SYMPOSIUM O - Chalcogenide Semiconductors for Photovoltaics

Symposium Organizers:

Daniel LINCOT, CNRS, Lab. d’Electrochimie, Ecole Nationale Supérieure de Chimie de Paris, France

Hans Werner SCHOCK, Inst. for Physical Electronics, Univ. Stuttgart, and Centre for Solar & Hydrogen Energy (ZSW), Germany

David CAHEN , Materials and Interfaces Dept., Weizmann Inst. of Science, Rehovot, Israel

Ersin ÖZSAN, BP Solar, Sunbury on Thames Middlesex, UK

Angus ROCKETT, Coordinated Science Lab. & Dept. Mater. Sci. Engn., University of Illinois, Champagne-Urbana Ill., USA

The assistance provided by

European Commission - DG XII Belgium

Programme de Recherche Interdisciplinaire sur les Technologies pour l'Ecodéveloppement du CNRS (CNRS-ECODEV) France

is acknowledged with gratitude.

Tuesday June 1, 1999 - Morning

Mardi 1^er juin 1999, Matin

Session I : Synthesis - I

Chairperson : Ersin Ozsan

O-I.1	9:00-9:25		ELECTRODEPOSITION OF WINDOW AND BUFFER LAYERS FOR THIN FILM PHOTOVOLTAIC CELLS. D. Gal, D. Lincot and G. Hodes, Dept. of Materials & Interfaces, Weizmann Inst. of Science, Rehovot, 76100, Israel; 2Lab. d’Electrochimie, ENSC de Paris, France
O-I.2	9:25-9:50		STRUCTURAL DYNAMICS IN CdS-CdTe THIN FILMS, K.D. Rogers, D.W. Lane, J.D. Painter, D.A. Wood, Department of Materials & Medical Sciences, Cranfield University, Shrivenham, Swindon, Wilts. UK, M.E. Ozsan, B.P. Solar, Unit 12, Brooklands Close, Sunbury-on-Thames, Middlesex, UK
O-I.3	9:50-10:15		GROWTH OF CIGS THIN FILMS BY COEVAPORATION USING ALKALINE PRECURSORS, M. Bodegard, K. Granath and L. Stolt, Angström Solar Center, Uppsala University, P.O.Box 534, 751 21 Uppsala, Sweden
	10:15-10:45		BREAK

Session II : Synthesis - II

Chairperson: Rommel Noufi

O-II.1	10:45-11:05		MODELLING AND UNDERSTANDING THE DEPOSITION OF WINDOW LAYERS BY CHEMICAL BATH DEPOSITION, P. O’Brien, Department of Chemistry, Imperial College of Science Technology and Medicine, South Kensington London SW7 2AY, UK
O-II.2	11:05-11:25		FLASH EVAPORATION OF CHALCOGENIDE THIN FILMS, R. Diaz, Dpto. Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid, Spain
O-II.3	11:25-11:45		Screening studies for windows by chemical bath deposition, J. Herrero, M.T. Gutiérrez, C. Guillén, M.A. Martínez, A.M. Chaparro and R. Bayon, CIEMAT-DER, Avenida Complutense 22, 28040 Madrid, Spain.
O-II.4	11:45-12:05		MODELLING THE STRUCTURE OF CdS FILMS, P.N. Gibson, EC-JRC, Institute of Health and Consumer Protection, I-21020 Ispra (VA), Italy
O-II.5	12:05-12:45		HETEROEPITAXY OF CuInxSey: A REVIEW OF THE MATERIAL AND INTERFACE PROPERTIES, A.N. Tiwari, F.-J. Haug, M. Krejci, H. Zogg, Thin Film Physics Group, Institute of Quantum Electronics, ETH Zurich, 8005 Zürich, Switzerland
	12:45-14:00		LUNCH

