TUESDAY, October 13, 10:00 a.m. - 11:40 a.m
Session #1: Designing In Reliability (DIR) Harry Schafft, NIST, Chair
- DIR-1
- "Thermal Conductance of IC Interconnects Embedded in
Dielectric," J.P. Gill, T.D. Sullivan, and D.L. Harmon of IBM
Microelectronics, Essex Junction, VT
- DIR-2
- "Wafer Level Electromigration Applied to Advance Copper/Low
k Dielectric Process Sequence Integration," Donald Pierce of
Sandia Technologies, Albuquerque, NM; James Educato, Viren Rana
and Dennis Yost of Applied Materials, Santa Clara, CA
- DIR-3
- "Wafer Level Monitoring and Process Optimization for Robust
Via EM Reliability," T. Zhao, C. Shih, J. McCollum, F. Hawley, F.
Issaq, B. Cronquist, R. Lambertson, E. Hamdy of Actel, Sunnyvale, CA;
Z. Yang, C. Chern, M. Liao, G. Say, G. Koh, L. Chan, R. Sundaresan
of Chartered Semiconductor Manufacturing, Singapore
- DIR-4
- "A Study of Stress Voiding Effect on AlSi Metal Bank
Allowed Lifetime for a IC Foundry Fabs," K.P. Lin, C.D. Chang, K.S.
Huang, S.L. Hsu of Taiwan Semiconductor Manufacturing Company
Ltd., Hsin-Chu, Taiwan R.O.C.