S. AZZOPARDI, J.-M. VINASSA, C. ZARDINI, "Behaviour of Fast and Ultra-Fast 600V Punch-Through IGBT under Unclamped Inductive Switching Stress", EPE'99.

S. AZZOPARDI, J.-M. VINASSA, C. ZARDINI, "Behaviour of Fast and Ultra-Fast 600V Punch-Through IGBT under Unclamped Inductive Switching Stress", EPE'99. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP479]

Titre : S. AZZOPARDI, J.-M. VINASSA, C. ZARDINI, Behaviour of Fast and Ultra-Fast 600V Punch-Through IGBT under Unclamped Inductive Switching Stress, EPE'99.

Cité dans :[99DIV076] EPE'99, European Conference on Power Electronics and Applications, Lausanne, Suisse, 7-9 septembre 1999.
Cité dans : [DIV289]  Recherche sur l'auteur Christian ZARDINI, juillet 2004.

Auteur : S. Azzopardi
Auteur : J.M. Vinassa
Auteur : C. Zardini

Adresse : Laboratoire I.X.L. - UMR 5818 - ENSERB - Université Bordeaux 1 - 351 Cours de la Libération - 33405 Talence Cédex - FRANCE
Tel. : +33 5 56842804
Fax. : +33 5 56371545
Lien : mailto:azzo@ixl.u-bordeaux.fr
Congrès : EPE'99
Date : du 7 au 9 septembre 1999
Lieu : Laussanne, Suisse.
Lien : private/99PP268.pdf - 332 Ko, 6 pages.

Keywords : Device characterisation, Power semiconductor devices.

Abstract :
In this paper, we investigate the behavior of Fast and Ultra-Fast 600V Punch-Through IGBT under
Unclamped Inductive Switching stress. These high stress conditions occur when the freewheeling
diode fails. As a consequence, the device is submitted to high current and high voltage
simultaneously. In order to investigate the behaviour of Fast and Ultra-Fast 600V Punch-Through
IGBT, we propose to analyze the effect of the peak collector current and the temperature values.
Under the chosen test conditions, the results show on one hand that the temperature influences the
dynamic breakdown voltage value and also the collector-emitter voltage shape and on the other hand,
that the Ultra-Fast 600V Punch-Through IGBT presents a higher ruggedness than the Fast 600V
Punch-Through IGBT.

Bibliographie

References : 8
[1] : B.J. Baliga, "Power Semiconductor Devices", PWS Publishing Company, USA, 1996.
[2] : M. Trivedi, K. Shenai, "Turn-Off in IGBT Safe Operating Area and Performance Parameters" Proc. of IEEE IAS, 1997, pp.949-954.
[3] : R.R. Stoltenburg, "Boundary of Power MOSFET, Unclamped Inductive Switching (UIS), Avalanche Current Capability", Proc. of IEEE APEC, March 1989, pp.359-364.
[4] : K. Fischer, K. Shenai, "Dynamics of Power MOSFET Switching under Unclamped Inductive Loading Conditions", IEEE Transactions on Electron Devices, vol.43, no.6, June 1996, pp.1007-1015.
[5] : S. Azzopardi, C. Jamet, J.M. Vinassa, C. Zardini ,"Switching Performances Comparison of 1200V Punch-Through and Non Punch-Through IGBTs under Hard-Switching at High Temperature", Proceedings of the IEEE Power Electronics Specialist Conference (PESC), Fukuoka (Japan), 17-22 May 1998, pp.1201-1207.
[6] : S. Pendharkar, K. Shenai, "Electro-thermal Simulations in PT- and NPT-IGBT", IEEE Transactions on Electron Devices, vol.45, no.10, October 1998, pp.2222-2231.
[7] : S. Azzopardi, J.M. Vinassa, C. Zardini, "Analysis of the Turn-Off Failure Mechanism of IGBT under Unclamped Inductive Switching", submitted to IEEE Transactions on Electron Devices.
[8] : S. Azzopardi, J.M. Vinassa, C. Zardini, "Performance of 1200V Punch-Through and Non Punch-Through IGBTs under Unclamped Inductive Switching", accepted to the IEEE International Conference on Power Electronics and Drives Systems (PEDS), Hong-Kong, 26-29 July 1999.

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