Tuesday June 1, 1999 - Afternoon

Mardi 1^er juin 1999, Après-midi

Poster Session I

14 :00-15 :30

O-PS I/P1	Photoconductivity of textured g-In2Se 3-xtex (0 £ x£ 0.5) thin films, M. Emziane and R. Le Ny, G. P. S. E., Département de physique, Faculté des Sciences, Université de Nantes, France
O-PS I/P2	SURFAFCE TEXTURRIZATION OF ZnTe CRYSTALS AND THIN FILMS, F. Zenia, R. Triboulet, C. Levy-Clement, Laboratoire de Physique des Solides de Bellevue, CNRS-UPR 1332, 92195 Meudon, France and K. Ernst, I. Kaiser, M.C. Lux-Steiner and R. Könenkamp, Hahn-Meitner-Institut Berlin, Glienicker Str. 100, 14109 Berlin, Germany
O-PS I/P3	ELECTRICAL INVESTIGATIONS OF Ag6S3O4 AND Ag8S4O4 COMPOUNDS, T. Gron, University of Silesia, Institute of Physics, ul. Uniwerzytecka 4, 40-007 Katowice, Poland and E. Tomaszewicz and M. Kurzawa, Technical University of Szczecin, Department of Inorganic Chemistry, Al. Piastow42, 71-065 Szczecin, Poland
O-PS I/P4	EXCITED STATEDYNAMICS IN CHALCOGENIDE SEMICONDUCTOR QUANTUM DOTS ADSORBED ON A METAL ELECTRODE, E.P.A.M. Bakkers, J.J. Kelly and D. Vanmaekelbergh, Debye Institute, Utrecht Universtiy, P.O. Box 80000, 3508 TA Utrecht, The Netherland
O-PS I/P5	FULL POTENTIAL LINEARIZEDAUGMENTED PLANE WAVE(FPLAPW) CALCULATION OF THE STRUCTURAL, AND ELECTRONIC PROPERTIES OF BULK PbX SEMICONDUCTORS, Z. Nabi, B. Abbar, N. Amrane, Laboratoire de Physique du Positron, Université Djillali Liabès, Sidi bel Abbès 22000, Algérie
O-PS I/P6	INVESTIGATION OF THIN FILMS OF THE Cu-In- AND CuInS2 SYSTEM, M. Gossla, H.E. Mahnke, Hahn-Meitner-Institut Berlin, Abteilung FD, Glienicker Strasse 100, 14109 Berlin, Germany and H. Metzner, Institut für Festkörperphysik, Friedrich-Schiller-Universität, Max-Wien-Platz 1, 07743 Jena, Germany
O-PS I/P7	PREPARATION OF CuInS2 THIN FILMS BY REACTIVE SPUTTERING, V.A.Savchuk, Institute of Physics of Solids and Semiconductors, P.Brovka 17 Str., 220072 Minsk, Belarus, and H.-L.Hwang and K.-H.Chen, Department of EE, National Tsing Hua University, Hsinchu, Taiwan 30043, R.O.C.
O-PS I/P8	CVT GROWTH OF CuInS2 SINGLE CRYSTALS, V.A.Savchuk, and B.V.Korzoun, Institute of Physics of Solids and Semiconductors, P.Brovka 17 Str., 220072 Minsk, Belarus
O-PS I/P9	COMPOSITION AND STRUCTURE OF CuInS2 FILMS PREPARED BY SPRAY PYROLYSIS, M. Krunks, V. Mikli1, O. Bijakina, H. Rebane, T. Varema, E. Mellikov, Institute of Materials Technology,. Centre for Materials Research, Tallinn Technical University, Ehitajate 5, 19086 Tallinn, Estonia
O-PS I/P10	ELECTRODEPOSITION AND LASER ABLATION TECHNIQUES IN GROWING CdTe and CdxHg1-xTe THIN FILMS, J. Ramiro1, L. Galon 1, E. Garcia Camarero 1, I. Montero 2, Y. Laaziz 3, 1 Departamento de Fisica Aplicada, Facultad de Ciencias, Universidad Autonoma de Madrid, 28049 Madrid, Spain, 2 Instituto de Cienca de materiales, CSIC, Campus de la universidad Autonoma de Madrid, 3 LPSCM, Faculté des Sciences Semlalia, Dept. De Physique BPS/15, 40000 Marrakech, Morocco
O-PS I/P11	EFFECT OF GROWING CONDITIONS ON THE STRUCTURAL PROPERTIES OF CuIn 2Se3.5, CuIn3Se 5 and CuIn5Se8 COMPOUNDS J. M. Merino, S. Mahanty, M. León, R. Díaz, F. Rueda and J. L. Martín de Vidales, Dpto. Física Aplicada, Universidad Autónoma de Madrid, 28049 Madrid, Spain.
O-PS I/P12	Nonstoichiometry and properties of CuInSe2, E. I. Rogacheva, T. V. Tavrina, L. I. Gladkikh, State Polytechnic University ,21, Frunze St., Kharkov 310002,Ukraine
O-PS I/P13	MATHEMATICAL MODELS OF THE EPITAXIAL LAYERS GROWN FROM GASEOUS PHASE IN Cd-Hg-Te, Zn-Te SYSTEMS, G.A.Ilchuk State Technical University "Lvivska Politechnica", 12 Bandery str., Lviv, 290020, Ukraine, B.Yo.Datsko, A.O.Stosyk, R.O.Zabrodsky, Institute for Applied Problems of Mechanics and Mathematics, National Academy of Sciences of Ukraine, 3b Naukova str., Lviv, 290601, Ukraine
O-PS I/P14	ELECTRODEPOSITION OF ULTRASMOOTH CUINSE2 FILMS FROM BINARY MULTILAYERS, A. M. Hermann, M. Mansour and V. Badri, Department of Physics, University of Colorado, Boulder CO 80303, USA
O-PS I/P15	CHARACTERIZATION OF ELECTRODEPOSITED CuInSe2 THIN FILMS AND RELATED MATERIALS, Paula Obreja, Mihaela Ghita, A. Corici, National Institute for Research and Development in Microtechnologies, P. O. Box 38-160, 72225 Bucharest, Romania
O-PS I/P16	ELECTRODEPOSITION OF ZINC OXIDE FROM NON-AQUEOUS SOLUTION, D. Gal, D. Lincot* and G. Hodes, Dept. of Materials & Interfaces, Weizmann Institut of Science, Rehovot, Israel; *Lab. d’Electrochimie, ENSC de Paris, France
O-PS I/P17	ELECTRODEPOSITION OF EPITAXIAL CdSe ON (111) GaAs, H. Cachet, R. Cartes, M. Froment, Physique des Liquides et Electrochimie, UPR 15 CNRS, Université Paris VI, 4 Place Jussieu, 75252 Paris Cedex 05, France
O-PS I/P18	INVESTIGATION OF THE INFLUENCE OF SILVER ON THE GROWTH MECHANISM OF CuInS2, A. Werner, I. Luck, J. Bruns, J. Klaer, D. Bräunig, Glienicker Strasse 100, 14109 Berlin, Germany
O-PS I/P19	HIGHLY ORIENTED WSE2 FILMS, CHARACTERIZATION AND PHOTOVOLTAIC APPLICATION, T. Tsirlina, M. Peisach, R. Tenne, Department of Materials and Interfaces, Weizmann Institute, Rehavot 76100, Israel; A. Mattaeus, S. Tiefenbacher, W. Jaegermann, Abteilung Grenzflchen, Hahn-Meitner-Institut, 14109 Berlin, Germany
O-PS I/P20	IN-SITU RBS ANALYSIS OF CuInSe2, A.G. Chowles, Vista University, P/B X613, Port Elizabeth, South Africa; J.A.A. Engelbrecht, J.H. Neethling, University of Port Elizabeth, PO Box 1600, Port Elizabeth, South Africa and C.C. Theron, National Accelerator Centre, Van Der Graaff Group, Faure, South Africa
