Session #3: Contributors to Failure (CTF)
John Suehle, NIST & Prasad Chaparala, National Semiconductor, Co-chairs

CTF-1

"Electric Field and Temperature Acceleration of Quasi-Breakdown Phenomena in Ultrathin Oxides," D. Roy, S. Bruyere and E. Vincent of ST Microelectronics, Crolles, France; G. Ghibaudo of LPSC/ENSERG, Grenoble, France

CTF-2

"A Comprehensive Physical Model of Oxide Wearout and Breakdown Involving Trap Generation, Charging and Discharging," D. Qian and D.J. Dumin of Clemson University, Clemson, SC

CTF-3

"A Preliminary Investigation of the Kinetics of Post-Oxidation Anneal Induced E'-Precursor Formation," J.F. Conley, Jr. and W.F. McArthur of Dynamics Research Corp., Beaverton, OR and P.M. Lenahan of Pennsylvania State University, University Park, PA

CTF-4

"A New Mechanism for Gate Oxide Degradation," Chuan H. Liu of United Microelectronics Corp., Hsin-Chu, Taiwan, R.O.C.; Thomas A. DeMassa of Arizona State University, Tempe, AZ; and Julian J. Sanchez of Intel Corp., Chandler, AZ