IEE
Books
Properties of crystalline siliconEdited by Robert Hull, University of Virginia, USA |
| AAS | atomic absorption spectroscopy |
| AB | antibonding |
| AC | alternating current |
| AFM | atomic force microscopy |
| AM | Austin model |
| APCVD | atmospheric pressure chemical vapour deposition |
| APD | antiphase defect |
| APD | antiphase domain (boundary) |
| APW | augmented plane wave |
| ARPES | angle resolved photoemission spectroscopy |
| ASED | atom superposition and electron delocalisation |
| BC | bond centred |
| BCA | binary collision approximation |
| BDT | brittle-to-ductile transition |
| BESOI | bond and etchback silicon-on-insulator |
| BHS | Bachelet-Hamann-Schlueter |
| BOX | buried oxide |
| BP | Becke-Perdew |
| BPS | Burton Prim Slichter |
| BSD | backside damage |
| BSF | back surface field |
| BSOI | bonded silicon-on-insulator |
| BTE | Boltzmann transport |
| BZ | Brillouin zone |
| CB | conduction band |
| CCD | charge coupled device |
| CCM | cyclic cluster model |
| CI | configuration interaction |
| CITS | current-imaging-tunnelling spectroscopy |
| CMOS | complementary metal oxide semiconductor |
| CMP | chemical mechanical polishing |
| CNDO | complete neglect of differential overlap |
| CNDO/S | CNDO/spectroscopic |
| COP | crystal originated particle |
| COS | corona oxide semiconductor |
| CPAA | charged particle activation analysis |
| CPMD | Car-Parrinello molecular dynamics |
| CPU | central processing unit |
| C-V | capacitance-voltage |
| CVD | chemical vapour deposition |
| CW | continuous wave |
| CZ | Czochralski |
| Cz | Czochralski |
| CZN | cerium zinc nitrate |
| DAS | dimer adatom stacking fault |
| DC | direct current |
| DE-AAS | drop etching atomic absorption spectroscopy |
| DFT | density functional theory |
| DF-TB | density functional based tight binding |
| DHL | dislocation half-loop |
| DI | de-ionised |
| 2DLFM | two-dimensional low-frequency motion |
| DLTS | deep level transient spectroscopy |
| DMC | diffusion Monte Carlo |
| 2DNG | two-dimensional nucleation and growth |
| DO | differential overlap |
| DQMC | diffusion quantum Monte Carlo |
| DRAM | dynamic random access memory |
| DRIE | deep reactive ion etching |
| DSPE | double solid phase epitaxy |
| DZ | denuded zone |
| EBIC | electron-beam-induced current |
| ECR | electron cyclotron resonance |
| EELS | electron energy loss spectroscopy |
| ELID | electrolytic in-process dressing |
| ELTRAN RTM | epitaxial layer transfer |
| EMA | effective mass approximation |
| EMT | effective mass theory |
| ENDOR | electron nuclear double resonance |
| EOR | end of range |
| EPM | empirical pseudopotential model |
| EPR | electron paramagnetic resonance |
| ESF | extrinsic stacking fault |
| ESR | electron spin resonance |
| ETB | empirical tight binding |
| FCC | face centred cubic |
| FD | fully-depleted |
| FEOL | front end of line |
| FET | field effect transistor |
| FFT | fast Fourier transform |
| FPD | flow pattern defect |
| FRS | forward recoil scattering |
| FTIR | Fourier transform infrared |
| FWHM | full width at half maximum |
| FWHP | full width at half peak |
| FZ | floating zone |
| GEA | gradient expansion approximation |
| GFA | gas fusion analysis |
| GGA | generalised gradient approximation |
| GOI | gate oxide integrity |
| GSMBE | gas-source molecular beam epitaxy |
| GTO | Gaussian-type orbital |
| GW | approximation to the self energy based on the one-electron Green's function G and screened Coulomb interaction W (Hedlin & Lundquist, 1969) |
| HBT | heterojunction bipolar transistor |
| HC | high carbon (content) |
| HEMT | high electron mobility transistor |
| HF | Hartree-Fock |
| HFR | Hartree-Fock-Roothaan |
| HL | high level |
| HNA | hydrofluoric-nitric-acetic |
| HREELS | high resolution electron energy loss spectroscopy |
