CdZnTe detectors: C.E. Moss, K.D. Ianakiev, T.H. Prettyman, R.C. Reedy, M.K. Smith and M.R. Sweet, Los Alamos National Laboratory, NIS-6, MS J562, PO Box 1663, Los Alamos, NM 87545, USA.
P8 Comparative radiation-sensitive properties of CdTe and Cd1-xZnxTe1-ySey single crystals grown by vertical modified Bridgman technique: Y.V Bezsmolniy, SE "Bagira" of JSC "Chisty metaly", Research Laboratory, Yubileyna, Box 39, 317000 Svitlovodsk, Ukraine
P9 Long–term stability of CdTe p-i-n detectors: A. Kh. Khusainov, T. A. Antonova, A. G. Ilves, V. V. Lysenko, V. F. Morozov, A. L. Ogorodni, St. Petersburg Nuclear Physics Institute, Semiconductor Detectors Department, Orlov Grove, Gatchina, 188350 St Petersburg, Russia 
P10 Gamma scanning of large volume CdZnTe detectors to map their efficiency: S. Hollenthoner1, R. Arlt2, I. Hartley2, R. Unterweger1, 1IAEA Laboratories, 2444 Seibersdorf, Austria; 2International Atomic Energy Agency, Wagramer Strasse 5, P.O.B. 100, 1400 Vienna, Austria
P11 A contactless, microwave-based radiation detector: G. Tepper1 and J. Losee2, 1Virginia Commonwealth University, Department of Chemical Engineering, 601 West Main Street, Richmond, VA 23284, USA; 2Space and Naval Warfare Systems Center, Code D744, San Diego, CA 92152, USA
P12 High-resolution CdTe nuclear radiation detectors in a new M-p(pi)-n design: Madan Niraula1, Daisuke Mochizuki1, Toru Aoki1, Tasuhiro Tomita2 and Yoshinori Hatanaka1, 1Graduate School of Electric Science and Technology, 3-1-1 Johuku, Hamamatsu 432-8011, Japan; 2Hamamatsu Photonics, Electron Tube R&D Center, 314-5, Shimokanzo, Iwata-gun, Shizuoka Pref., Japan.
P13 Simulation and measurement of pulse height & rise time for electron signals in CZT detectors: influence of material and electronics parameters: F. Mathy, J.P. Bonnefoy, A. Gliere, C. Mestais, L. Verger, LETI (CEA-Technologies Avancées), CEA/GRE, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France
P14 The simplified approach to calculation of influence of µt–products inhomogeneity on charge collection process: V. Ivanov, Ritec Ltd, 23 Aizkraukles St., office 407, 1024 Riga, Latvia
P15 Application of robust fitting analysis techniques to low-resolution spectral data: G.P. Lasche, R.L. Coldwell, Constellation Technology Corporation, Software and Systems, 7887 Bryan Dairy Road, Suite 100, St. Petersburg, FL 33704, USA
P16 Investigation of the peak shape parameter of CdZnTe detectors: I. Hartley, R. Arlt, International Atomic Energy Agency, Wagramer Strasse 5, P.O.B. 100, 1400 Vienna, Austria
P17 CZT detectors fabricated from horizontal and vertical Bridgman grown crystals: H. Hermon1, M. Schieber1,2, R.B. James2, E. Lee2, J.L. McChesney2, A.J. Antolak2, D.H. Morse2, E. Cross2, M. Goorsky3, T. Lam3, T.E. Schlesinger4, M. Greaves4, 1The Hebrew University of Jerusalem, Jerusalem 91904, Israel; 2Sandia National Laboratories, Livermore, CA 94550, USA; 3University of California-Los Angeles, Los Angeles, CA 90024, USA; 4Carnegie Mellon University, Dept of Elec. Eng., Pittsburgh, PA 15213, USA
P18 Multi-electrode detector packaging using polymer flip chip bonding devices: V.T. Jordanov1, J. Macri2, J. Clayton3, 1YANTRA, 12 Cutts Rd., Durham, NH 03824, USA; 2University of New Hampshire, Morse Hall, Durham, NH 03824, USA; 3Polymer Flip Chip Corporation, 5 Fortune Drive, Dillerica, MA 01865, USA
P19 Results from an 8x8 pixellated Imarad CZT detector: W. Li, Z. He, G.F. Knoll, D.K. Wehe, J.E. Berry, Department of Nuclear Engineering and Radiological Sciences, The University of Michigan, Ann Arbor, MI 48109-2104, USA.
