IEE Books

Properties of crystalline silicon

Edited by Robert Hull, University of Virginia, USA

INTRODUCTION

This volume collects fundamental physical and materials data for crystalline silicon into a single, authoritative source. The scope of the volume ranges from fundamental electronic and optical properties of silicon, through mechanical, thermal and defect properties, to crystal growth, doping and interfaces with other technologically important materials (note that silicon-based heterostructures, silicon carbide and metal silicides are covered in other EMIS volumes from INSPEC, while volumes on silicon oxides are planned).

The material is organized into individual "Datareviews", each authored by an expert in that particular field. Sets of Datareviews are then collected into chapters, each edited by an internationally recognized authority. The previous EMIS book, Properties of silicon (INSPEC, 1988) is widely used in academic and engineering laboratories and it is our hope that this volume will serve as a substantially enhanced and updated reference source for scientists, engineers and technical managers doing research into silicon-based materials and structures, or working with silicon technology.

The volume editor would like to thank the 100 authors and 18 chapter editors who have contributed their time and expertise to this project. In addition, he would like to recognize the outstanding support provided by John Sears, the managing editor of the EMIS Datareviews series. Acknowledgement should also be given to the careful, detailed MS preparation and indexing work of Pamela Sears and to Dr Peter Capper for copy editing and typesetting such a diversity of MSS to achieve the structural integrity and homogeniety needed for a reference work of this kind.

Robert Hull
University of Virginia
May 1999

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