O-PS I/P21	THIN FILMS OF N-CDTE ON P-DIAMOND FOR PHOTOVOLTAIC SOLAR CELLS, P. von Huth and R. Tenne, Weizmann Institute of Science, Rehovot, Israel
O-PS I/P22	ELECTROCHEMICAL DEPOSITION OF SnS THIN FILMS, M. Ichimura*, K. Takeuchi, Y. Ono and E. Arai, *Center for Cooperative Research, Department of Electrical and Computer Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan
O-PS I/P23	CDS THIN FILMS PRODUCED BY ELECTROSTATIC SPRAY ASSISTED VAPOUR DEPOSITION, B. Su and K.L. Choy, Department of Materials, Imperial College of Science, Technlogy and Medicine, Prince Consort Road, London SW7 2BP, UK
O-PS I/P24	MOLTEN SALT ROUTE FOR ZnSe HIGH TEMPERATURE ELECTROSYNTHESIS, S. Sanchez, C. Lucas, G.S. Picard, Laboratoire d’ Electrochimie et de Chimie Analytique, E.N.S.C.P., 11 rue Pierre et Marie Curie, 75005 Paris, France
O-PS I/P25	NOVEL DEPOSITON TECHNIQUE FOR COMPOUND SEMICONDUCTORS ON HIGHLY POROUS SUBSTRATES: ILGAR, J. Möller, C.H. Fischer, H.J. Muffler, R. Könenkamp, I. Kaiser, M.C. Lux-Steiner, Hahn-Meitner-Institut, Dept. FH, Glenicker Str. 100, 14109 Berlin, Germany
O-PS I/P26	STUDIES ON THIN FILM CdS/CdTe STRUCTURES, Emil Indrea 1, Adriana Barbu 1, Elisabeth J. Popovici 2, and Lucia P. Curar 2, 1 Institute of Isotopic and Molecular Technology, P. O. Box 700, 3400 Cluj-Napoca, Romania, 2 Institute of Chemistry, Iraluca Ripani, 30 Fontonele, 3400 Cluj-Napoca, Romania
O-PS I/P27	NEW ROUTES FOR ELECTRODEPOSITED CADMIUM TELLURIDE SOLAR CELLS, D. Lincot, C. Lepiller, P. Cowache, J. F. Guillemoles, Ecole Nationale Supérieure de Chimie de Paris, France, N. Gibson, European Join Research Center, Ispra, Italy, E. Özsan, BP Solar, Sunbury, United Kingdom,
O-PS I/P29	COPPER-INDIUM SULFIDE NANOPARTICLES IN THE SOL-GEL DERIVED SILICA FILMS: PREPARATION, OPTICAL PROPERTIES AND PATHWAYS OF APPLICATION, V. S. Gurin, Physico-Chemical Research Institute, Belarusian State University, 220080 Minsk, Belarus; V.B. Prokopenko, I.M. Melnichenko, Gomel State University, Gomel 246699, Belarus; A.A. Alexeenko, Gomel State Technical University, Gomel 246746, Belarus
O-PS I/P30	PHOTOELECTRIC PROPERTIES OF HETEROSTRUCTURES BASED ON THERMOOXIDATED Ga Se AND InSe CRYSTALS, V.P. Savchyn, V.B. Kytsai, Physical Department, Lviv Ivan Franko State University, Dragomanov Street 50, 290005 Lviv, Ukraine
O-PS I/P31	INFLUENCE OF SULPHURON THE ELECTRICAL AND OPTICAL PROPERTIES OF P TYPE CuIn(Sx,Se1-x)2 SINGLE CRYSTALS, B . Eisener, D. Wolf, G. M. Möller, Crystal Growth Laboratory, Dept. Materials Science, WW6, University of Erlangen-Nüremberg, Matensstrafle 7, 91058 Erlangen, Germany
O-PS I/P32	STRUCTURAL ANALYSIS OF Cu 1-xAgxGaSe2 BULK MATERIALS AND THIN-FILMS, M.E. Beck, T. Weiss, S. Fiechter, A. Jäger-Waldau, and M.Ch. Lux-Steiner, Hahn-Meitner-Institut Berlin, Glienicker Straße 100, 14109 Berlin, Germany
O-PS I/P33	PHOTOVOLTAIC PROPERTIES OF HETEROSTRUCTURES BASED ON LEAD SULPHIDE THIN FILMS, G. Khlyap, Pedagogical University, 24 Franko str., Drogobych 293720, Ukraine
O-PS I/P35	STRUCTURAL AND OPTICAL CHARACTERIZATION OF POLYCRISTALLINE Cu(In,Ga)Te2 THIN FILMS, V.F. Gremenok, D.D. Krivolap, I.V. Bodnar, E.P. Zaretskaya, I.A. Victorov, Institute of Physics of Solids and Semiconductors, National Academy of Sciences of Belarus, P.Brovki 17 Street, 220072 Minsk, Belarus and R.W. Martin, Department of Physics and Applied Physics, Strathclyde University, Glasgow, UK
O-PS I/P36	INDUCED PHOTOPLEOCHROISM OF CuInSe2 STRUCTURES OBTAINED BY HEAT-TREATMENT PROCESS, V.Yu. Rud’, State Technical University, Polytekhnicheskaya 29, 195251 St. Petersburg, Russia, Y.V. Rud’, Ioffe Physico-Technical Institute, Polytekhnicheskya 26, 194021 St. Petersburg, Russia and H. W. Schock, Univesitat Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
O-PS I/P37	DEFECT STRUCTURE OF Zn2-2xCux InxS2 MIXED CRYSTAL (ZCIS) FILMS ON GaP AND Si BY PULSED LASER DEPOSITION (PLD), K. Bente1,G. Wagner1, D. Oppermann1, U. Lange1, M. Lorenz2 1Universität Leipzig, Institut für Mineralogie, Kristallographie und Materialwissenschaft, 2 Institut für Experimentelle Physik II, Leipzig, Germany
O-PS I/P38	STUDIES OF POLYCRYSTALLINE CuGaSe2 THIN FILMS OBTAINED BY MOCVD, G. Orsal, N. Romain, M.C. Artaud, S. Rushworth* and S. Duchemin, Centre d'Electronique et de Microoptoélectronique de Montpellier - C.N.R.S UMR 5507, Université Montpellier II - 34095 Montpellier Cedex 05 - France, *Epichem Limited, Power Road, Bromborough, Wirral, L62 3QF, UK
O-PS I/P39	DIRECT ELECTRODEPOSITION OF CuInSe2 THIN FILMS, J. Kois, M. Altosaar, E. Mellikov, Tallinn Technical University, Ehitajate tee 5, Tallinn 19086 Estonia, M. Kemell, H. Saloniemi, M. Ritala, M. Leskelä, University of Helsinki, P.O. Box 55, Helsinki, 00014 Finland
O-PS I/P40	CHARGING AND DISCHARGING OF DEFECT STATES IN CIGS/ZnO JUNCTIONS, A.E. Delahoy and A. Ruppert, Energy Photovoltaics, Inc., 276 Bakers Basin Road, Lawrenceville NJ 08648, USA.
O-PS I/P41	DIFFERENCES OF CuInSe2 THIN FILMS OBTAINED BY ELECTRON BEAM AND FLASH EVAPORATION , S. I. Castanneda, F. Rueda, Dpto. Fisica Aplicada, Universidad Autonoma de Madrid, 28049, Spain
O-PS I/P42	CHEMICAL BATH DEPOSITION OF CHALCOGENIDE SEMICONDUCTORS, D.S. Boyle and P. O’Brien, Department of Chemistry, Imperial College, South Kensington SW7 2AY, UK
O-PS I/P43	REACTION SEQUENCES AND ACTIVATION ENERGIES OF BINARY AND TERNARY SYSTEMS OF CIGS, H. Moore, D. Lolson and R. Noufi, Colorado School of Mines and NREL, Golden, USA

