 IEE 
Books
IEE 
Books| Properties of crystalline siliconEdited by Robert Hull, University of Virginia, USA | 
| AAS | atomic absorption spectroscopy | 
| AB | antibonding | 
| AC | alternating current | 
| AFM | atomic force microscopy | 
| AM | Austin model | 
| APCVD | atmospheric pressure chemical vapour deposition | 
| APD | antiphase defect | 
| APD | antiphase domain (boundary) | 
| APW | augmented plane wave | 
| ARPES | angle resolved photoemission spectroscopy | 
| ASED | atom superposition and electron delocalisation | 
| BC | bond centred | 
| BCA | binary collision approximation | 
| BDT | brittle-to-ductile transition | 
| BESOI | bond and etchback silicon-on-insulator | 
| BHS | Bachelet-Hamann-Schlueter | 
| BOX | buried oxide | 
| BP | Becke-Perdew | 
| BPS | Burton Prim Slichter | 
| BSD | backside damage | 
| BSF | back surface field | 
| BSOI | bonded silicon-on-insulator | 
| BTE | Boltzmann transport | 
| BZ | Brillouin zone | 
| CB | conduction band | 
| CCD | charge coupled device | 
| CCM | cyclic cluster model | 
| CI | configuration interaction | 
| CITS | current-imaging-tunnelling spectroscopy | 
| CMOS | complementary metal oxide semiconductor | 
| CMP | chemical mechanical polishing | 
| CNDO | complete neglect of differential overlap | 
| CNDO/S | CNDO/spectroscopic | 
| COP | crystal originated particle | 
| COS | corona oxide semiconductor | 
| CPAA | charged particle activation analysis | 
| CPMD | Car-Parrinello molecular dynamics | 
| CPU | central processing unit | 
| C-V | capacitance-voltage | 
| CVD | chemical vapour deposition | 
| CW | continuous wave | 
| CZ | Czochralski | 
| Cz | Czochralski | 
| CZN | cerium zinc nitrate | 
| DAS | dimer adatom stacking fault | 
| DC | direct current | 
| DE-AAS | drop etching atomic absorption spectroscopy | 
| DFT | density functional theory | 
| DF-TB | density functional based tight binding | 
| DHL | dislocation half-loop | 
| DI | de-ionised | 
| 2DLFM | two-dimensional low-frequency motion | 
| DLTS | deep level transient spectroscopy | 
| DMC | diffusion Monte Carlo | 
| 2DNG | two-dimensional nucleation and growth | 
| DO | differential overlap | 
| DQMC | diffusion quantum Monte Carlo | 
| DRAM | dynamic random access memory | 
| DRIE | deep reactive ion etching | 
| DSPE | double solid phase epitaxy | 
| DZ | denuded zone | 
| EBIC | electron-beam-induced current | 
| ECR | electron cyclotron resonance | 
| EELS | electron energy loss spectroscopy | 
| ELID | electrolytic in-process dressing | 
| ELTRAN RTM | epitaxial layer transfer | 
| EMA | effective mass approximation | 
| EMT | effective mass theory | 
| ENDOR | electron nuclear double resonance | 
| EOR | end of range | 
| EPM | empirical pseudopotential model | 
| EPR | electron paramagnetic resonance | 
| ESF | extrinsic stacking fault | 
| ESR | electron spin resonance | 
| ETB | empirical tight binding | 
| FCC | face centred cubic | 
| FD | fully-depleted | 
| FEOL | front end of line | 
| FET | field effect transistor | 
| FFT | fast Fourier transform | 
| FPD | flow pattern defect | 
| FRS | forward recoil scattering | 
| FTIR | Fourier transform infrared | 
| FWHM | full width at half maximum | 
| FWHP | full width at half peak | 
| FZ | floating zone | 
| GEA | gradient expansion approximation | 
| GFA | gas fusion analysis | 
| GGA | generalised gradient approximation | 
| GOI | gate oxide integrity | 
| GSMBE | gas-source molecular beam epitaxy | 
| GTO | Gaussian-type orbital | 
| GW | approximation to the self energy based on the one-electron Green's function G and screened Coulomb interaction W (Hedlin & Lundquist, 1969) | 
| HBT | heterojunction bipolar transistor | 
| HC | high carbon (content) | 
| HEMT | high electron mobility transistor | 
| HF | Hartree-Fock | 
| HFR | Hartree-Fock-Roothaan | 
| HL | high level | 
| HNA | hydrofluoric-nitric-acetic | 
| HREELS | high resolution electron energy loss spectroscopy | 