P20 Simple a carge loss corrected for CdTe and CdZnTe spectrometric detectors: A.I. Kosse1, V.F. Morozov2, A. Kh. Khusainov2, 1Ural State Technical University, ul. Mira 19, 620002 Ekaterinburg, Russia; 2Petersburg Nuclear Physics Institute, Semiconductor Detectors Department, Orlov Grove, Gatchina, 188350 St Peterburg, Russia.
P21 Portable high resolution gamma spectrometer for nuclear material control: A. Kh. Khusainov1, T.A. Antonova1, R.D. Arlt2, A.V. Derbin1, V.V. Lysenko1, R.K. Makhkamov1, V.N. Muratova1, O.V. Muratov1, D.V. Tytz1, 1Petersburg Nuclear Physics Institute, Semiconductor Detectors Department, Orlov Grove, Gatchina, 188350 St Peterburg, Russia; 2International Atomic Energy Agency, Wagramerstrasse 5, P.O. Box 100, 1400 Vienna, Austria.
P22 Miniature detection probes with CdZnTe detectors: L. Aleksejeva, P. Dorogov, V. Ivanov, A. Loutchansky, E. Mochaev, Ritec Ltd, 23 Aizkraukles St., office 407, 1024 Riga, Latvia.
P23 Gamma-rays and fast neutron responses calculations for personal electronic dosimetry purpose: M. Jung, C. Teisser and P. Siffert, CNRS/PHASE, BP 20, 67037 Strasbourg Cedex 2, France.
P24 Study of CZT detectors for X-ray computed tomography: S. Ricq, F. Glasser, M. Garcin, LETI (CEA-Technologies Avancées), CEA/GRE, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France.
P25 A tongs-like intraoperative ?–probe for specific applications in radioguided oncological surgery: W. Dusi1,2, P. Angelotti2,3, N. Auricchio2, D. Bollini1,4, C. Moroni1,4, M. Ricard5, 1Istituto Nazionale di Fisica Nucleare (INFN), Sez. di Bologna, via Berti Pichat 6/2, 40127 Bologna, Italy; 2Istituto TESRE-CNR, via Gobetti 101, 40129 Bologna, Italy; 3Dipartimento di Fisica, Universitŕ di Parma, Parco Area delle Scienze 7 A, 43100 Parma, Italy; 4Dipartimento di Fisica, Universitŕ di Bologna, via Irnerio 46, 40126 Bologna, Italy; 5Institut "Gustave-Roussy", Service de Physique, 94805 Villejuif Cedex, France.
P26 Enhancement in hot points localization power for a ? –probe to be used in radioassisted oncological surgery: W. Dusi1,2, P. Angelotti2,3, N. Auricchio2, D. Bollini1,4, C. Moroni1,4, M. Ricard5, 1Istituto Nazionale di Fisica Nucleare (INFN), Sez. di Bologna, via Berti Pichat 6/2, 40127 Bologna, Italy; 2Istituto TESRE-CNR, via Gobetti 101, 40129 Bologna, Italy; 3Dipartimento di Fisica, Universitŕ di Parma, Parco Area delle Scienze 7 A, 43100 Parma, Italy; 4Dipartimento di Fisica, Universitŕ di Bologna, via Irnerio 46, 40126 Bologna, Italy; 5Institut "Gustave-Roussy", Service de Physique, 94805 Villejuif Cedex, France.
