Thursday, June 7, 13:40-14:55, 10F Room 1001-3

Chairperson: P. Hower, Texas Instruments

                    S. Shinohara, Origin Electric

12.1   Shallow Angle Implantation for Extended Trench Gate Power MOSFETs with Super Junction Structure

          Y. Hattori, T. Suzuki, E. Hayashi, M. Kodama and T. Uesugi

12.2   Characterization of Gate Oxide Degradation Mechanisms in Trench-Gated Power MOSFETS Using the Charge Pumping Technique

          G. Dolny, N. Gollagunta*, S. Suliman*, L. Trabzon*, M. Horn*, O.O. Awadelkarim*, J. Ruzyllo*, S.J. Fonash*, J. Hao, R. Ridley, T. Grebs, J. Zeng and C. Kocon

12.3   Rewrite the Silicon Limit to Compete with Superjunction MOSFETs

          T. Kobayashi, H. Abe, Y. Niimura, T. Yamada, A. Kurosaki, T. Hosem and T. Fujihira