| HREM | high resolution electron microscopy | 
| HRTEM | high resolution transmission electron microscopy | 
| HSC | Hamann-Schlueter-Chiang | 
| HTEM | high resolution transmission electron microscopy | 
| HTS | high temperature sputtering | 
| HTS | high temperature superconducting | 
| I | self-interstitial | 
| IBAS | ion beam assisted sputtering | 
| IBZ | irreducible Brillouin zone | 
| IC | integrated circuit | 
| IIP3 | input-referred third order intercept point | 
| INDO | intermediate neglect of differential overlap | 
| IPA | isopropyl alcohol | 
| IR | infrared | 
| IRAS | infrared absorption spectroscopy | 
| ISF | intrinsic stacking fault | 
| ITOX | internal thermal oxide/oxidation | 
| I-V | current-voltage | 
| JFET | junction field effect transistor | 
| KB | Kleinman-Bylander | 
| K-K | Kramers-Kronig | 
| kMC | kinetic Monte Carlo | 
| KS | Kohn-Sham | 
| L | longitudinal | 
| LA | longitudinal acoustic | 
| LATID | large-angle-tilt implanted drain | 
| LBIC | laser beam induced current | 
| LC | low carbon (content) | 
| LCAO | linear combination of atomic orbitals | 
| LCGO | linear combination of Gaussian orbitals | 
| LD | low dose | 
| LDA | local density approximation | 
| LDA-PP | local density approximation using pseudopotentials | 
| LDD | lightly doped drain | 
| LDF | local density functional | 
| LED | light emitting diode | 
| LEED | low energy electron diffraction | 
| LEEM | low energy electron microscopy | 
| LET | linear energy transfer | 
| LHeT | liquid helium temperature | 
| LL | low level | 
| LMTO | linear muffin tin orbital | 
| LNA | low noise amplifier | 
| LO | local oscillator | 
| LO | longitudinal optical | 
| LPCVD | low pressure chemical vapour deposition | 
| LPVPE | low pressure vapour phase epitaxy | 
| LRP | limited reaction processing | 
| LSD | local spin density | 
| LSDA | local spin density approximation | 
| LSI | large scale integration | 
| LST | light scattering tomography | 
| LTO | low temperature oxide | 
| LVM | local vibrational mode | 
| MBA | molecular beam allotaxy | 
| MBE | molecular beam epitaxy | 
| MC | Monte Carlo | 
| MCM | molecular cluster model | 
| MCZ | magnetic field-applied Czochralski | 
| MD | molecular dynamics | 
| MEMS | micro electromechanical systems | 
| MESFET | metal-semiconductor field effect transistor | 
| MFD | multiple stacking fault defect | 
| MIM | metal insulator metal | 
| MINDO | modified INDO | 
| MIR | multiple internal reflection | 
| MIT | multiple internal transmission | 
| MIT-IR | multiple internal transmission infrared | 
| ML | monolayer | 
| MLDA | modified local density approximation | 
| MNDO | modified NDDO | 
| MODFET | modulation doped field effect transistor | 
| MOS | metal oxide semiconductor | 
| MOSFET | metal oxide semiconductor field effect transistor | 
| MP | Monkhorst and Pack | 
| M-S | metal-semiconductor | 
| MS | molecular statics | 
| MSPE | monolayer solid phase epitaxy | 
| NAA | neutron activation analysis | 
| ND | new thermal donor | 
| NDDO | neglect of diatomic differential overlap | 
| NDM | negative differential mobility | 
| NDO | neglect of differential overlap | 
| NF | noise figure | 
| NFET | n channel field effect transistor | 
| NI | not indicated | 
| NMOS | n channel metal oxide semiconductor | 
| NMOSFET | n channel | 
| MOSFET NN | nearest neighbour | 
| NNN | next nearest neighbour | 
| ODE | orientation-dependent etch | 
| ODMR | optically detected magnetic resonance | 
| OED | oxidation enhanced diffusion | 
| OIP3 | output-referred third order intercept point | 
| OISF | oxidation induced stacking fault | 
| OME | oxide mediated epitaxy | 
| OPW | orthogonalised plane wave | 
| OSF | oxidation induced stacking fault | 
| OV | oxygen-vacancy (centre) | 
| PACE | plasma assisted chemical etching | 
| PBS | poly-backside seal | 
| PC | photoconductivity | 
