A. LINDEMANN, "A New IGBT with Reverse Blocking Capability", EPE'2001.
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Article : [PAP326]

Titre : A. LINDEMANN, A New IGBT with Reverse Blocking Capability, EPE'2001.

Cité dans : [DIV174]  EPE'2001, European Conference on Power Electronics and Applications, Graz, Autriche, 27-28 août 2001.
Auteur : Lindemann Andreas, IXYS Semiconductor GmbH, Germany

Congrés : 9th European Conference on Power Electronics and Applications
Date : du 25 au 29 août 2001
Lien : private/PP00389.pdf - xxx Ko, 12 pages
Adresse : IXYS Semiconductor GmbH
Edisonstrasse 15, D - 68623 Lampertheim
Site : http://www.IXYX.net

Résumé :
A new IGBT has been developed, providing reverse blocking capability.
This feature is needed in various applications, such as in current source inverters, resonant circuits, bidirectional switches or matrix converters.
This paper presents technology of the monolithic chip and its operational behaviour, measured with first samples in typical circuits.

References : 10
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