P27 CZT high energy radiography detector: F. Glasser1, V. Gerbe1, P. Ouvrier-Buffet1, M. Accensi1, J.L. Girard1, J.L. Gerstenmayer2, 1LETI (CEA-Technologies Avancées), CEA/GRE, 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France; 2CEA/DAM/DRIF/DCRE, CEA/Bruyčres le Châtel,BP 12, 91680 Bruyčres le Châtel, France.
P28 The final release of the basic component for the ISGRI CdTe ?-ray camera: O. Limousin1, M. Arques2, J. Crétolle1, F. Lebrun1, J.P Leray1, N. Baffert2, D. Lattard2, JL. Martin2, G. Masson2, A. Noca2, F. Mathy2, JP. Rostaing2, P.Trystram2, P. Villard2, P. Baron3, E. Delagnes3, M. Rouger3, 1CEA/DSM/DAPNIA/ Service d’Astrophysique, CEA/Saclay, 91191 Gif-sur-Yvette Cedex, France; 2CEA/DTA/LETI/Service Capteurs et Systčmes d'Imagerie, CEA/Grenoble, 38054 Grenoble Cedex, France; 3CEA/DSM/DAPNIA/Service d'Electronique et d'Informatique, CEA/Saclay, 91191 Gif-sur-Yvette Cedex, France
P29 Investigation of Au-CdZnTe contacts using photovoltaic measurements: M.A. Hossein, E.J. Morton, A.M.D. Ede and P. DeAntonis, Department of Physics, University of Surrey, GU2 5XH, UK.
P30 Optical studies of CZT materials and radiation detectors: H.W. Yao1,2, R.B. James2, J.C. Erickson1,2, 1University of Nebraska-Lincoln, Electrical Engineering Department, 209 N WSEC, Lincoln, NE 68588-0511, USA; 2Sandia National Laboratories, MS 9405, PO Box 969, Livermore, CA 94550, USA.
P31 Fine focus X-ray generator with total reflexion capillary used in microfluorescence analysis on semiconductors: C. Burggraf1, P. Fougčres2, Y. Roy1, M. Hage-Ali1, A. Krauth1, R. Régal1 and P. Siffert1, 1CNRS/PHASE, BP 20, 67037 Strasbourg Cedex 2, France; 2EURORAD Inc., BP 20, 67037 Strasbourg Cedex 2, France.
P32 Investigation of the electronic properties of cadmium zinc telluride (CZT) detectors using a nuclear microprobe: B.A. Brunett1, B.L. Doyle2, R.B. James1, G. Vizkelethy2,3, D.S. Walsh2, 1Sandia National Laboratories, Livermore, CA 94550, USA ; 2Sandia National Laboratories, Albuquerque, NM, USA; 3Idaho State University, Pocatello, ID, USA.
P33 A novel CCD based EDX detector – the first results: B.G. Lowe1, D.J. Burt2, P.J. Pool3, A.D. Holland4, I.B. Hutchinson4, 1Oxford Instruments, Industrial Analysis Dept, Wyndyke Furlong, Abingdon OX14 1 UJ, UK ; 2EEV; 3University of Leicester, X-ray astronomy group, Leicester LE1 7RH, UK; 4GEC-Marconi.
P34 Bulk semiconductor neutron detectors: F.P. Doty, Sandia National Laboratories, Livermore CA 94550, USA.
P35 Characterization of Li distribution in room temperature Si(Li) detectors: Hiroshi Kume 1, Hideaki Onabe 2, Mitsugu Obinata 3, Toshisuke Kashiwagi4 and Masanori Kurosawa 5, 1Environmental Chemistry Division, National Institute for Environmental Studies; 2Raytech Co., Ltd. ; 3Tohnic Co., Ltd. ; 4 Department of Industrial Engineering and Management, Kanagawa University, 5Institute of Geoscience, The University of Tsukuba, Japan
P36 Pulse shape discrimination system for room-temperature detectors: V. Kondrashov, A. Loupilov and V. Ivanov, Baltic Scientific Instruments, Ganibu dambis 26, PO Box 33, 1005 Riga, Latvia.