| HREM | high resolution electron microscopy |
| HRTEM | high resolution transmission electron microscopy |
| HSC | Hamann-Schlueter-Chiang |
| HTEM | high resolution transmission electron microscopy |
| HTS | high temperature sputtering |
| HTS | high temperature superconducting |
| I | self-interstitial |
| IBAS | ion beam assisted sputtering |
| IBZ | irreducible Brillouin zone |
| IC | integrated circuit |
| IIP3 | input-referred third order intercept point |
| INDO | intermediate neglect of differential overlap |
| IPA | isopropyl alcohol |
| IR | infrared |
| IRAS | infrared absorption spectroscopy |
| ISF | intrinsic stacking fault |
| ITOX | internal thermal oxide/oxidation |
| I-V | current-voltage |
| JFET | junction field effect transistor |
| KB | Kleinman-Bylander |
| K-K | Kramers-Kronig |
| kMC | kinetic Monte Carlo |
| KS | Kohn-Sham |
| L | longitudinal |
| LA | longitudinal acoustic |
| LATID | large-angle-tilt implanted drain |
| LBIC | laser beam induced current |
| LC | low carbon (content) |
| LCAO | linear combination of atomic orbitals |
| LCGO | linear combination of Gaussian orbitals |
| LD | low dose |
| LDA | local density approximation |
| LDA-PP | local density approximation using pseudopotentials |
| LDD | lightly doped drain |
| LDF | local density functional |
| LED | light emitting diode |
| LEED | low energy electron diffraction |
| LEEM | low energy electron microscopy |
| LET | linear energy transfer |
| LHeT | liquid helium temperature |
| LL | low level |
| LMTO | linear muffin tin orbital |
| LNA | low noise amplifier |
| LO | local oscillator |
| LO | longitudinal optical |
| LPCVD | low pressure chemical vapour deposition |
| LPVPE | low pressure vapour phase epitaxy |
| LRP | limited reaction processing |
| LSD | local spin density |
| LSDA | local spin density approximation |
| LSI | large scale integration |
| LST | light scattering tomography |
| LTO | low temperature oxide |
| LVM | local vibrational mode |
| MBA | molecular beam allotaxy |
| MBE | molecular beam epitaxy |
| MC | Monte Carlo |
| MCM | molecular cluster model |
| MCZ | magnetic field-applied Czochralski |
| MD | molecular dynamics |
| MEMS | micro electromechanical systems |
| MESFET | metal-semiconductor field effect transistor |
| MFD | multiple stacking fault defect |
| MIM | metal insulator metal |
| MINDO | modified INDO |
| MIR | multiple internal reflection |
| MIT | multiple internal transmission |
| MIT-IR | multiple internal transmission infrared |
| ML | monolayer |
| MLDA | modified local density approximation |
| MNDO | modified NDDO |
| MODFET | modulation doped field effect transistor |
| MOS | metal oxide semiconductor |
| MOSFET | metal oxide semiconductor field effect transistor |
| MP | Monkhorst and Pack |
| M-S | metal-semiconductor |
| MS | molecular statics |
| MSPE | monolayer solid phase epitaxy |
| NAA | neutron activation analysis |
| ND | new thermal donor |
| NDDO | neglect of diatomic differential overlap |
| NDM | negative differential mobility |
| NDO | neglect of differential overlap |
| NF | noise figure |
| NFET | n channel field effect transistor |
| NI | not indicated |
| NMOS | n channel metal oxide semiconductor |
| NMOSFET | n channel |
| MOSFET NN | nearest neighbour |
| NNN | next nearest neighbour |
| ODE | orientation-dependent etch |
| ODMR | optically detected magnetic resonance |
| OED | oxidation enhanced diffusion |
| OIP3 | output-referred third order intercept point |
| OISF | oxidation induced stacking fault |
| OME | oxide mediated epitaxy |
| OPW | orthogonalised plane wave |
| OSF | oxidation induced stacking fault |
| OV | oxygen-vacancy (centre) |
| PACE | plasma assisted chemical etching |
| PBS | poly-backside seal |
| PC | photoconductivity |
