J.-M. PETER, "Power semiconductors. New devices pursue lower on-resistance, higher voltage operation", PCIM Power Electronics Systems, January 1999, vol. 25, no. 1, pp. 24,26-32.
Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [SHEET010]

Info : INSPEC Answer Number 1 -13/01/200

Titre : J.-M. PETER, Power semiconductors. New devices pursue lower on-resistance, higher voltage operation, PCIM Power Electronics Systems, January 1999, vol. 25, no. 1, pp. 24,26-32.

Cité dans : [DATA004] Recherche sur l'auteur Jean Marie PETER, janvier 2000.
Auteur : Jean-Marie Peter

Source : PCIM Power Electronics Systems vol.25, no.1
Pages : p.24, 26 à 32.
Date : Jan. 1999
Published : by Intertec International,
CODEN : PPESFB
ISSN : 0885-0259
SICI : 0885-0259(199901)25:1L.24:PSDP;1-4
Info : Country of Publication : United States - Language : English

Abstract :
The author describes how the past three years have seen three
advancements in power semiconductors: the IGCT that can replace the
GTO; a drastic reduction of the RDS(on) for the power MOSFET; and
the IEGT that may succeed the IGBT for high voltage applications.

Accession_Number : 1999:6235200

Références : 13 refs.

  [1] :  [PAP158]  -------
  [2] :  [PAP071]  A.A. JAECKLIN, Integration of power components - State of the art and trends, proceeding of EPE'97, Trondheim, 1997, vol. 1, pp. 1.001-1.006.
  [3] : [SHEET115] H. ZELLER, High Power Components. From the State-of-the-Art to Future Trends, PCIM 1998, may 26-28, 1998, NÜRNBERG, GERMANY.
  [4] :  [PAP158]  -------
  [5] : [SHEET113] V.A.K. TEMPLE, MOS Controled Thyristors - A new class of power devices, IEEE Transactions on Electron Devices, vol. ED-33, pp. 1609-1618, 1986
  [6] :  [PAP158]  -------
  [7] :  [PAP158]  -------
  [8] :  [PAP158]  -------
  [9] :  [PAP158]  -------
 [10] :  [PAP158]  -------
 [11] :  [PAP158]  -------
 [12] : [SHEET116] L. LORENZ, K. KANELIS, System solution for consumer drives, PCIM'98 Forum, Hong Kong, October 14 - 15, 1998
 [13] : [SHEET117] H. MATSUDA, New Advanced Power Semiconductors. From the State-of-the-Art to Future Trends, PCIM 1998, may 26-28, 1998, NÜRNBERG, GERMANY.


Mise à jour le lundi 10 avril 2023 à 18 h 59 - E-mail : thierry.lequeu@gmail.com
Cette page a été produite par le programme TXT2HTM.EXE, version 10.7.3 du 27 décembre 2018.

Copyright 2023 : TOP

Les informations contenues dans cette page sont à usage strict de Thierry LEQUEU et ne doivent être utilisées ou copiées par un tiers.
Powered by www.google.fr, www.e-kart.fr, l'atelier d'Aurélie - Coiffure mixte et barbier, La Boutique Kit Elec Shop and www.lequeu.fr.