 

15:30-16:00

BREAK

Session III : Synthesis - III

Chairperson:Allen Hermann

O-III.1	16:00-16:20		KINETICS OF CIS-FORMATION STUDIED IN-SITU BY THIN FILM CALORIMETRY, D. Wolf, P. Berwian, G. Mueller, Crystal Growth Laboratory, Dept. of Materials Science WW6, Univrsity of Erlangen-Nuernberg, Martensstrasse 7, 91058 Erlangen, Germany
O-III.2	16:20-16:40		INFLUENCE OF SODIUM ON THE GROWTH OF POLYCRYSTALLINE Cu(In,Ga)Se2 THIN FILMS, D. Braunger and D. Hariskos, Zentrum für Sonnenenergie- und Wasserstoff-Forschung Baden Württemberg, Hessbrühlstrasse 23c, 70565 Stuttgart, Germany, U. Rau and H. W. Schock, Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
O-III.3	16:40-17:00		TEXTURE MANIPULATION OF Cu(In,Ga)Se2 THIN-FILMS, M.A. Contreras, B. Egaas, K. Ramanathan, F. Hasoon and R. Noufi, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden, CO, 80401, USA
	17:00-18:30		Discuss Growth, Syntheses : Low cost, Scale –up A. Delahoy, J. Vedel