P37 Separation of the intrinsic defects in CdTe by laser radiation:A.Medvid’, Laboratory of Semiconductor Physics, Riga Technical University, Azenes Str. 14, 1048, Riga, Latvia.
Thursday, October 14, 1999
MORNING SESSIONS
SESSION VIII. INDUSTRIAL AND SCIENTIFIC APPLICATIONS
  8:30 am Round Table:
What are the perspectives of CdTe & CZT detectors in both industrial & medical applications ?
VIII.1 9:00 invited Recent development of radiation measurement instrument for industrial and medical applications: S. Baba, K. Ohmori, Y. Mito, T. Tanoue, Matushita Industrial Equipment Co., Ltd, Japan.
VIII.2 9:30 Hard X-ray CdTe tomography of tokamak fusion plasmas: Y. Peysson, F. Imbeaux, CEA/DRFC, CEA/Cadarache, 13 Saint-Paul-lez-Durance Cedex, France.
VIII.3 9:45 Monolithic integration of PIN diodes and n-channel double-gate JFET's for room temperature X-ray spectroscopy: G.-F. Dalla Betta1, G.U. Pignatel2, G. Verzellesi2, M. Boscardin1, A. Fazzi3, L. Bosisio4, 1ITC-IRST, Divisione Microsistemi, Loc. Pantč di Povo, 38050 Trento, Italy; 2Dipartimento di Ingegneria dei Materiali, Universitŕ di Trento, Via Mesiano 77, 38050 Trento, Italy; 3Dipartimento di Ingegneria Nucleare, Politecnico di Milano, Via Ponzio 34/3, 20133 Milano, Italy; 4Dipartimento di Fisica e INFN, Universitŕ di Trieste, Via A.Valerio 2, 34127, Trieste, Italy.
VIII.4 10 :00 Silicon drift detectors for high count rate X-ray spectroscopy at room temperature: J. Kemmer1, P. Lechner1, P. Leutenegger1, R. Stötter1, H. Soltau1, U. Weber1, R. Hartmann2, N. Krause2, D. Stötter2, L. Strüder2, C. Fiorini3, A. Longoni3, 1KETEK GmbH, Oberschleissheim, Germany ; 2Max Planck Institut für extraterrestrische Physik, Garching, Germany ; 3Politecnico di Milano, Milano, Italy.
  10:15 COFFEE BREAK
SESSION IX. DETECTORS FOR IMAGING
IX.1 10:30 invited Room temperature semiconductor device configurations: advantages and compromises: M.R. Squillante, Radiation Monitoring Devices, Inc., 44 Hunt St., Watertown, MA 02472, USA.
IX.2 11:00 invited Characterization of HPBM CdZnTe detectors for gamma-ray imaging applications: L. Verger, M. Boitel, M.C. Gentet, R. Hamelin, C. Mestais, F. Mongellaz, J. Rustique, G. Sanchez, LETI (CEA - Technologies Avancées), 17 Rue des Martyrs, 38054 Grenoble Cedex 9, France.
IX.3 11:30 Performance and efficiency of coarsely pixellated CdZnTe gamma-ray detectors: B.A. Brunett1, T.E. Schlesinger2, J.M. Van Scyoc1 and R.B. James1, 1Sandia National Laboratories, Livermore, CA 94550, USA ; 2Carnegie Mellon University, Pittsburgh, PA 15213, USA.
IX.4 11:45 A CdZnTe coplanar-grid detector array for environmental remediation: P.N. Luke, J.S. Lee, H. Yaver, M. Amman, Lawrence Berkeley National Laboratory, MS 70A-3363, 1 Cyclotron Road, Berkeley, CA 94720, USA.