| PCD | photoconductivity decay |
| PDG | phosphorus diffusion gettering |
| PID | planar interstitial defect |
| PIMC | path integral Monte Carlo |
| PL | photoluminescence |
| PLE | photoluminescence excitation |
| PM | parametrised model |
| PMOS | p channel metal oxide semiconductor |
| PP | pseudopotential |
| PPPW | pseudopotential plane-wave |
| PR | piezoresistive |
| PRDDO | partial retention of diatomic differential overlap |
| PSG | phosphosilicate glass |
| PTIS | photothermal ionisation spectroscopy |
| PV | photovoltaic |
| PW | Perdew-Wang |
| PZ | Perdew-Zunger |
| QP | quasiparticle |
| RBE | reactive beam epitaxy |
| RBS | Rutherford backscattering |
| RE | rare earth |
| RF | radio frequency |
| RGA | residual gas analysis |
| RHEED | reflection high-energy electron diffraction |
| RIE | reactive ion etching |
| RMS | root mean square |
| RPCVD | reduced pressure chemical vapour deposition |
| RSCE | reverse short-channel effects |
| RT | room temperature |
| RTA | rapid thermal anneal |
| RTCVD | rapid thermal chemical vapour deposition |
| RTP | rapid thermal processing |
| RW | Rayleigh wave |
| SAD | selected area diffraction |
| SADS | silicide as the doping source |
| SANS | small angle neutron scattering |
| SB | Schottky barrier |
| SBH | Schottky barrier height |
| SBZ | surface Brillouin zone |
| SCF | self-consistent field |
| SCI | surface charge imaging |
| SCP | surface charge profiling |
| SDL | stable defect layer |
| SE | spectroscopic ellipsometry |
| SEM | scanning electron microscopy |
| SETB | semi-empirical tight-binding |
| SEU | single event upset |
| SF | stacking fault |
| SFT | stacking fault tetrahedra |
| SGS | SiGe on sapphire |
| SIMOX | separation by implantation of oxygen |
| SIMS | secondary ion mass spectrometry |
| SOI | silicon-on-insulator |
| SOS | silicon-on-sapphire |
| SPE | solid phase epitaxy |
| SPER | solid phase epitaxial regrowth |
| SPV | surface photovoltage |
| SQUID | superconducting quantum interference device |
| SR | spreading resistance |
| SRAM | static random access memory |
| SRH | Shockley-Read-Hall |
| SRP | spreading resistance profile |
| STD | shallow thermal donor |
| STIR | site total indicator reading |
| STM | scanning tunnelling microscopy |
| STO | Slater-type orbital |
| SX-LDA | screened-exchange local density approximation |
| T | tetrahedral |
| T | transverse |
| TA | transverse acoustical |
| TB | tight binding |
| TBMD | tight binding molecular dynamics |
| TBTE | tight-binding total-energy |
| TCAD | technology computer aided design |
| TCP | temperature coefficient of piezoresistance |
| TCR | temperature coefficient of resistance |
| TD | thermal donor |
| TD | threading dislocation |
| TDD | thermal double donor |
| TED | transient enhanced diffusion |
| TEM | transmission electron microscopy |
| TFSOS | thin film silicon on sapphire |
| TIME | Ti interlayer mediated epitaxy |
| TO | transverse optical |
| TR | transmit/receive |
| TTV | total thickness variation |
| TXRF | total reflectance X-ray fluorescence |
| UHV | ultra high vacuum |
| UHV/CVD | ultra high vacuum chemical vapour deposition |
| ULSI | ultra large scale integration |
| USTD | ultra-shallow thermal donor |
| UV | ultraviolet |
| V | vacancy |
| VFF | valence force field |
| VLPCVD | very low pressure chemical vapour deposition |
| VLSI | very large scale integration |
| VMC | variational Monte Carlo |
| VO | vacancy-oxygen |
| VPD-AAS | vapour phase decomposition atomic absorption spectroscopy |
| VPE | vapour phase epitaxy |
| VWN | Vosko-Wilk-Nusair |
| WLF | Wannier-like function |
| XPS | X-ray photoelectron spectroscopy |
| XRD | X-ray diffraction |
| XROI | X-ray and optical interferometry |
| XTEM | cross-sectional transmission electron microscopy |
| ZDO | zero differential overlap |