Wednesday June 2, 1999 - Afternoon

Mercredi 2 juin 1999, Après-midi

Poster Session II

14 :00-15 :30

O-PS 2/P1	ZnSe THIN FILMS GROWN BY CHEMICAL VAPOUR DEPOSITION (CVD) FOR APPLICATION AS BUFFER LAYER IN CIGS SOLAR CELLS: A. Rumberg, C. Sommerhalter, A. Jäger-Waldau, M.Ch. Lux-Steiner, Glienicker Str. 100, 14109 Berlin, Germany
O-PS 2/P2	SnO2 SUBSTRATE EFFECTS ON THE STRUCTURAL AND MORPHOLOGICAL PROPERTIES OF CHEMICAL BATH DEPOSITED Zn(Se,O) THIN FILMS A.M. Chaparro, M.A. Martínez, C. Guillén, M.T. Gutiérrez and J. Herrero, DER-CIEMAT, Aven. Complutense 22. 28040-Madrid, Spain
O-PS 2/P3	ZINC TELLURIDE AS AN ALTERNATIVE BACKCONTACT OF THE CADMIUM-TELLURIDE THIN FILM SOLAR CELL, G. Leimkühler, A. Abken, R. Reineke-Koch, Institut für Solarenergieforschung GmbH, Sokelantstraße 5, 30165 Hannover, Germany
O-PS 2/P4	SCREENING STUDIES FOR CADMIUM FREE BUFFER LAYERS DEPOSITED BY ATOMIC LAYER EPITAXY FOR COPPER INDIUM DISELENIDE SOLAR CELLS , El Bekkaye Yousfi (1), T. Asikainen(2), D. Lincot(1), (1) Ecole Nationale Supérieure de Chimie de Paris, France, (2) Microchemistry Ltd, Espoo, Finland
O-PS 2/P5	INTERFACE AND WINDOW ENGINEERING FOR COPPER INDIUM DISELENIDE SOLAR CELLS, B. Canava, J.-F. Guillemoles, El Bekkaye Yousfi, D. Lincot, ENSCP, France ; M. Powalla, D. Hariskos, ZSW, Germany ; H. Kerber, H.-W. Schock, IPE, Germany
O-PS 2/P6	ZINC-BASED BUFFER LAYER IN THE Cu(InGa)Se2 THIN FILM SOLAR CELLS, A. Shimizu, S. Chaisitsak, T. Sugiyama, A. Yamada, M. Konagai, Department of Electrical and Electronic Engineering, Tokyo Institute of Technology, 2-12-1 Ohokayama, Meguro-ku, Tokyo 152-8552, Japan
O-PS 2/P7	PHOTOVOLTAIC EFFECT IN SURFACE BARRIER STRUCTURES ON CdTe <VII>BASIS, G.A. Ilchuk, V.O. Ukrainets, N.A. Ukrainets, B.B. Budzan, Department of Physics State University "Lvivs’ka Polyteknika",12 Bandera Str., 290646 Lviv, Ukraine; Yu.V. Rud., A.F. Ioffe, Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg, Russia
O-PS 2/P8	PHOTOVOLTAIC EFFECT ON THE SCHOTTKY BARRIER IN p-CdTe CONTROLED BY TEMPERATURE GRADIENT, S. Vackova, Department of Physics, Faculty of Mechanical Engineering, Czech Technical University, Technicka 4, 16607 Prague 6, Czech Republic, K. Zd’ansky, URE Academy of Scineces, Chaberska 57, Prague 8, Czech Republic and K. Vacek, Department of Physics, Pedagogical Faculty, UJEF, Usti n. Labem, Czech Republic
O-PS 2/P9	Characterising superstrate CIS solar cells with electron beam induced current, J. Rechid, A. Kampmann, R. Reineke-Koch, Institut für Solarenergieforschung GmbH, Sokelantstraße 5, 30165 Hannover, Germany
O-PS 2/P10	BULK DEFECTS INFLUENCE ON PROPERTIES OF CdTe, HgCdTe, and HgTe CRYSTALS, I.V. Kurilo, I.O. Rudyj, M.S. Frugynskyi, Dept. of Semiconductor Electronics, State University "Lviv Polytechnic" 12 Bandera St., Lviv-13 290646, Ukraine, O.I. Vlasenko, Institute of Semiconductor Physics NAS of Ukraine, 45 Prospekt Nauky, Kyiv-28 252620, Ukraine
O-PS 2/P12	THERMOSTABILITY OF PHYSICAL PROPERTIES OF CADMIUM TELLURIDE CRYSTALS, A.V. Savitsky, M.I. Ilashchuk, O.A. Parfenyuk, K.S. Ulyanytsky, V.R. Burachek, Chernivtsi University, 2 Kotsyubynsky st., Chernivtsi 274012, Ukraine; R. Ciach, Z. Swiatek, Institute for Metallurgy and Material Science of Polish Academy of Science, 25 Reymonta St., 30-059 Cracow, Poland and Z. Kuznicki, CNRS, Laboratory PHASE (UPR 292), BP 20, 67037 Strasbourg Cedex 2, France
O-PS 2/P13	MICRORAMAN SCATTERING FROM POLYCRYSTALLINE CuInS2 FILMS: STRUCTURAL ANALYSIS, J. Alvarez-Garcia, J. Marcos-Ruzafa, A. Perez-Rodriguez, A. Romano-Rodriguez, J.R. Morante, Dept. d’Electronica, Universitat de Barcelona, C. Marti i Franques 1, 08028 Barcelona, Spain and R. Scheer, Hahn-Meitner-Institut, Glienicker Str. 100, 14109 Berlin, Germany
O-PS 2/P14	CHARACTERIZATION OF II-IV COMPOUNDS ON POROUS SUBSTRATES, K. Ernst, M. Neumann-Spallart*, M.C. Lux-Steiner and R. Könenkamp, Hahn-Meitner-Institut Berlin, Glienicker Str. 100, 14109 Berlin, Germany, *Laboratoire de Physique des Solides de Bellevue, CNRS-UPR 1332, 92195 Meudon, France
O-PS 2/P15	STRUCTURE MODIFICATIONS IN CHALCOPYRITE SEMICONDUCTORS, Dangsheng Su, W. Neumann, Humboldt University of Berlin, Department of Physics, Invalidenstrasse 110, 10115 Berlin, Germany and M. Giersig, Hahn-Meitner-Institute Berlin GmbH, Glienicker Strasse 100, 14195 Berlin, Germany
O-PS 2/P16	MICROSTRUCTURE OF VARIOUS MOS2 THIN FILMS AS ELECTROCHEMICALLY DEPOSITED AND ANNEALED, A. Albu-Yaron*,**, C. Lévy-Clément*, S. Bastide* and R. Tenne***; *LPSB, CNRS, 1 place Ariside Briand, 92195 Meudon, France; **ARO, Volcani Center, 50250 Bet Dagan, Israel; ***Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, Israel
O-PS 2/P17	PHOTOLUMINESCENCE AND X-RAY FLUORESCENCE MEASUREMENTS OF SUCCESSIVELY THINNED CuGaSe2 FILMS, M. Klenk, O. Schenker, E. Bucher, Universität Konstanz, Fakultät für Physik, Fach X916, 78457 Konstanz, Germany
O-PS 2/P18	NOVEL DEPTH PROFILING IN CDS-CDTE THIN FILMS, J.D. Painter, K.D. Rogers, D.W. Lane, D.A. Wood, Department of Materials & Medical Sciences, Cranfield University, Shrivenham, Swindon, Wilts. UK, M.E. Ozsan, B.P. Solar, Unit 12, Brooklands Close, Sunbury-on-Thames, Middlesex, UK
O-PS 2/P19	CHARACTERIZATION OF CuGaxSey/ZnO FOR SUPERSTRATE SOLAR CELLS, F.J. Haug, M. Krejci, H. Zogg, A.N. Tiwari, Thin Film Physics Group, Institute of Quantum Electronics, ETH Zurich, 8005 Zürich, Switzerland and M. Kirsch, S. Siebentritt, Hahn-Meitner-Institut, Glienicker Str. 100, 14109 Berlin, Germany
O-PS 2/P20	CHARACTERIZATION OF MICROSTRUCTURAL DEFECTS AND INCLUSIONS IN CdS/ CuGaSe2, M. Krejci, F.-J. Haug, H. Zogg, A.N. Tiwari, Thin Film Physics Group, Institute of Quantum Electronics, ETH Zurich, 8005 Zürich, Switzerland and V. Nadenau, D. Hariskos, and H.-W. Schock, Institut für Physikalische Elektronik, Universität Stuttgart, 70569 Stuttgart, Germany
O-PS 2/P21	CHARACTERIZATION OF ELECTRODEPOSITED CdS/CdTe HETEROJUNCTION SOLAR CELLS BY ABSORPTION , REFECTANCE AND PHOTOCURRENT SPECTROSCOPY , N. W. Duffy 1, M. E. Özsan 2, L. M. Peter 1, and R. Wang 1, 1 Department of Chemistry, University of Bath, Bath BA2 7AY, United Kingdom, 2 BP Solar, Unit 12, Brooklands Close, Sunbury on Thames, Middlesex TW 16 7 DX, UK
O-PS 2/P22	ESR AND LESR INVESTIGATIONS OF CuGaSe2, M. Birkholz, P. Kanschat, T. Weiss, K. Lips, Hahn-Meitner Institut, Abt. Photovoltaik, Rudower Chaussee 5, 12489 Berlin, Germany
O-PS 2/P23	A COMPREHENSIVE STUDY OF BEVEL ETCHED CdTe/CdS SOLAR CELLS SUBJECTED TO DIFFERENT CADMIUM CHLORIDE ANNEAL TIMES, M. D. G. Potter, D. P. Halliday, M. Cousins, K. Durose, University of Durham, Department of Physics, Science laboratories, South Road, Durham DH1 3LE, UK
O-PS 2/P24	GRAIN STRUCTURE OF CdTe IN CSS DEPOSITED CdTe/CdS SOLAR CELL DEVICES, M. A. Cousins and K. Durose, University of Durham, Department of Physics, Science laboratories, South Road, Durham DH1 3LE, UK
O-PS 2/P25	LATERAL INHOMOGENEITIES OF Cu(In,Ga)Se2 ABSORBER FILMS, U. Stahl 1, D. Eich 1, U. Herber 1, U. Groh 1, R. Fink 1, E. Umbach 1, W. Riedl 2, 1 Experimentelle Physik II, Universität Würzburg, 97074 Würzburg, 2 Siemens AG, ZFE, Domagkstrafle 11, 80807, München, Germany
O-PS 2/P26	INVESTIGATION OF POST-GROWTH Cu-DIFFUSION IN In-RICH CuInSe2 FILMS, O. Ka, H. Alves, I. Dirnstorfer, T. Christmann, B.K. Meyer, I. Physikalisches Institut, Universität Giessen, 35392 Germany
O-PS 2/P27	CORRELATION BETWEEN SHUNTING CURRENT AND RDLTS SPECTRA IN Cu(In,Ga)Se2-BASED PHOTOVOLTAIC DEVICES, P. Zabierowski and M. Igalson, Institute of Physics, Warsaw University of Technology, Koszykowa 75, 00-660 Warszawa, Poland
O-PS 2/P28	SIMPLE CALCULATION OF THE EBIC EFFICIENCY IN N+P JUNCTION SOLAR CELL TYPE: APPLICATION TO THE (CdS(n+)/ZnSiAs2(p)), M. Derras, A. Kadoun, T. Benbakhti, G. Bassou, H. Gharib, Laboratoire de Microscopie Electronique, Université Djillali Liabès de Sidi Bel Abbès, N° 15 rue Omair Ibn Ouahb, Cité Bab Ed Daya, 22009 Sidi bel Abbès, Algérie
O-PS 2/P29	ELECTROLESS DEPOSITION OF Ni-P AS A BACK CONTACT FOR CdS/CdTe THIN FILM SOLAR CELLS, Ofer Rotlevi, Gary Hodes, Department of Materials and Interfaces, Weizmann Institute of Science, 76100 Rehovot, Israël
O-PS 2/P30	DEVELOPMENT OF A NEW IN-LINE FABRICATION SYSTEM FOR CdS/CdTe SOLAR CELLS, A. Abken, Institut für Solarenergieforschung GmbH, Sokelantstrasse 5, 30165 Hannover, Germany
O-PS 2/P31	PHASE CONSTITUTION AND ELEMENT DISTRIBUTION IN CU-IN-S BASED ABSORBER LAYERS GROWN BY THE CISCUT-PROCESS, M. Winkler, O. Tober, J. Penndorf, K. Szulzewsky, D. Röser, Inst. f. Solartechnologie, Im Technologiepark7, 15236 Frankfurt (Oder), Germany
O-PS 2/P32	SOME ELECTROCHEMICAL SOLUTIONS TO THIN-FILM PV MANUFACTURING ISSUES, S. Menezes, InterPhases Research, P.O.Box 1532, Thousand Oaks CA 91358, USA
O-PS 2/P33	INFLUENCE OF DAMP HEAT ON THE ELECTRICAL PROPERTIES OF CU(IN,GA)SE 2 SOLAR CELLS, M. Schmidt, U. Rau, and H. W. Schock, Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, D. Braunger and R. Schäffler, Zentrum für Sonnenenergie- und Wasserstoff-Forschung, Stuttgart
O-PS 2/P34	DEVICE ANALYSIS METHODS FOR CELL PARAMETERS OF CdTe/CdS SOLAR CELLS, D. Bätzner*, K. Bücher, Fraunhofer ISE, 79100 Freiburg, Germany; *present address, Thin Film Physics, IQE, ETH, Zurich, Switzerland
O-PS 2/P35	THE BACKCONTACT INFLUENCE ON CHARACTERISTICS OF CdTe/CdS SOLAR CELLS, P. Nollet, M. Burgelman and S. Degrave, Universiteit Gent, Elektronica en Informatiesystemen (ELIS), Pietersnieuwstraat 41, 9000 Gent, Belgium.
O-PS 2/P36	Electronic Loss Mechanisms in Chalcopyrite Based Heterojunction Solar Cells, U. Rau, A. Jasenek, and H. W. Schock, Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
O-PS 2/P37	IMPEDANCE MODEL FOR CdTe SOLAR CELLS EXHIBITING CONSTANT PHASE ELEMENT BEHAVIOUR, G. Friesen, E. Dunlop, EC-DG JRC, ESTI, 21020 Ispra (VA), Italy
O-PS 2/P38	LARGE AREA ELECTRODEPOSITION OF Cu(In,Ga)Se2, A. Kampmann, V. Sittinger, J. Rechid and R. Reineke-Koch, Institut für Solarenergieforschung GmbH, Sokelantstr. 5, 30165 Hannover, Germany