IX.5 12:00 Recent progress in n-type CdZnTe arrays for gamma-ray spectroscopy: Y. Nemirovsky1, G. Asa1, Y. Gorelik1, A. Peyser1, U. El-Hanany2, A. Shahar2 and A. Tsigelman2, 1Dept. of Electrical Engineering, Technion – Israel Institute of Technology, Haifa 32000, Israel; 2 IMARAD Imaging Systems Ltd, PO Box 2489, Rehovot 76124, Israel.
IX.6 12:15 Further studies on the modified two-terminal geometry for CdZnTe detectors: K. Parnham1, C. Szeles1, K.G. Lynn2, T.H. Prettyman3, 1eV PRODUCTS a division of II-VI Inc., Saxonburg, PA 16056, USA; 2Washington State University, Center for Material Science, Pullman, WA 99216, USA; 3Los Alamos National Laboratory, MS E540, Los Alamos, NM 87545, USA.
IX.7 12:30 CdTe detector arrays for imaging applications: Madan Niraula1, Daisuke Mochizuki1, Toru Aoki1, Tasuhiro Tomita2 and Yoshinori Hatanaka1, 1Graduate School of Electric Science and Technology, 3-1-1 Johuku, Hamamatsu 432-8011, Japan; 2Hamamatsu Photonics, Electron Tube R&D Center, 314-5, Shimokanzo, Iwata-gun, Shizuoka Pref., Japan.
  12:45 LUNCH
Thursday, October 14, 1999
AFTERNOON SESSIONS
SESSION X. OTHER MATERIALS AND DETECTORS
X.1 2:00 pm invited Gallium arsenide as substrate with or without integrated electronics for imaging detectors: J. Ludwig, Universität Freiburg, Fakultät für Physik, Hermann-Herder-Strasse 3, 79104 Freiburg in Brsg, Germany.
X.2 2:30 Potential of thick GaAs epitaxial layers for pixel detectors: K. Smith1, R. Bates1, C. Whitehill1, A. Meikle1, M. Hammadi2 and J.C. Boursgoin2; 1Physics Department, The University of Glasgow, Glasgow, G12 8QQ, U.K.; 2Laboratoire des Milieux Désordonnés et Hétérogčnes, Université Pierre et Marie Curie, Paris VI, C.N.R.S., UMR 7603, Tour 22, Case 86, 4 Place Jussieu, 75252 Paris Cedex 05, France.
X.3 2:45 Investigation of performance of semi-insulating detectors irradiated by high gamma doses: V. Necas1, K. Sekácová1, T. Ly Ahn1, A. Perěchová1, J. Darmo2, F. Dubecký2, ; 1Department of Nuclear Physics and Technique, Slovak University of Technology, Ilkovicova 3, Bratislava 81519, Slovakia; 2Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava 84239, Slovakia.
X.4 3:00 Evaluation of a single photon counting pixel system for imaging of low-contrast objects: B. Mikulec1, G. Bisogni2, M. Campbell1, G. DiPasquale2, R. Irsigler3, E. Pernigotti2, C. Schwarz4, J. Watt5, 1CERN, EP Division, 1211 Geneva 23, Switzerland; 2INFN Pisa, Italy; 3IMC, Kista, Sweden; 4University of Freiburg, Germany; 5University of Glasgow, Scotland.
X.5 3:15 CVD diamond coaxial X-ray microdetectors: C. Manfredotti, E. Vittone, F. Fizzotti and A. Lo Giudice, Experimental Physics Department, University of Torino, Via Giuria 1, 10125 Torino, Italy.
X.6 3:30 invited Recent progress in thallium bromide detectors for X- and gamma-ray spectroscopy: K. Hitomi, O. Muroi, T. Shoji, T. Suehiro and Y. Hiratate, Department of Electronics, Tohoku Institute of Technology, Japan.
