J.V. MANCA, W. WONDRAK, W. SCHAPER, K. CROES, J. D’HAEN, W. DE CEUNINCK, B. DIEVAL, H.L. HARTNAGEL, M. D’OLIESLAEGER, L. DE SCHEPPER, "Reliability aspects of high temperature power MOSFETs", ESREF'2000.

J.V. MANCA, W. WONDRAK, W. SCHAPER, K. CROES, J. D’HAEN, W. DE CEUNINCK, B. DIEVAL, H.L. HARTNAGEL, M. D’OLIESLAEGER, L. DE SCHEPPER, "Reliability aspects of high temperature power MOSFETs", ESREF'2000. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP432]

Titre : J.V. MANCA, W. WONDRAK, W. SCHAPER, K. CROES, J. D’HAEN, W. DE CEUNINCK, B. DIEVAL, H.L. HARTNAGEL, M. D’OLIESLAEGER, L. DE SCHEPPER, Reliability aspects of high temperature power MOSFETs, ESREF'2000.

Cité dans : [DATA126] ESREF'2000, 11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Dresden, Germany, 2-6 octobre 2000.
Cité dans : [DIV366]  Recherche sur l'auteur Kristof CROES, octobre 2002.
Cité dans :[PAP360]

Auteur : J.V. Manca (a)
Auteur : W. Wondrak (b)
Auteur : W. Schaper (b)
Auteur : K. Croes (a)
Auteur : J. D’Haen (a)
Auteur : W. De Ceuninck (a)
Auteur : B. Dieval (c)
Auteur : H. L. Hartnagel (d)
Auteur : M. D’Olieslaeger (a)
Auteur : L. De Schepper (a)

Adresses :
(a) : Limburgs Universitair Centrum, Institute for Materials Research, B-3590 Diepenbeek, Belgium;
(b) : DaimlerChrysler AG, Research and Technology, Goldsteinstr. 235, D-60528 Frankfurt/Main, Germany
(c) : present Address: Alcatel, Stuttgart, Germany
(d) : Technical University of Darmstadt, Institute for High-Frequency Technics, D-64397 Darmstadt, Germany

Vers : Bibliographie
Source : ESREF'2000 - 11th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis.
Date : 2-6 octobre 2000
Site : http://www.elsevier.com/locate/microrel
Lien : private/MANCA.pdf - 6 pages, 441 Ko.
Pages : 1679 - 1682
Switches : power MOSFET
Puissance : 60V - 60A
Logiciel : FAILURE
Info : delta T de -40°C à 200°C, sur 40 échantillons.

Abstract :
Gate oxide reliability and thermal shock resistance of power MOSFETs for high temperature
applications, have been investigated by accelerated tests and several analytical and electrical techniques.
Thermal shock tests have been performed between -40°C and 200°C with subsequent electrical tests and failure
analysis. Time Dependent Dielectric Breakdown (TDDB) of the gate oxide has been studied in detail by means
of in-situ leakage current measurements at various voltages and temperatures. A statistical analysis of the
results yields information on the underlying failure time distribution, failure mechanisms and lifetime.

Bibliographie

Références : 8
[1] : W. Wondrak, Passive Components : Requirements by Automotive Applications, CARTS-Europe 1998, pp. 77-80.
[2] : R. Moazzami, J.C. Lee and C. Hu, Temperature Acceleration of Time Dependent Dielectric Breakdown, IEEE-ED 36(11), 2462-2465 (1989)
[3] : J.S. Suehle, P. Chaprala, C. Messick, W.M. Miller, K.C. Boyko, Field and Temperature Acceleration of Time-Dependent Dielectric Breakdown in intrinsic thin SiO2, Proc. IRPS 1994, pp. 120-125.
[4] : K. Croes, J.V. Manca, W. De Ceuninck, L. De Schepper, and G. Molenberghs, The time of ’guessing’ your failure time distribution is over, Microelectr. and Reliability 38 (1998), 1187-1191.
[5] : Chen, C.Y. Wu, M.K. Lee and C.N. Chen, The dielectric reliability of intrinsic SiO2 films thermally grown on a heavily doped Si substrate -characterisation and modelling, IEEE Transactions on Electron Devices, Vol. 34 (1987), pp. 1540-1552.
[6] : Bain, Statistical analysis of reliability and lifetesting models : theory and methods, Marcel Dekker Inc., New York, 1978.
[7] : FAILURE, Software package for reliability data analysis distributed by DESTIN NV, Wetenschapspark 1, B-3590 Diepenbeek, Belgium.
[8] : R. Degraeve, B. Kaczer and G. Groeseneken, Degradation and breakdown of thin oxide layers : mechanisms, models and reliability prediction, Microelectronics and Reliability 39 (1999) 1445-1460.

  [1] :  [PAP158]  -------
  [2] :  [PAP158]  -------
  [3] :  [PAP158]  -------
  [4] :  [PAP396]  K. CROES, J. V. MANCA, W. DE CEUNINCK, L. DE SCHEPPER, G. MOLENBERGHS, The time of guessing your failure time distribution is over!, Microelectronics Reliability, Volume 38, Issues 6-8, 8 June 1998, pp. 1187-1191.
  [5] :  [PAP158]  -------
  [6] : [LIVRE288] BAIN, Statistical analysis of reliability and lifetesting models : theory and methods, Marcel Dekker Inc., New York, 1978.
  [7] :  [DIV338]  FAILURE, Software package for reliability data analysis, distributed by DESTIN NV, Wetenschapspark 1, B-3590 Diepenbeek, Belgium.
  [8] :  [ART187]  R. DEGRAEVE, B. KACZER, G. GROESENEKEN, Degradation and breakdown of thin oxide layers : mechanisms, models and reliability prediction, Microelectronics and Reliability, No. 39, 1999, pp. 1445-1460.

Mise à jour le lundi 10 avril 2023 à 18 h 54 - E-mail : thierry.lequeu@gmail.com
Cette page a été produite par le programme TXT2HTM.EXE, version 10.7.3 du 27 décembre 2018.

Les informations contenues dans cette page sont à usage strict de Thierry LEQUEU et ne doivent être utilisées ou copiées par un tiers.
Powered by www.google.fr, www.e-kart.fr, l'atelier d'Aurélie - Coiffure mixte et barbier, La Boutique Kit Elec Shop and www.lequeu.fr.