Article : [SHEET379]

Info : INSPEC Answer Number 4, le 19/06/2000.

Titre : Influence of the gate drive on avalanche process in GTO's snubberless turn-off operations.

Cité dans : [DATA146] LTN, Laboratoire des Technologies Nouvelles, INRETS, Arcueil, France.

Source : 2nd International Seminar on Power Semiconductors, ISPS '94 Proceedings
Editors : Benda, V. Prague, Czech Republic: Czech Tech. Univ. Prague, 1994. p.97-104 of 207 pp. 5 refs.
Conference : Prague, Czech Republic, 31 Aug-2 Sept 1994
Sponsor : IEE
Document_Type : Conference Article
Treatment_Code : Theoretical; Experimental
Info : Country of Publication : Czech Republic
Language : English
Stockage :

Abstract :
The avalanche mechanism during the snubberless turn-off process of
the GTO thyristor has been studied on the basis of experimental
measurements in combination with numerical simulations. It has been
shown that in chopper circuits and under an inductive load, a
"self-controlled" avalanche process takes place with a
characteristic voltage waveform. In particular, the gate drive does
not only influence the storage period of the transient process but
also the rate of rise of anode voltage and the level of generated
avalanche current. For small devices, thermal stresses may be
reduced owing to hard drive conditions which lower voltage rise
delay time and consequently turn-off losses.

Accession_Number : 1995:4917505

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