S. AZZOPARDI, M. TRIVEDI, C. ZARDINI, K. SHENAI, "A Punch-Through IGBT Model Using a Simple Technological Parameters Extraction Method for Two-Dimensional Physical Simulation", EPE'99.

S. AZZOPARDI, M. TRIVEDI, C. ZARDINI, K. SHENAI, "A Punch-Through IGBT Model Using a Simple Technological Parameters Extraction Method for Two-Dimensional Physical Simulation", EPE'99. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP481]

Titre : S. AZZOPARDI, M. TRIVEDI, C. ZARDINI, K. SHENAI, A Punch-Through IGBT Model Using a Simple Technological Parameters Extraction Method for Two-Dimensional Physical Simulation, EPE'99.

Cité dans :[99DIV076] EPE'99, European Conference on Power Electronics and Applications, Lausanne, Suisse, 7-9 septembre 1999.
Cité dans : [DIV289]  Recherche sur l'auteur Christian ZARDINI, juillet 2004.
Cité dans : [DIV432]  Recherche sur l'auteur Stéphane AZZOPARDI, juillet 2004.

Auteur : Azzopardi Stephane, Yokohama National University, Japan.
Auteur : Trivedi Malay, University of Illinois, USA.
Auteur : Zardini Cristian, Université Bordeaux I, France.
Auteur : Shenai Krishna, University of Illinois, USA

Congrès : EPE'99
Date : du 7 au 9 septembre 1999
Lieu : Laussanne, Suisse.
Lien : private/99PP269.pdf - 341 Ko.
Info : simulation of PT : on ne sait pas comment il mesure quoi !
Lien : mailto:azzo@ixl.u-bordeaux.fr
Lien : mailto:trivedi@cascade.eecs.uic.edu

Keywords : Device modelling, Power semiconductor devices, Simulation.

Abstract :
The two-dimensional (2-D) physically-based simulation of power devices gives lots of information
about the dynamic mechanisms which allow to understand the behavior of the devices. But it requires
a lot of technological parameters such as doping, dimension, carrier lifetime of the various layers.
Various destructive analysis methods are available, but they do not allow to keep the device intact.
In this paper, we propose a physical model for Punch-Through IGBT obtained by using a non
destructive parameters extraction method based on simple electrical measurements. Then, most of the
technological parameters can be evaluated. To verify the accuracy of these extracted parameters, a 2-D
IGBT structure is implemented in a 2-D physically-based simulator using the finite element
method. The good matching between simulated and experimental results allows to validate this
parameters extraction method.

Bibliographie

References : 5
[1] : B.J. Baliga, "Power Semiconductor Devices", PWS Publishing Company, Boston, USA, 1996.
[2] : S.M. Sze, "Physics of semiconductor devices", 2nd Edition, Wiley, 1981.
[3] : S. Pendharkar, K. Shenai, "Evaluation of Turn-On Performance of P-i-N Rectifiers and IGBT's Under Zero Voltage Switching", IEEE Transaction on Electron Devices, April 1996, vol.43, no4, pp. 647-654.
[4] : S. Azzopardi, C. Jamet, J.M. Vinassa, C. Zardini, "Dynamics Behaviour of Punch-Through IGBT in Hard-Switching Converters at High Temperature", European Power Electronics Proc. Conf. 1997, vol.4, pp. 1-6.
[5] : SILVACO INTERNATIONAL "ATLAS : 2D Device simulation framework", Santa Clara, CA, Nov. 1997.

  [1] : [LIVRE015] B.J. BALIGA, Power Semiconductor devices, 1996.
  [2] : [LIVRE245] S.M. SZE, Physics of Semiconductor Devices, 2nd Edition, Willey-interscience, 1981.
  [3] :  [PAP158]  -------
  [4] :  [PAP482]  S. AZZOPARDI, C. JAMET, J.-M. VINASSA, C. ZARDINI, Dynamics Behaviour of Punch-Through IGBT in Hard-Switching Converters at High Temperature, European Power Electronics Proc. Conf. 1997, vol.4, pp. 1-6.
  [5] :  [PAP158]  -------

Mise à jour le lundi 10 avril 2023 à 18 h 54 - E-mail : thierry.lequeu@gmail.com
Cette page a été produite par le programme TXT2HTM.EXE, version 10.7.3 du 27 décembre 2018.

Les informations contenues dans cette page sont à usage strict de Thierry LEQUEU et ne doivent être utilisées ou copiées par un tiers.
Powered by www.google.fr, www.e-kart.fr, l'atelier d'Aurélie - Coiffure mixte et barbier, La Boutique Kit Elec Shop and www.lequeu.fr.