| PCD | photoconductivity decay | 
| PDG | phosphorus diffusion gettering | 
| PID | planar interstitial defect | 
| PIMC | path integral Monte Carlo | 
| PL | photoluminescence | 
| PLE | photoluminescence excitation | 
| PM | parametrised model | 
| PMOS | p channel metal oxide semiconductor | 
| PP | pseudopotential | 
| PPPW | pseudopotential plane-wave | 
| PR | piezoresistive | 
| PRDDO | partial retention of diatomic differential overlap | 
| PSG | phosphosilicate glass | 
| PTIS | photothermal ionisation spectroscopy | 
| PV | photovoltaic | 
| PW | Perdew-Wang | 
| PZ | Perdew-Zunger | 
| QP | quasiparticle | 
| RBE | reactive beam epitaxy | 
| RBS | Rutherford backscattering | 
| RE | rare earth | 
| RF | radio frequency | 
| RGA | residual gas analysis | 
| RHEED | reflection high-energy electron diffraction | 
| RIE | reactive ion etching | 
| RMS | root mean square | 
| RPCVD | reduced pressure chemical vapour deposition | 
| RSCE | reverse short-channel effects | 
| RT | room temperature | 
| RTA | rapid thermal anneal | 
| RTCVD | rapid thermal chemical vapour deposition | 
| RTP | rapid thermal processing | 
| RW | Rayleigh wave | 
| SAD | selected area diffraction | 
| SADS | silicide as the doping source | 
| SANS | small angle neutron scattering | 
| SB | Schottky barrier | 
| SBH | Schottky barrier height | 
| SBZ | surface Brillouin zone | 
| SCF | self-consistent field | 
| SCI | surface charge imaging | 
| SCP | surface charge profiling | 
| SDL | stable defect layer | 
| SE | spectroscopic ellipsometry | 
| SEM | scanning electron microscopy | 
| SETB | semi-empirical tight-binding | 
| SEU | single event upset | 
| SF | stacking fault | 
| SFT | stacking fault tetrahedra | 
| SGS | SiGe on sapphire | 
| SIMOX | separation by implantation of oxygen | 
| SIMS | secondary ion mass spectrometry | 
| SOI | silicon-on-insulator | 
| SOS | silicon-on-sapphire | 
| SPE | solid phase epitaxy | 
| SPER | solid phase epitaxial regrowth | 
| SPV | surface photovoltage | 
| SQUID | superconducting quantum interference device | 
| SR | spreading resistance | 
| SRAM | static random access memory | 
| SRH | Shockley-Read-Hall | 
| SRP | spreading resistance profile | 
| STD | shallow thermal donor | 
| STIR | site total indicator reading | 
| STM | scanning tunnelling microscopy | 
| STO | Slater-type orbital | 
| SX-LDA | screened-exchange local density approximation | 
| T | tetrahedral | 
| T | transverse | 
| TA | transverse acoustical | 
| TB | tight binding | 
| TBMD | tight binding molecular dynamics | 
| TBTE | tight-binding total-energy | 
| TCAD | technology computer aided design | 
| TCP | temperature coefficient of piezoresistance | 
| TCR | temperature coefficient of resistance | 
| TD | thermal donor | 
| TD | threading dislocation | 
| TDD | thermal double donor | 
| TED | transient enhanced diffusion | 
| TEM | transmission electron microscopy | 
| TFSOS | thin film silicon on sapphire | 
| TIME | Ti interlayer mediated epitaxy | 
| TO | transverse optical | 
| TR | transmit/receive | 
| TTV | total thickness variation | 
| TXRF | total reflectance X-ray fluorescence | 
| UHV | ultra high vacuum | 
| UHV/CVD | ultra high vacuum chemical vapour deposition | 
| ULSI | ultra large scale integration | 
| USTD | ultra-shallow thermal donor | 
| UV | ultraviolet | 
| V | vacancy | 
| VFF | valence force field | 
| VLPCVD | very low pressure chemical vapour deposition | 
| VLSI | very large scale integration | 
| VMC | variational Monte Carlo | 
| VO | vacancy-oxygen | 
| VPD-AAS | vapour phase decomposition atomic absorption spectroscopy | 
| VPE | vapour phase epitaxy | 
| VWN | Vosko-Wilk-Nusair | 
| WLF | Wannier-like function | 
| XPS | X-ray photoelectron spectroscopy | 
| XRD | X-ray diffraction | 
| XROI | X-ray and optical interferometry | 
| XTEM | cross-sectional transmission electron microscopy | 
| ZDO | zero differential overlap |