The basics of Electromigration with a view towards Cu dual-damascene reliability

      E. T. Ogawa
      Texas Instruments, Inc.

      Dallas, TX USA

      Electromigration (EM) has been a major interconnect reliability concern from the early days of integrated circuit technology. This tutorial will describe EM in the context of Al-based technology and lead into present day concerns and new techniques about assessing interconnect reliability, especially in the case of Cu dual-damascene interconnects. Some topics to be discussed will include the Blech effect, mass transport pathways, and early failure.