 

15:30-16:00

BREAK

Session IV : Windows, Contacts

Chairperson:Enn Mellikov

O-IV.1	16:00-16:20		FABRICATION AND CHARACTERIZATION OF ELECTRODEPOSITED CdS/CdTe HETEROJUNCTION SOLAR CELLS, N.W. Duffy*, K.D. Rogers**, D.W. Lane**, L.M. Peter* and R. Wang*, *Department of Chemistry, University of Bath, Bath BA2 7AY, UK, **Centre for Materials Science and Engineering, Department of Materials and Medical Sciences, Cranfield University, Shrivenham, Swindon SN6 8LA, UK
O-IV.2	16:20-16:40		MICROSTRUCTURE OF ELECTRODEPOSITED CdS/CdTe CELLS, D.R. Johnson, B.P. Solar Technology Centre, 12, Brooklands Close, Sunbury-on Thames, Middlesex, TW16 7DX, UK
O-IV.3	16:40-17:00		BACK CONTACTS TO CSS CdS/CdTe SOLAR CELLS AND STABILITY OF PERFORMANCES, N. Romeo, University of Parma, Dpt. of Physics, Parco Area delle Scienze 7/A, 43100 Parma, Italy
	17:00-18:30		Discussion : Windows & contacts (homo vs. hetero) junctions H.W. Schock, J. Sites

Thursday June 3, 1999 - Morning

Jeudi 3 juin 1999, Matin

Session V : General, Defects, Stability

Chairperson:Roland Scheer

O-V.1	9:00-9:25		GRAIN BOUNDARIES IN SEMICONDUCTORS: ARE THEY SPECIAL INTERFACES, J.H. Werner, Institüt für Physikalische Elektronik, Universitaät Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
O-V.2	9:25-9:50		Electronic Effects of Point Defects in Cu(InxGa1-x)Se2, A. Rockett, University of Illinois Department of Materials Science and Engineering, 1-107 ESB MC-233, 1101 W. Springfield Ave., Urbana, IL 61801 USA
O-V.3	9:50-10:15		Cu(In,Ga)Se2 solar cells: why are they stable?, J.F. Guillemoles, Laboratoire d'Electrochimie et de Chimie Analytique (UMR 7575), ENSCP, 11, rue Pierre et Marie Curie, 75231 Paris Cedex, France
	10:15-10:45		BREAK

Session VI : Characterization

Chairperson:Ken Zweibel

O-VI.1	10:45-11:05		NANO-STRUCTURAL INVESTIGATIONS ON Cd DOPING INTO CIGS THIN FILMS BY CHEMICAL BATH DEPOSITION PROCESS, T. Nakada, Department of Electrical Engineering and electronics, Aoyama Gakuin University, Setagaya-ku, Tokyo 157, Japan
O-VI.2	11:05-11:25		OXYGEN AND SODIUM EFFECTS ON Cu(In,Ga)Se2 FILMS AND SOLAR CELLS, L. Kronik, Dept. of Materials of Interfaces, Weizmann Institute of Science, Rehovoth 76100, Israel.
O-VI.3	11:25-11:45		INTERMIXING AND NA-LOCALIZATION AT THE BURIED CdS/Cu(In,Ga)Se2 INTERFACE, C. Heske1,2, D. Eich1, R. Fink1, E. Umbach1, S. Kakar3, M.M. Grush4, T.A. Callcott4, T. van Buuren5, C. Bostedt5, L.J. Terminello5, F.J. Himpsel6, D.L. Ederer7, R.C.C. Perera8, W. Riedl9, and F. Karg10. 1Experimentelle Physik II, Universität Würzburg, 97074 Würzburg, Germany, 2Advanced Light Source, Berkeley CA 94720, USA, 3UC Davis, Livermore CA 94551, USA, 4University of Tennessee, Knoxville TN 37996, USA, 5LLNL, Livermore CA 94551, USA, 6University of Wisconsin, Madison WI 65500, USA, 7Tulane University, New Orleans LA 70118, USA, 8LBL, Berkeley CA 94720, USA 9Siemens AG and 10Siemens Solar GmbH, 80807 München, Germany
O-VI.4	11:45-12:05		EBIC AND LUMINESCENCE MAPPING OF CdTe/CdS SOLAR CELL, P. R. Edwards, D. P. Halliday and K. Durose, Department of Physics, University of Durham, South Road, Durham, DH1 3LE, UK
O-VI.5	12:05-12:25		TRANSIENT CAPACITANCE SPECTROSCOPY OF DEFECT LEVELS IN CIGS CELLS, M. Igalson, P. Zabierowski, Institute of Physics, Waesaw University of Technology, Koszykowa 79, 00-660 Warszawa, Poland
	12:25-14:00		LUNCH