  4:00 COFFEE BREAK
SESSION XI. FRONT END ELECTRONICS AND IMAGING
XI.1 4:15 invited Micropower and low-noise front-end electronics for X and gamma-ray semiconductor detectors: G. Bertuccio, Dipartimento di Elettronica e Informazione, Politecnico di Milano, P.za L. de Vinci, 32, 20133 Milano, Italy.
XI.2 4:45 On-chip charge amplifier for high resolution, high count rate readout: C. Guazzoni1, A. Fazzi1, P. Lechner2, M. Sampietro1, 1Dipartimento di Elettronica e Informazione, Politecnico di Milano, P.za L. de Vinci, 32, 20133 Milano, Italy ; 2KETEK GmbH, Haimhausen, Germany.
XI.3 5:00 Digital signal processing for CdTe detectors based on a waveform clustering algorithm: H. Takahashi1, L. Zhang1, T. Kurahashi1, D. Fukuda1, M. Nakazawa1, M. Misawa2, 1Department of Quantum Engineering and Systems Science, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan; 2Mechanical Engineering Laboratory, Japan.
XI.4 5:15 invited Noise limits of atom, a 128 channel CMOS readout chip in applications with room temperature high granularity detectors: P.F. Manfredi1,2, L. Ratti2,3, V. Re2,4, N.A. Roe1 and V. Speziali2,3, 1Lawrence Berkely National Laboratory, Berkeley, CA 94720, USA; 2INFN, Sezione di Pavia, 27100 Pavia, Italy; 3Universitŕ di Pavia, Dipartimento di Elettronica, 27100 Pavia, Italy; 4Universitŕ di Bergamo, Dipartimento di Ingneria, 24044 Dalmine, Italy.
XI.5 5:45 invited Development of the readout electronics of pixel detectors for LHC experiments: M. Campbell, CERN, EP Division, 1211 Geneva 23, Switzerland.
Friday, October 15, 1999
MORNING SESSIONS
SESSION XII. IRRADIATED OR ANNEALED MATERIAL AND DETECTOR CHARACTERIZATION (CdTe-CZT)
XII.1 8:30 am invited Irradiation induced defects in CdTe and CdZnTe detectors: A. Cavallini1, B.Fraboni1, N.Auricchio2, E.Caroli2, W.Dusi2, P.Chirco3, M.P.Morigi3, M.Zanarini3, M.Hage-Ali4, P.Siffert4, 1INFM and Dip. Di Fisica, Univ. di Bologna viale Berti Pichat 6/2, 40137 Bologna Italy; 2Ist.TESRE-CNR via Gobetti 101, Bologna Italy; 3Dip. di Fisica, Univ.di Bologna, viale Berti Pichat 6/2, 40137 Bologna Italy; 4CNRS/PHASE, BP 20, 67037 Strasbourg Cedex 2, France.
XII.2 9:00 Post-growth self-doping of CdTe single crystals due to controlled deviation from stoichiometry: V. Lyahovitskaya, L.Chernyak, L. Kaplan and D. Cahen, Weizmann Institute of Science, Rehovot 76100, Israel.
XII.3 9:15 Influence of aftergrowth annealing of CdTe :Cl crystals on electrical characteristics: O.A.Matveev, A.I.Terent’ev, Ioffe Physico-Technical Institute, Russian Academy of Sciences, Politechnicheskaya 26, St. Petersburg 194021, Russia.
  9:30 COFFEE BREAK
SESSION XIII. OTHER MATERIALS AND DETECTORS
XIII.1 9:45 invited Present status and perspectives of the radiation detectors based on InP materials: P.G. Pelfer1, F. Dubecký2, R. Fornari3, J. Darmo2, M. Krempaský2, E. Gombia3, B. Zat’ko3, S. Hasenöhrl1, M. Sekácová2, M. Pikna4, P. Bohácek2 and M. Rucek2, 1Department of Physics and INFN, University of Florence, Largo E.Fermi 2, Florence, 50125 Italy ; 2Institute of Electrical Engineering, Slovak Academy of Sciences, Dubravská cesta 9, 84239 Bratislava, Slovakia; 3MASPEC-CNR, Area delle Scienze 37/A, Fontanini, Parma 43010, Italy ; 4Institute of Physics, Comenius University, Mlynská dolina, Bratislava, 84233, Slovakia.
