G. COQUERY, R. LALLEMAND, "Failure criteria for long term Accelerated Power Cycling Test linked to electrical turn off SOA on IGBT module. A 4000 hours test on 1200A-3300V module with AlSiC base plate", ESREF'2000, pp. 1665-1670.
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Titre : G. COQUERY, R. LALLEMAND, Failure criteria for long term Accelerated Power Cycling Test linked to electrical turn off SOA on IGBT module. A 4000 hours test on 1200A-3300V module with AlSiC base plate, ESREF'2000, pp. 1665-1670.

Cité dans : [DATA126] ESREF'2000, 11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Dresden, Germany, 2-6 octobre 2000.
Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France.
Cité dans : [DIV334]  Recherche sur les mots clés power cycling of power device, mai 2002.
Cité dans :[PAP360]
Auteur : G. Coquery
Auteur : R. Lallemand

Adresse : Laboratory of New Technologies, INRETS, 2, Avenue du Général Malleret-Joinville 94114 Arcueil, France
Pages : 1665 - 1670
Info : Coquery Lallemand : 4000 heures IGBT testing, Sur les 13 références : ISPSD'2000, ESREF'98, ESREF'99, EPE'99, PCIM'97, ISTFA'95.
Lien : private/COQUERY1.pdf - 423 Ko, 6 pages
Date : 02-06 octobre 2000

Abstract :
With AlSiC base plate technology for big module, the reliability about thermal cycling due to railway traction
is largely improved and the accelerated Power Cycling Test time is increased a lot to reach over 6 months. Then
it appears that these failure indicators as; Rth increasing, Vce increasing, or Iges increasing, must be linked to
the interface behavior (thermal and mechanical) and the full electrical capabilities of the device to switch on and
switch off current and voltage in a converter.
This paper discuss about test methodology and protocol of accelerated Power Cycling Test (PCT), including turn
off Safe Operating Area (SOA) measurement before and after reliability tests in order to evaluate the influence
of the parameters drift Vce, Rth, and gate leakage Iges.
Mainly, PCT and SOA results are presented on 1200A-3300V IGBT module with AlSiC base plate materials
after a 4000 hours test (376000 cycles) on very hard conditions. It is also shown the SOA capability on one IGBT
module with gate leakage failure.



Références : 13
[1] : Jacob P., Held M., Scacco P., Wu W., 1995, "Reliability testing and analysis of IGBT power semiconductor modules", Proceedings of the 20th International Symposium for Testing and Failure analysis, p.319-325.
[2] : Coquery G, Lallemand R, Berg H, Sommer K, Wagner D. and Piton M. Reliability improvement of the soldering thermal fatigue with AlSiC technology on traction high power IGBT modules, European Conference on Power Electronics and Applications, EPE’99, Lausanne, 7-9 September 1999, Vol. 3.
[3] : Berg.H., Wolfgang.E., Advanced IGBT modules for railway traction applications : Reliability testing, ESREF 98, Reliability of Power Devices, Copenhagen, 9 th October 1998.
[4] : Göttert J et al. Insulation voltage test and partial discharge test of 3.3kV IGBT modules. Proc. PCIM'97, Nuremberg, 1997, pp119.
[5] : Franke T, Zaiser G, Otto J, Hondsberg-Riedl and Sommer R. Current and temperature distribution in multi-chip module under inverter operartion. European Conference on Power Electronics and Applications, EPE’99, Lausanne, 7-9 September 1999, Vol.
[6] : Fratelli L, Cascone B, Gianni G and Busato G. Long term reliability testing of HV-IGBT modules in worst case traction operation. ESREF'99, Reliability of Power Devices 10th, Arcachon, October 1999.
[7] : Mitic,G, Beinert.R, Klofac.P, Schultz.H.J, Lefranc.G. Reliability of AlN substrates and their solder joints in IGBT power modules. ESREF 99, Reliability of Power Devices, Bordeaux, October 1999.
[8] : Hamidi A and Coquery G. Contact temperature measurements on chip surface for reliability investigations of high power IGBT modules in traction applications. 3rd European Conference on Interconnection Technology in Electronics, Eupac’98 Nuremberg 15 - 17 June 1998.
[9] : Hamidi.A, Coquery G, Lallemand R, Vales P, Dorkel J M. Temperature measurements and thermal modelling of high power IGBT multichip modules for reliability investigations in traction applications, ESREF'98, Reliability of Power Devices 9th, Copenhagen, October 1998.
[10] : Onuki J, Chonan Y, Komiyama T, Nihei M, Saitou R, Suwa M and Kitano M. A new void free soldering process in large area, High Power IGBT module. ISPSD'2000, Toulouse 2000.
[11] : Bauer F, Kaminski N, Linder S and Zeller H. A high voltage IGBT and diode chip set designed for the 2,8kV DC link level with short circuit capability extending to the maximum blocking voltage. ISPSD'2000, Toulouse 2000.
[12] : Khatir Z and Lefèbvre S. Thermal analysis of high power IGBT modules. ISPSD'2000, Toulouse 2000.
[13] : Hager C, Stuck A, Tronel Y, Zehringer R andFichtner W. Comparison between finite-element and analytical calculations for the lifetime estimation of bond wires in IGBT modules. ISPSD'2000, Toulouse 2000.

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