Thursday June 3, 1999 - Afternoon

Jeudi 3 juin 1999, Après-midi

Poster Session III

14 :00-15 :30

O-PS 3/P1	THIN-FILM WINDOW MATERIALS USED WITH CdTe AS HETEROJUNCTION PARTNERS, M.L. Albor-Aguilera, E. Rojas-Hernandez, H. Hernandez-Contreras, A. Castaneda-Mora, O. Vigil* and G. Contreras Puente, Escuela Superior de Fsica y Matematicas del IPN, 07738 Mexico D.F., Mexico; J. Vidal-Larramendi, Facultad de Fisica, Universidad de La Habana, 43100 La Habana, Cuba; A. Morales-Acevedo and M. Ortega-Lopez, Seccion Electronica del Estado Solido (SEES), Depto Ingenieria Electrica, CINVESTAV-IPN, 07000 Mexico D.F., Mexico; *Permanent address, Facultad de Fisica-IMRE universidad de La Habana, 43100 La Habana, Cuba
O-PS 3/P2	CHEMICAL STABILITY OF BACK CONTACTS TO CdS/CdTe SOLAR CELLS, T. Schmidt, K. Durose, University of Durham, Applied Physics, South Road, Durham DH1 3LE, UK and C. Rothenhäusler, M. Lerch, University of Würzburg, LSC, Röntgenring 11, 97070 Würzburg, Germany
O-PS 3/P3	ELECTRODEPOSITION OF ZnTe FOR PHOTOVOLTAIC CELLS, B. Bozzini, P.L. Cavallotti*, E. Cerri, INFM, Facolta di Ingegneria, Universita di Lecce, v. Arnesano, 73100 Lecce, Italy; *Dipartmento di Chimica Fisica Applicata, Politecnico di Milano, v. Mancinelli 7, 20131 Milano, Italy
O-PS 3/P4	CuIn1-xGaxSe2-BASED PHOTOVOLTAIC CELLS FROM ELECTRODEPOSITED AND ELECTROLESS DEPOSITED PRECURSORS, R.N. Bhattacharva, W. Batchelor and R.N. Noufi, National Renewable Energy Laboratory, 1617 Cole Blvd., Golden CO 80401, USA
O-PS 3/P5	ELECTRON STATES IN PHOTOSENSITIVES COMPOUNDS OF CuInSe 2- TYPE, B. Lukiyanets, R. Hoy, The State University "Lvivska Politekhnika", 12 Bandera Str., 290646 Lviv, Ukraine.
O-PS 3/P6	NATIVE DEFECTS AND NON-STOICHIOMETRY OF CMT AND ZMT SOLID SOLUTIONS, V.M. Glazov, L.M. Pavlova, Department of Physical Chemistry, Moskow Institute of Electronic Engineering, Tech. Univ., 130498 Moscow, Russia
O-PS 3/P7	ANNEALING STUDIES ON CuIn(Ga)Se2: THE INFLUENCE OF GALLIUM, I. Dirnstorfer, W. Burkhard, I. Österreicher, D.M. Hofmann, O. Ka, B.K. Meyer, I. Physical Institute, Heinrich-Buff-Ring 16, 35390 Giessen, Germany and D. Braunger, Institute for Physical Electronics, Pfaffenwaldring 47, 70569 Stuttgart, Germany
O-PS 3/P8	THE ROLE OF DEEP DONOR- DEEP ACCEPTOR COMPLEXES IN CIS-RELATED COMPOUNDS, J. Krustok, J. Raudoja, Tallinn Technical University, Ehitajate tee 5, 19086 Tallinn, Estonia; J.H Schön, Bell Laboratories, 600 Mountain Ave., P.O. Box 636, Murray Hill, NJ 07974-0636, USA; M. Yakushev, Department of Physics, University of Salford, Salford M5 4WT, UK and H. Collan, Optoelectronics Laboratory, Helsinki University of Technology, P.O. Box 3000, 02015 Espoo, Finland
O-PS 3/P9	EFFECT OF THE Ga-CONTENT ON THE DEFECT PROPERTIES OF CuIn1-xGaxSe2 SINGLE CRYSTALS, J.H. Schön, Bell Laboratories, Lucent Technologies, 600 Mountain Ave., P.O. Box 636, Murray Hill, NJ 07974-0636, USA and E. Bucher, Universität Konstanz, Fakultät für Physik, Fach X916, 78457 Konstanz, Germany
O-PS 3/P10	Electronically aCtive Defects in CuGaSe 2 Based Heterojunction Solar Cells, A. Jasenek, U. Rau, V. Nadenau, and H. W. Schock, Institut für Physikalische Elektronik, Universität Stuttgart, Pfaffenwaldring 47, 70569 Stuttgart, Germany
O-PS 3/P11	RECRYSTALLIZATION IN CdTe/CdS, A. Romeo, D. Baetzner, H. Zogg, A.N. Tiwari, Thin Film Physics Group, Institute of Quantum Electronics, ETH Zurich, 8005 Zürich, Switzerland
O-PS 3/P12	DEFECTS IN CuGaSe2 THIN FILMS GROWN BY MOCVD, A. Bauknecht, S. Siebentritt, W. Harneit, S. Brehme, J. Albert, S. Rushworth*, M. Lux-Steiner, Hahn-Meitner-Institut, Glienicker Str. 100, 14109 Berlin, Germany; * Epichem Ltd., Power Road, Bromborough, Wirral L62 3QF, UK
O-PS 3/P13	CONTROL OF Vse-DEFECT LEVELS IN CuInSe2 PREPARED BY RAPID THERMAL PROCESSING OF METALLIC ALLOYS , V. Alberts, J. Bekker, Department of Physics, Rand Africaans University, P. O. Box 524, South Africa, M. J. Witcomb, Electron Microscope Unit, University of the Witwatersrand Private Bag 3, WITS 2050, South Africa, J. H. Shôn, Bell Laboratories, Lucent Technologies, 600 Mountain Avenue, Murray Hill NJ 07974-0636, USA, E . Bucher, Universität of Konstanz, Facultät fur Physik, Postfach X916, 78457, Konstanz, Germany
O-PS 3/P14	STRUCTURE OF EXTENDED DEFECT IN EPITAXIAL CuInS2/Si(111), R. Hunger, D. Su, A. Krost, H. J. Lewerenz, R. Scheer, Bereich Physikalishe Chemie, Hhan-Meitner Institut, Abt. CG, Glienicker Strasse 100, 14109 Berlin, Germany
O-PS 3/P15	KCN ETCHING OF CuS AND CUINS2 FOR THIN FILM SOLAR CELLS, M. Weber, R. Scheer, H. J. LEWERENZ, U. Störkel and H. Jungblut, Bereich Physikalishe Chemie, Hhan-Meitner Institut, Abt. CG, Glienicker Strasse 100, 14109 Berlin, Germany
O-PS 3/P16	ANNEALING OF BULK CRYSTALLINE CdTe UNDER CdCl2 CONTROLLED VAPOR PRESSURE, J. Hiie and V. Valdna, Tallinn Technical Universtiy, 5 Ehitajate Road, 19086 Tallinn, Estonia
O-PS 3/P17	POINT DEFECTS IN Cl AND Na DOPED CdTe MONOGRAIN POWDERS, M. Altosaar, P.E. Kukk, J. Raudoja and E. Mellikov, Tallinn Technical University, Ehitajate tee 5, 19086 Tallinn, Estonia
O-PS 3/P18	Calculation and experimental characterization of the defect physicS in CuInSe2, Jochen Klais, Hans Joachim Möller, TU Bergakademie Freiberg, Inst. für Exp. Phys., Silbermannstr.1, 09596 Freiberg, Germany, David Cahen, Weizmann Inst. of Science, Materials and Interfaces Dept., 76100 Rehovot, Israel
O-PS 3/P19	STABILITY OF p-TYPE CdTe THIN FILMS, V. Valdna, Tallinn Technical Universtiy, 5 Ehitajate Road, 19086 Tallinn, Estonia
O-PS 3/P20	CHEMICAL BATH DEPOSITED Zn(Se,OH)x ON Cu(In,Ga)(S,Se)2 FOR HIGH EFFICIENCY THIN FILM BASED SOLAR CELL: GROWTH KINETICS, ELECTRONIC PROPERTIES, DEVICE PERFORMANCE AND LOSS ANALYSIS, A. Ennaoui1, M. Saad2, M. Ch. Lux-Steiner2, F. Karg3, 1Bereich Physikalische Chemie,Hahn-Meitner-Institut, Abt. CG, 2 Bereich Festkörperphysik, Hahn-Meitner-Institut, Abt. FH. Glienicker Straße 100, 14109 Berlin, Germany 3Siemens Solar GmbH, Postfach 460705
O-PS 3/P21	SOME RESULTS FROM CuGaSe2 SOLAR CELLS PREPARED BY Rapid Thermal Processing, O. Schenker, M. Klenk and E. Bucher, Universität Konstanz, Fakultät für Physik, Fach X916, 78457 Konstanz, Germany
O-PS 3/P22	CURRENT TRANSPORT IN CuInS2:Ga/CdS/ZnO -SOLAR CELLS, I. Hengel, A. Neisser, R. Klenk, M. Ch. Lux-Steiner, Hahn-Meitner-Institut, Glienicker Str.100, 14109 Berlin, Germany
O-PS 3/P23	A STUDY OF THE BACK CONTACTS ON CdTe/CdS SOLAR CELLS, D. Baetzner, A. Romeo, H. Zogg, A.N. Tiwari, Thin Film Physics Group, Institute of Quantum Electronics, ETH Zurich, Technoparkstr.1, 8005 Zurich, Switzerland and R. Wendt, ANTEC GmbH, 65779 Kelkheim, Germany.
O-PS 3/P24	ROLE OF SODIUM AND OXYGEN DOPING ON THE CONDUCTIVITY OF CuInS2 THIN FILMS, R. Scheer, I. Luck, M. Kanis, Bereich Physikalishe Chemie, Hhan-Meitner Institut, Abt. CG, Glienicker Strasse 100, 14109 Berlin, Germany
O-PS 3/P25	THE n-InSe-p-In4 Se3 HETEROJUNCTION AS AN ENERGY CONVERTER, V.M. Katerinchuk, Z.D. Kovalyuk, Material Research Institute, NAN Ukraine, Chernivtsi Department, D.M. Bercha, M. Sznajder, Pedagogical University, Rzeszów, Poland, K.Z. Rushchanskii, Uzhgorod State University
O-PS 3/P26	Effect of Substrate Temperature and DEPOSTION PROFILE ON Evaporated Cu(InGa)Se2 FILMS AND DEVICES, W. Shafarman and Jie Zhu, Institute of Energy Conversion, University of Delaware, Newark, DE 19716, USA
O-PS 3/P27	STUDY OF THE EFFECTS OF GA GRADING IN CuInGaSe2, T. Dullweber, G. Hanna, H. W. Schock, Inst. f. Physikalische Elektronik, Pfaffenwaldring 47, 70569 Stuttgart, Germany, M. A.Contreras and R. Noufi, NREL, 1617 Cole Boulevard, Golden, Colorado 80401, USA
O-PS 3/P28	MEASUREMENTS ON MONOCRYSTALLINE CuInSe2 MATERIAL AND CELLS,C.H. Champness and G. Imbert, Electrical Engineering Dept., McGill University, 3480 University Street, Montreal, Quebec, H3A 2A7, Canada
O-PS 3/P28	THE INFLUENCE OF THE STRUCTURE OF CBD DEPOSITED CdS ON THE PERFORMANCE OF CIS BASED SOLAR CELLS, Antonio F. Cunha, Manuel P. de Azevedo, Roland Seitz, Universidade de Aveiro, Departamento de Fisica, 3810 Aveiro, Portugal
O-PS 3/P29	DOES GRAIN BOUNDARY DIFFUSION DESTABILIZE CdTe SOLAR CELLS, I. Visoly-Fisher, K. Gartsman*, S. Cohen* and D. Cahen, Departments of Materials & Interfaces and *Chemical Services, Weizmann Institute of Science, Rehovot, Israel
O-PS 3/P30	A PL STUDY OF CIGS THIN FILMS IMPLANTATED WITH He AND D IONS, M.V. Yakushev, R.D. Pilkington, A.E. Hill, R.D. Tomlinson, Physics Department, Salford University, M5 4WT Salford, UK; R.W. Martin, Physics Department, Strathclyde University, Glasgow, UK; J. Krustok, Tallinn Technical University, Ehitajate tee 5,Tallinn, Estonia; H.W. Schock, Institut für Physikalische Elektronik, Universität Stuttgart, Germany
O-PS 3/P31	STUDY ON MONOCRYSTALLINE CuInSe2 AND CuIn3Se5, H.P. Wang, I. Shih and C.H. Champness, Electrical Engineering Department, McGill University, 3480 University Street, Montreal, Quebec, H3A 2A7, Canada
O-PS 3/P32	XPS AND RAMAN INVESTIGAIONS OF NITROGEN ION ETCHING OFR DEPTH PROFILIN GO CuInSe2 AND CuGaSe2, K. Otte, G. Lippold, D. Hirsch, A. Schindler, F. Bigl, Institute for Surface Modification, Permoserstr. 15, 04313 Leipzig, Germany
O-PS 3/P33	STRUCTURAL AND ELECTRONIC PROPERTIES OF EPITAXIALLY GROWN CuInS2 FILMS, H. Metzner, Th. Hahn, J.H. Bremer, Institut für Festkörperphysik, Universität Jena, 07743 Jena, Germany; M. Seibt, B. Plikat, IV. Physikalisches Institut, Universität Göttingen, 337073 Göttingen, Germany; I. Dirnstorfer, B.K. Meyer, I. Physikalisches Institut, Universität Giessen, 35392 Giessen, Germany
O-PS 3/P34	SYNCHROTON XRD EVIDENCE FOR Cu MIGRATION IN CuInSe2, L. Kaplan, G. Leitus, F. Frolow*, A. Kvick**, H. Hallak***, D. Cahen, Weizmann Institut of Science, Rehovot, Israel; *also at Tel-Aviv-University, Israel; **ESRF, Grenoble, France; ***Bethlehem University, Palestinian Autonomy
O-PS 3/P35	EXCITATION-STATE SPECTROSCOPY OF AN EFFECTIVE-MASS-LIKE LEVEL IN Cu-RICH CuGaSe2, O. Ka and A. Yamada, Electrotechnical Laboratory, 1-1-4 Umezono, Tsukuba 305, Japan

