J.H. CHUN, B.H. LEE, D.S. BYEON, D.Y. KIM, M.K. HAN, Y.I. CHOI, "An insulated gate bipolar transistor employing the plugged n+ anode", Microelectronics and Reliability, Vol. 39, No. 1, Jan. 1999, pp. 29-33.

J.H. CHUN, B.H. LEE, D.S. BYEON, D.Y. KIM, M.K. HAN, Y.I. CHOI, "An insulated gate bipolar transistor employing the plugged n+ anode", Microelectronics and Reliability, Vol. 39, No. 1, Jan. 1999, pp. 29-33. Copyright - [Précédente] [Première page] [Suivante] - Home

Article : [PAP311]

Titre : J.H. CHUN, B.H. LEE, D.S. BYEON, D.Y. KIM, M.K. HAN, Y.I. CHOI, An insulated gate bipolar transistor employing the plugged n+ anode, Microelectronics and Reliability, Vol. 39, No. 1, Jan. 1999, pp. 29-33.

Cité dans :[REVUE233] Elsevier Science, Microelectronics Reliability, Volume 39, Issue 1, Pages 1-149, January 1999.

Auteur : J.H. Chun - (a)
Auteur : B.H. Lee - (a)
Auteur : D.S. Byeon - (a)
Auteur : D.Y. Kim - (a)
Auteur : M.K. Han - (a)
Auteur : Y.I. Choi - (b)

(a) : School of Electrical Eng., Seoul National University, Shinlim-Dong Kwanak-Ku, Seoul 151-742, Korea.
(b) : School of Electronics Eng., Ajou University, Wonchun-Dong, Suwon 442-749, Korea.
Source : Microelectronics and Reliability
Volume : 39
Issue : 1
Date : Jan. 1999
Pages : 29 - 33
Stockage : Thierry LEQUEU
Lien : private/CHUN1.pdf - 258 Ko, 5 pages.

Abstract :
A vertical Insulated Gate Bipolar Transistor, entitled CB-IGBT(Carrier-inducing Barrier-controlled IGBT) has
been proposed and veri®ed by a two-dimensional numerical simulation. The structure of the proposed device is
almost identical with that of the conventional IGBT, except for the anode structure in which the p-barrier region
and n+ anode region are employed. In the CB-IGBT, the potential barrier height at the junction between the p-
barrier region and n-drift region is controlled by the amount of carriers, so that the trade-off relation between the
on-state voltage drop and the switching speed is decoupled efficiently. The switching speed of CB-IGBT is so much
enhanced with a negligible increase of the on-state voltage drop, since electrons stored in the n-drift region can be
extracted rapidly into the n+ anode via p-barrier region during turn-on process.

Bibliographie

References : 6
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[2] : Jayant Baliga B et al. IEEE Tran on Electron Devices 1984;ED-31:821-8.
[3] : Gough PA, Simpson MR, Rumennik V. IEDM Tech Dig 1986; 218-21.
[4] : Jayant Baliga B. IEEE Tran on Electron Devices 1984;ED-31(12):1790-5.
[5] : Dettmer H, Fichtner W, Bauer F, Stockmeier Thomas. Int Symp Power Semiconduct Dev ICs 1995; 492-6.
[6] : Simpson MR. IEEE Tran on Electron Dev 1991;38(7):1633-40.

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