XIII.2 10:15 Lead iodide film deposition and characterization: L. Fornaro1, E. Saucedo1, L. Mussio1, L. Yerman1, J.-O. Ndap2, K. Chattopadhyay2, X. Ma2 and A. Burger2, 1Radiochemistry Department, Faculty of Chemistry, Montevideo, 11800, Uruguay; 2Center for Photonic Materials and Devices, Department of Physics,Fisk University, Nashville, TN 37208, USA.
XIII.3 10:30 On the development of the compound semiconductor thallium bromide for astrophysics: A. Owens, M. Bavdez, A. Peacok, Space Science Department of ESA, ESTEC, PO Box 299, 2200AG Noordwijk, The Netherlands.
XIII.4 10:45 Role of electrode technology in radiation detectors based on semi-insulating GaAs and InP: F. Dubecký1, J. Darmo1, M. Krempaský1, M. Sekácová1, B. Zat’ko1, V. Necas 2, P.G. Pelfer3, M. Pikna4, R. Senderák5, S. Hlavác5, S. Hasenöhrl3 and M. Rucek1, 1Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava 84239, Slovakia; 2Department of Nuclear Physics and Technique, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, Bratislava 81519, Slovakia; 3Department of Physics and INFN, University of Florence, Largo E. Fermi 2, Florence 50125, Italy; 4Institute of Physics, Comenius University, Mlynská dolina, Bratislava, 84233, Slovakia; 5Institute of Physics, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava 84238, Slovakia.
XIII.5 11:00 Si GaAs based particle detectors at IEE SAS: first imaging results: J. Darmo1, F. Dubecký1, B. Zat’ko1, M. Krempaský1, M. Sekácová1, J. Kvitkovic1, V. Necas2, M. Somora3, PG. Pelfer4, 1Institute of Electrical Engineering, Slovak Academy of Sciences, Dúbravská cesta 9, Bratislava 84239, Slovakia; 2Department of Nuclear Physics and Technique, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Ilkovicova 3, Bratislava 81519, Slovakia ; 3Department of Hybrid Microelectronics, Faculty of Electrical Engineering and Informatics, Technical University of Kocice, Park Komenskeho 2, Kocice, 04389 Slovakia ; 4Department of Physics and INFN, University of Florence, Largo E. Fermi 2, Florence 50125, Italy.
XIII.6 11:15 Development of 3-D silicon photodetectors: C.T. Tull1, J.S. Iwanczyk1, B.E. Patt1, L.R. MacDonald1, C.J. Kenney2 and S.I. Parker2, 1Photon Imaging Inc., 19355 Business Center Dr. #8, Northridge, CA 91324, USA; 2University of Hawaii.
XIII.7 11:30 New large-area, low-capacitance silicon photodetectors: B.E. Patt, J.S. Iwanczyk, C.T. Tull and L.R. MacDonald, 1Photon Imaging Inc., 19355 Business Center Dr. #8, Northridge, CA 91324, USA.
XIII.8 11:45 A silicon drift detector with a p-type JFET integrated in the n-well anode: K. Misiakos, S. Kavadias*, Microelectronics Institute, NCSR "Demokritos", 15310 Athens, Greece; *Present address: IMEC, Kapeldreef 75, 3001 Leuven, Belgium.
XIII.9 12:00 Large area pixellated photon couting X-ray imaging system: G. Iles, S. Thomas, P. Murray, M. Prydderch, P. Seller, Imperial College, Department of Physics, Blackett Laboratory, Prince Consort Road, London, UK.
  12:15 CONCLUSIONS: G.F. KNOLL

[Home Page]