O-PS 3/P36

PHOTOLUMINESCENCE PROPERTIES OF CuInSe2 THIN FILMS PREPARED BY SEQUENTIAL EVAPORATION, A.W.R. Leitch, Department of Physics, University of Port Elizabeth, PO Box 1600, Prot Elizabeth 6000, South Africa, A.G. Chowles, Department of Physics, Vista University, Port Elizabeth, South Africa and J. Weber, Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, 70569 Stuttgart, Germany

15:30-16:00

BREAK

Session VII : Devices, Modelling

Chairperson: Uwe Rau

O-VII.1	16:00-16:20		LOW COST TECHNIQUES FOR THE PREPARATION OF Cu(In,Ga)(Se,S)2 ABSORBER LAYERS, B. Basol, International Solar Electric Technology (ISET), 8635 Aviation Blvd. Inglewood, CA 90301, USA
O-VII.2	16:20-16:40		HIGH EFFICIENCY CSS CdTe SOLAR CELLS, C.S. Ferekides, D. Marinskiy, V. Viswanathan, B. Tetali, V. Palekis, P. Savaraj and D. L. Morel, University of South Florida, Department of Electrical Engineering, Center for Clean Energy and Vehicles, 4202 E. Fowler Ave., Tampa FL 33620, USA
O-VII.3	16:40-17:00		MODELING POLYCRYSTALLINE SEMICONDUCTOR SOLAR CELLS, M. Burgelman, P. Nollet and S. Degrave, Universiteit Gent, Elektronica en Informatiesystemen (ELIS), Pietersnieuwstraat 41, 9000 Gent, Belgium
	17:00-18:30		Discussion session: Defects, Diffusion, Stability Shigeru Niki, Yves Marfaing

Friday June 4, 1999 - Morning

Vendredi 4 juin 1999, Matin

Session VIII : Manufacturing

Chairperson:Thierry Langlois d’Estaintot

O-VIII.1	9:00-9:25		PROCESSES FOR CHALCOPYRITE BASED CELLS, M.Ch. Lux-Steiner, Hahn-Meitner-Institut Berlin, Glienicker Straße 100, 14109 Berlin, Germany
O-VIII.2	9:25-9:50		SCALING UP ISSUES OF CIGS SOLAR CELLS, B. Dimmler, Würth Solar GmbH & Co. KG, Ludwigsburger Strasse 100, 71672 Marbach am Neckar, Germany and M. Powalla, Zentrum für Sonnenenergie- und Wasserstoff- Forschung (ZSW), Hessbrühlstrasse 21C, 70565 Stuttgart, Germany
O-VIII.3	9:50-10:15		MANUFACTURING OF CSS CdTe SOLAR CELLS, D. Bonnet, ANTEC Solar GmbH, Arnstädter Strasse 22, 99334 Rudisleben, Germany
	10:15-10:45		BREAK
	10:45-12:30		Parallel discussions NEXT GENERATION CELLS ; HIGH EFFICIENCY CONCEPTS, INTERFACE OPTIMISATION ; RECYCLABILITY CIS CdTe L. Kronik, D. Lincot, A. Rockett, A. Tiwari

End of Symposium O